Storage device programming methods, systems and media are described. A method may include encoding data to generate an encoded set of data. A first programming operation may write the encoded set of data to a memory device. The method includes encoding, using a second encoding operation based on the data, to generate a second set of encoded data. The second set of encoded data is stored to a cache. A first decoding operation is performed, based on the second set of encoded data and the encoded set of data, to generate a decoded set of data. A second decoding operation is performed to generate a second decoded set of data. The second decoded set of data is encoded to generate a third set of encoded data. The method includes performing a second programming operation to write the third set of encoded data to the memory device.

A test circuit includes a comparator and a comparison control circuit. The comparator is configured to compare a first input signal with a second input signal to generate a comparison result signal. The comparison control circuit is configured to perform at least one of an operation for latching the comparison result signal as reference data and an operation for outputting the comparison result signal as a first output signal. The comparison control circuit is configured to provide expectation data as the first input signal and read data as the second input signal in accordance with the reference data.

Several embodiments of memory devices and systems having a variable logical memory capacity are disclosed herein. In one embodiment, a memory device can include a plurality of memory regions that collectively define a physical memory capacity and a controller operably coupled to the plurality of memory regions. The controller is configured to advertise a first logical memory capacity to a host device, determine that at least one of the memory regions is at or near end of life, and in response to the determination—send a notification to the host device that a logical memory capacity of the memory device will be reduced and then retire the at least one of the memory regions.

A determination is made by a processing device included in a memory component that an operation to program data to a location in the memory component has failed, the data is programmed to a different location in the memory component by the processing device upon determining the operation has failed, and a notification that the data has been programmed to the different location in the memory component is provided by the processing device to a processing device operatively coupled to the memory component.

A memory system and a data processing system including the memory system may manage a plurality of memory devices. For example, the data processing system may categorize and analyze error information from the memory devices, acquire characteristic data from the memory devices and set operation modes of the memory devices based on the characteristic data, allocate the memory devices to a host workload, detect a defective memory device among the memory devices and efficiently recover the defective memory device.

Apparatuses, systems, and methods for self-test mode abort circuit. Memory devices may enter a self-test mode and perform testing operations on the memory array. During the self-test mode, the memory device may ignore external communications. The memory includes an abort circuit which may terminate the self-test mode if it fails to properly finish. For example, the abort circuit may count an amount of time since the self-test mode began and end the self-test mode if that amount of time meets or exceeds a threshold, which may be based off of the expected amount of time for the testing operations to complete.

A method includes receiving, by a memory sub-system, host data to be written to a plurality of blocks of a memory device associated with a memory sub-system, where each of the plurality of blocks are coupled to one of a plurality of word lines of the memory device. The method can further include generating parity data for each word line of the block; dividing the parity data into one of either a first word line parity set or a second word line parity set; generating a reduced parity data set with exclusive or parity values for the first word line parity set and for the second word line parity set; and writing the reduced parity data set in the memory sub-system.

A device may include a first die having a first circuit and a second die having a second circuit. The die may be separated by a material layer. The material layer may include multiple through-silicon vias (TSVs) for electrically coupling the first die to the second die. A first TSV of the TSVs may electrically couple the first circuit to the second circuit and a second TSV of the TSVs may include a redundant TSV that electrically bypasses the first TSV to couple the first circuit to the second circuit if a fault is detected in the first TSV.

Various implementations described herein are directed to a device having memory architecture with an array of memory cells arranged in multiple columns with redundancy including first columns of memory cells disposed in a first region along with second columns of memory cells and redundancy columns of memory cells disposed in a second region that is laterally opposite the first region. The device may have column shifting logic that is configured to receive data from the multiple columns, shift the data from the first columns in the first region to a first set of the redundancy columns in the second region, and shift data from the second columns in the second region to a second set of the redundancy columns in the second region.

A method for repairing a memory device with faulty memory cells. The method includes defining a RA environment comprising a location of each of the faulty memory cells and a plurality of SR and a plurality of SC. The method further includes repairing the faulty memory cells based on an RA training process using the defined RA environment and mapping of the location of each faulty memory cell with the plurality of SC or SR. The method further includes training, based on a determination that indicates the at least one faulty memory cell among the faulty memory cells is left unrepaired and the at least one SC or SR is remaining, a first NN to perform an action for repairing of the faulty memory cells such that a maximum number of faulty memory cells are reparable and a minimum number of SC and SR are utilized during the repairing.