Patent classifications
H01C7/00
Physically unclonable all-printed carbon nanotube network
An all-printed physically unclonable function based on a single-walled carbon nanotube network. The network may be a mixture of semiconducting and metallic nanotubes randomly tangled with each other through the printing process. The unique distribution of carbon nanotubes in a network can be used for authentication, and this feature can be a secret key for a high level hardware security. The carbon nanotube network does not require any advanced purification process, alignment of nanotubes, high-resolution lithography and patterning. Rather, the intrinsic randomness of carbon nanotubes is leveraged to provide the unclonable aspect.
ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF
An electronic component includes external electrodes formed on an external surface of a body to be electrically connected to internal electrodes, and containing metal particles and glass, wherein the metal particles include particles having a polyhedral shape.
Monolithic Ceramic Component and Production Method
A film stack made from compacted green films and capable of being sintered to form a ceramic component with monolithic multi-layer structure is disclosed. The film stack includes a functional layer comprising a green film comprising a functional ceramic and a tension layer comprising a green film comprising a dielectric material. The tension layer is directly adjacent to the functional layer in the multi-layer structure. The multilayer structure also includes a first metallization plane and second metallization plane. The functional layer is between the first metallization plane and the second metallization plane.
PHYSICALLY UNCLONABLE ALL-PRINTED CARBON NANOTUBE NETWORK
An all-printed physically unclonable function based on a single-walled carbon nanotube network. The network may be a mixture of semiconducting and metallic nanotubes randomly tangled with each other through the printing process. The unique distribution of carbon nanotubes in a network can be used for authentication, and this feature can be a secret key for a high level hardware security. The carbon nanotube network does not require any advanced purification process, alignment of nanotubes, high-resolution lithography and patterning. Rather, the intrinsic randomness of carbon nanotubes is leveraged to provide the unclonable aspect.
COMPOSITE ELECTRONIC COMPONENT
A composite electronic component includes: a body part including a dielectric portion; first and second external electrodes disposed on outer surfaces of the body part; a plurality of first and second electrodes disposed inside of the dielectric portion, and electrically connected to the first and second external electrodes, respectively; third and fourth electrodes disposed on an upper portion of the dielectric portion, and electrically connected to the first and second external electrodes, respectively; a gap provided between the third and fourth electrodes; a groove disposed below the gap; and an electrostatic discharge (ESD) layer disposed in the gap.
TEMPERATURE SENSOR
A temperature sensor includes: a thermistor; a pair of lead-out wires each having a front end connected to the thermistor; a glass body for sealing the thermistor and the front ends of the lead-out wires; a pair of leadwires each having a front end connected to the rear end of each of the pair of lead-out wires; and a synthetic resin covering layer for covering the glass body, the pair of lead-out wires excepting the front end portions, and the front end portions of the pair of lead wires. The covering layer shaped as a tube is arranged by: elastically expanding a laminate of a tubular inner layer and a tubular outer layer so as to be fitted forcibly onto the glass body, the pair of lead-out wires excepting the front end portions, and the front end portions of the pair of lead wires; and applying heat to melt the inner layer and to shrink the outer layer. The peripheral surface of the glass body is brought into a direct contact with the outer layer without the inner layer interposed.
MAGNETIC FIELD DETECTION APPARATUS AND CURRENT DETECTION APPARATUS
A magnetic field detection apparatus includes a magnetoresistive effect element and a conductor. The magnetoresistive effect element includes a magnetoresistive effect film extending in a first axis direction and including a first end part, a second end part, and an intermediate part between the first and second end parts. The conductor includes a first part and a second part that each extend in a second axis direction inclined with respect to the first axis direction. The conductor is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect film in a third axis direction orthogonal to the second axis direction. The first part and the second part respectively overlap the first end part and the second end part in a fourth axis direction orthogonal to both of the second axis direction and the third axis direction.
MAGNETIC FIELD DETECTION APPARATUS AND CURRENT DETECTION APPARATUS
A magnetic field detection apparatus includes a magnetoresistive effect element and a conductor. The magnetoresistive effect element includes a magnetoresistive effect film extending in a first axis direction and including a first end part, a second end part, and an intermediate part between the first and second end parts. The conductor includes a first part and a second part that each extend in a second axis direction inclined with respect to the first axis direction. The conductor is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect film in a third axis direction orthogonal to the second axis direction. The first part and the second part respectively overlap the first end part and the second end part in a fourth axis direction orthogonal to both of the second axis direction and the third axis direction.
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
A method of manufacturing a semiconductor device is provided. The method includes depositing a first interconnect metal layer on a substrate; depositing a first barrier metal layer on the first interconnect metal layer; depositing a first dielectric layer on the first barrier metal layer; depositing a second barrier metal layer on the first dielectric layer; etching the second barrier metal layer to form a MIM capacitor region and a thin film resistor region; forming a hard mask on the second barrier metal layer and the first dielectric layer; forming an isolated interconnect pattern between the MIM capacitor region and the thin film resistor region; depositing an inter-metal dielectric layer on the hard mask; forming Via holes in the MIM capacitor region and the thin film resistor region, and filling the Via holes with metal to form a Via contact layer.
TEMPERATURE SENSOR AND HEATING STRUCTURE COMPRISING SAME
The present invention measures a temperature of a heating element and includes a first insulating layer having an electrical insulating function; a sensor electrode provided on an upper side of the first insulating layer and having a change in intensity of a current according to a change in heat generated by the heating element; and a second insulating layer covering an upper side of the sensor electrode, wherein the sensor electrode is disposed in parallel with the first insulating layer and having a plurality of bent portions from one end of the sensor electrode to the other end of the sensor electrode.