A semiconductor structure and a manufacturing method thereof are provided. The method includes following operations. A substrate including active regions and isolation regions is provided. First trench structures are formed on the substrate, the first trench structure passing through the active region and the isolation region. Bit line contact structures are formed in the first trench structures. Bit line structures are formed on the bit line contact structures, at least part of the bit line structure being positioned in the first trench structure. Bit line protection structures are formed on the bit line structures, the bit line protection structure at least covering an upper surface of the bit line structure. Capacitor contact assemblies are formed, the capacitor contact assembly including a first capacitor contact structure and a second capacitor contact structure which covers an upper surface and part of a side wall of the first capacitor contact structure.

A semiconductor device includes a first conductive layer extending along a first direction, a semiconductor layer extending along a second direction crossing the first direction, penetrating the first conductive layer, and including an oxide semiconductor, a first insulating layer between the first conductive layer and the semiconductor layer, a second conductive layer provided on one side of the semiconductor layer in the second direction and electrically connected thereto, a third conductive layer provided on the other side of the semiconductor layer in the second direction and electrically connected thereto, an electric conductor extending from the third conductive layer toward the second conductive layer along the semiconductor layer, and a charge storage film between the semiconductor layer and the electric conductor.

A method of manufacturing a semiconductor device includes sequentially stacking a mold layer and a supporter layer on a substrate, forming a plurality of capacitor holes passing through the mold layer and supporter layer, forming a plurality of lower electrodes filling the capacitor holes, forming a supporter mask pattern having a plurality of mask holes on the supporter layer and the lower electrodes, and forming a plurality of supporter holes by patterning the supporter layer. Each of the plurality of lower electrodes has a pillar shape, and each of the mask holes is between four adjacent lower electrodes and has a circular shape.

A compound superconducting wire 10 includes a reinforcement portion 12 and a compound superconductor 11. In the reinforcement portion 12, an assembly of plural reinforcement elements 4 are disposed. The reinforcement elements 4 each include plural reinforcement filaments 1 disposed in a stabilizer 2, and a stabilizing layer 3 at the outer periphery thereof. The reinforcement filaments 1 each mainly contain one or more metals selected from the group consisting of Nb, Ta, V, W, Mo, Fe, and Hf, an alloy consisting of two or more metals selected from the aforementioned group, or an alloy consisting of copper and one or more metals selected from the aforementioned group.

An oxide superconductor wire includes: a tape-shaped oxide superconductor laminate that is formed by providing an intermediate layer on a front surface side of a metal tape-shaped substrate, providing an oxide superconductor layer on the intermediate layer, and providing a protective layer on the oxide superconductor layer; and a coating member that includes a metal tape and a low melting point metal layer, in which the metal tape has a wider width than that of the oxide superconductor laminate and covers the protective layer surface of the oxide superconductor laminate, both side surfaces of the oxide superconductor laminate, and both end portions of a substrate back surface side in a width direction thereof, and both end portions of the metal tape in a width direction thereof are provided to cover both the end portions of the substrate back surface.

A wire connection device includes: a holding base which is provided with a wire accommodation groove having a width, the wire accommodation groove being configured to accommodate a plurality of wires; a pressing plate which is positioned above the holding base; a heating body which is positioned above the pressing plate and includes a heating member; a first driver which drives the holding base and the pressing plate away from or toward one another; and a second driver which drives the holding base and the heating body toward or away from one another, in which the pressing plate which is driven toward the holding base by the first driver presses together the plurality of wires accommodated in the wire accommodation groove with solder interposed therebetween.

A wire connection device includes: a holding base which is provided with a wire accommodation groove having a width, the wire accommodation groove being configured to accommodate a plurality of wires; a pressing plate which is positioned above the holding base; a heating body which is positioned above the pressing plate and includes a heating member; a first driver which drives the holding base and the pressing plate away from or toward one another; and a second driver which drives the holding base and the heating body toward or away from one another, in which the pressing plate which is driven toward the holding base by the first driver presses together the plurality of wires accommodated in the wire accommodation groove with solder interposed therebetween.

A termination unit for a superconductor network. Including a primary system that includes a first superconductor cable. Also a first superconducting coil and a first auxiliary magnetizing coil, each coil wound around the first superconductor cable. Also a terminal including a first leg, the first leg including an aperture configured to receive the first superconductor cable. The first leg defining a clearance about the first superconductor cable at ambient temperature and arranged to firmly clamp onto the first superconductor cable at a cryogenic temperature. The termination unit including a cooling system arranged to enclose and cool the primary system to cryogenic temperatures.

A cooling system includes a first section of high temperature superconducting (HTS) cable configured to receive a first flow of coolant and to permit the first flow of coolant to flow therethrough. The system may further include a second section of high temperature superconducting (HTS) cable configured to receive a second flow of coolant and to permit the second flow of coolant to flow therethrough. The system may further include a cable joint configured to couple the first section of HTS cable and the second section of HTS cable. The cable joint may be in fluid communication with at least one refrigeration module and may include at least one conduit configured to permit a third flow of coolant between said cable joint and said at least one refrigeration module through a coolant line separate from said first and second sections of HTS cable. Other embodiments and implementations are also within the scope of the present disclosure.

A method for cooling high temperature superconducting (HTS) cable comprising receiving a first flow of coolant at a first section of HTS cable and permitting the first flow of coolant to flow therethrough. The method also includes receiving a second flow of coolant at a second section of HTS cable and permitting the second flow of coolant to flow therethrough. The first section of HTS cable and said second section of HTS cable are coupled via a cable joint, the cable joint electrically connecting the first and second sections of HTS cable. The cable joint is in fluid communication with at least one refrigeration module. The cable joint includes at least one conduit configured to permit a third flow of coolant between the cable joint and the at least one refrigeration module through a coolant line separate from the first and second sections of HTS cable.