Apparatuses, systems, and methods for refresh address masking. A memory device may refresh word lines as part of refresh operation by cycling through the word lines in a sequence. However, it may be desirable to avoid activating certain word lines (e.g., because they are defective). Refresh masking logic for each bank may include a fuse latch which stores a selected address associated with a word line to avoid. When a refresh address is generated it may be compared to the selected address. If there is a match, a refresh stop signal may be activated, which may prevent refreshing of the word line(s).

The present application provides a memory test circuit and a device wafer including the memory test circuit. The memory test circuit is coupled to a memory array having intersecting first and second signal lines, and includes a fuse element and a transistor. The fuse element has a first terminal coupled to a first group of the first signal lines and a test voltage, and has a second terminal coupled to second and third groups of the first signal lines. The transistor has a source/drain terminal coupled to the second terminal of the fuse element and another source/drain terminal coupled to a reference voltage. The first group of the first signal lines are selectively coupled to the test voltage when the transistor is turned on, and all of the first signal lines are coupled to the test voltage when the transistor is kept off.

A memory system for storing data is disclosed, the memory system including a plurality of memory devices configured to store data, each memory device having a plurality of bits, the memory devices configured and associated to work together as a rank to respond to a request; a memory control circuit associated with the plurality of memory devices and configured to output command and control signals to the plurality of memory devices; a detector for detecting a bit error in an operation; and a controller for remapping the bit error to a spare bit lane in response to the detector detecting the bit error.

A semiconductor apparatus may include a repair circuit configured to activate a redundant line of a cell array region by comparing repair information and address information. The semiconductor apparatus may include a main decoder configured to perform a normal access to the cell array region by decoding the address information. The address information may include both column information and row information.

A semiconductor memory device includes: a memory cell region including a plurality of cell mats in each of which a plurality of rows are disposed, each row coupled to normal cells and row-hammer cells; a repair control circuit suitable for generating a pairing flag denoting whether a cell mat in which an active row corresponding to an active address is disposed, is repaired with another cell mat; and a refresh control circuit suitable for: selecting, when an active command is inputted, a sampling address based on first and second data read from the row-hammer cells of the active row, refreshing, when a target refresh command is inputted, one or more adjacent rows to a target row corresponding to the sampling address, and selectively refreshing, when the target refresh command is inputted, one or more adjacent rows to a paired row of the target row according to the pairing flag.

A multi-channel memory device includes N first memory blocks, a first redundancy memory block, and N first interface circuits. Each of the first interface circuits is coupled to two of the first memory blocks and the first redundancy memory block. The first interface circuits respectively select N first selected memory blocks in the first memory block and the first redundancy memory block according to a plurality of first selection signals, where N is a positive integer greater than 1.

Disclosed in some examples are NAND devices, firmware, systems, methods, and devices that apply smart algorithms to process ECC errors by taking advantage of excess overprovisioning. In some examples, when the amount of overprovisioned blocks are above a predetermined threshold, a first ECC block error handling mode may be implemented and when the overprovisioned blocks are equal or less than the predetermined threshold, a second mode of ECC block error handling may be utilized.

Methods, apparatuses and systems related to managing repair assets are described. An apparatus stores a repair segment locator and a repair address for each defect repair. The apparatus may be configured to selectively apply a repair asset to one of multiple sections according to the repair segment locator.

Disclosed herein is an apparatus that includes a plurality of column planes each including a plurality of bit lines, an access control circuit configured to select one of the plurality of bit lines in each of the plurality of column planes based on a column address to read a plurality of data-bits, a data generating circuit configured to generate an expected-bit based at least in part on the data-bits, and an analyzing circuit configured to generate a fail-bit data indicating which one of the data-bits does not match the expected-bit when one of the data-bits does not match the expected-bit.

A memory system may include: a nonvolatile memory device comprising a plurality of memory blocks, each block having a plurality of pages, each page having a plurality of memory cells, wherein the plurality of memory block includes an SLC (Single Level Cell) block and an MLC (Multi-Level Cell) block; and a controller suitable for programming input data transmitted from a host to both the SLC block and the MLC block in response to a first program command, and invalidating the input data programmed in the SLC block at a time point when the program operation for the MLC block is completed, when the memory system is powered on after an SPO (Sudden Power-Off) occurred while the program operation was performed on both the SLC block and the MLC block, the controller may perform a recovery operation to the MLC block based on valid data programmed in the SLC block.