A system includes a cable passing from a first plate to a second plate via an intermediate plate, an attachment coupling the cable to the intermediate plate, and a conductive cladding connected to an outer surface of the cable and extended a first length from the attachment toward the second plate. The total length of the thermally conductive cladding is larger than the total length of the attachment, and the cable is thermally connected to the first plate, the second plate, and the intermediate plate.

According to one embodiment, a semiconductor device includes a first conductive layer between first and second insulating layers with an oxide semiconductor column extending in the first direction through these layers. A third insulating layer covers the column. The column has a first semiconductor portion at a first position matching the first insulating layer, a second semiconductor portion at a second position matching second insulating layer, and a third semiconductor portion at a third position matching the first conductive layer. The first semiconductor portion is continuous along a second direction between the third insulating layer, the second semiconductor portion is continuous along the second direction between the third insulating layer, but the third semiconductor portion is not continuous between the third insulating layer.

A hybrid cable generally comprising a superconducting material and a material consisting at least partially of a conventional conductor. In operation, the hybrid cable is chilled to superconducting temperatures, wherein current primarily passes through the superconducting material. If the superconducting material loses performance, e.g., is quenched, current will flow primarily through the chilled conventional conductor. In the event hybrid cable temperature further increases, the current will travel through the conventional conductor at its normal capacity.

Superconductive diamagnetic compounds with CuS channel and a modified apatite structure, or other structures, at and above 0 C. and ambient pressure are described, along with methods for their synthesis and use. The compounds are characterized by an X-ray diffraction peak from CuS planes. The diamagnetic compounds can have a molecular formula Pb.sub.10-xCu.sub.x[P (O.sub.1-yS.sub.y).sub.4].sub.6O.sub.1-zS.sub.z(PCPOSOS), where 2.5x10,0<y1, and 0<z1.

This invention relates to a semiconductor structure and a fabrication method therefor. The method for fabricating a semiconductor structure includes: providing a substrate, where a shallow trench isolation structure is formed on the substrate; forming a plurality of transistor accommodating grooves in the active regions, where there is a spacing between the transistor accommodating groove and the shallow trench isolation structure; forming a columnar structure in the transistor accommodating groove, where the columnar structure includes a source, a conductive channel, and a drain that are sequentially disposed in a direction away from the substrate; etching the active region located within the spacing and the active region located between adjacent columnar structures in the same active region to form a bit line trench, where the bit line trench surrounds the source; and forming a bit line that surrounds and connects the source in the bit line trench.