In order to provide a neutron therapy apparatus which give multi angles neutron beam irradiation, the neutron therapy apparatus includes: a beam shaping assembly including a moderator and a reflector surrounding the moderator, wherein the moderator moderates neutrons to a predetermined energy spectrum and the reflector guides deflected neutrons back to enhance the neutron intensity in the predetermined energy spectrum; a neutron generator embedded inside the beam shaping assembly, wherein the neutron generator generates neutrons after irradiated by an ion beam; at least a tube for transmitting the ion beam to the neutron generator, wherein the tube defines at least an axis; deflection magnets for changing the transmission direction of the ion beam; a collimator for concentrating neutrons; and an irradiation room for receiving a irradiated object, wherein the beam shaping assembly rotates around the axis of the tube.

In order to provide a neutron therapy apparatus which give multi angles neutron beam irradiation, the neutron therapy apparatus includes: a beam shaping assembly including a moderator and a reflector surrounding the moderator, wherein the moderator moderates neutrons to a predetermined energy spectrum and the reflector guides deflected neutrons back to enhance the neutron intensity in the predetermined energy spectrum; a neutron generator embedded inside the beam shaping assembly, wherein the neutron generator generates neutrons after irradiated by an ion beam; at least a tube for transmitting the ion beam to the neutron generator, wherein the tube defines at least an axis; deflection magnets for changing the transmission direction of the ion beam; a collimator for concentrating neutrons; and an irradiation room for receiving a irradiated object, wherein the beam shaping assembly rotates around the axis of the tube.

A target is for generating X-ray radiation by way of loading with a particle stream containing charged particles. In an embodiment, the target includes a layer structure including at least two metallic layers. A target surface, loadable by the particle stream, is formed by a first layer of the at least two metallic layers of the layer structure including a material including a first metallic element. A second layer of the at least two metallic layers of the layer structure includes a material including a second metallic element. Finally, an ordinal number of the first metallic element is less than an ordinal number of the second metallic element.

Presented systems and methods facilitate efficient and effective generation and delivery of radiation. A radiation generation system can comprise: a particle beam gun, a high energy dissipation anode target (HEDAT); and a liquid anode control component. In some embodiments, the particle beam gun generates an electron beam. The HEDAT includes a solid anode portion (HEDAT-SAP) and a liquid anode portion (HEDAT-LAP) that are configured to receive the electron beam, absorb energy from the electron beam, generate a radiation beam, and dissipate heat. The radiation beam can include photons that can have radiation characteristics (e.g., X-ray wavelength, ionizing capability, etc.). The liquid anode control component can control a liquid anode flow to the HEDAT. The HEDAT-SAP and HEDAT-LAP can cooperatively operate in radiation generation and their configuration can be selected based upon contribution of respective HEDAT-SAP and the HEDAT-LAP characteristics to radiation generation.

The test elements are provided that are adapted to detect at least one analyte in a sample. At least some of the test elements are provided with a defect marking which contains information about defectiveness of the test elements. The test elements include at least one radiation-sensitive material. The test elements are exposed to at least one radiation, the radiation being adapted to induce marking in the form of at least one optically detectable change in the radiation-sensitive material.

The test elements are provided that are adapted to detect at least one analyte in a sample. At least some of the test elements are provided with a defect marking which contains information about defectiveness of the test elements. The test elements include at least one radiation-sensitive material. The test elements are exposed to at least one radiation, the radiation being adapted to induce marking in the form of at least one optically detectable change in the radiation-sensitive material.

Biomass (e.g., plant biomass, animal biomass, and municipal waste biomass) is processed to produce useful products, such as fuels. For example, systems can use feedstock materials, such as cellulosic and/or lignocellulosic materials and/or starchy or sugary materials, to produce ethanol and/or butanol, e.g., by fermentation.

Biomass (e.g., plant biomass, animal biomass, and municipal waste biomass) is processed to produce useful products, such as fuels. For example, systems can use feedstock materials, such as cellulosic and/or lignocellulosic materials and/or starchy or sugary materials, to produce ethanol and/or butanol, e.g., by fermentation.

A method for overlay monitoring and control is introduced in the present disclosure. The method includes selecting a group of patterned wafers from a lot using a wafer selection model; selecting a group of fields for each of the selected group of patterned wafers using a field selection model; selecting at least one point in each of the selected group of fields using a point selection model; measuring overlay errors of the selected at least one point on a selected wafer; forming an overlay correction map using the measured overlay errors on the selected wafer; and generating a combined overlay correction map using the overlay correction map of each selected wafer in the lot.

A method for overlay monitoring and control is introduced in the present disclosure. The method includes selecting a group of patterned wafers from a lot using a wafer selection model; selecting a group of fields for each of the selected group of patterned wafers using a field selection model; selecting at least one point in each of the selected group of fields using a point selection model; measuring overlay errors of the selected at least one point on a selected wafer; forming an overlay correction map using the measured overlay errors on the selected wafer; and generating a combined overlay correction map using the overlay correction map of each selected wafer in the lot.