Provided is a shunt resistor with an enhanced strength and reduced electrical resistance between a resistive element and terminals of the shunt resistor. This shunt resistor includes a first terminal and a second terminal each made of an electrically conductive metal material; and a resistive element disposed between the first terminal and the second terminal. The first terminal and the second terminal each have a through-hole, and the resistive element is embedded in the through-holes of the first terminal and the second terminal in a depth direction thereof. Regions connecting the resistive element to the first terminal and the second terminal each have an alloy portion formed along an inner peripheral surface of the through-hole.

A resistor is composed of a resistor body part and a molded resin in which the resistor body part is embedded. The molded resin includes a base resin and a filler that is higher in thermal conductivity than the base resin.

A resistor is composed of a resistor body part and a molded resin in which the resistor body part is embedded. The molded resin includes a base resin and a filler that is higher in thermal conductivity than the base resin.

A resistor element includes a base substrate, a resistor layer disposed on one surface of the base substrate, a first electrode layer and a second electrode layer disposed on the resistor layer spaced apart from each other, a third electrode layer disposed between the first electrode layer and the second electrode layer to be spaced apart from the first electrode layer and the second electrode layer and being thicker than each of the first electrode layer and the second electrode layer, and first to third plating layers disposed on the first to third electrode layers, respectively.

The present invention relates to a shunt resistor and a method for manufacturing the shunt resistor. The present invention relates to a current detection device including a shunt resistor. The shunt resistor (1) comprises a resistance element (5) and a pair of electrodes (6, 7) connected to both ends (5a, 5b) of the resistance element (5) in a first direction. The shunt resistor (1) has a projecting portion (11) formed on a side surface (1a), which is parallel to the first direction, of the shunt resistor (1), and a recessed portion (12) formed in a side surface (1b), which is an opposite side of the side surface (1a), of the shunt resistor (1), and extending in the same direction as the projection (11). The projecting portion (11) has a portion of the resistance element (5) and portions of the pair of electrodes (6, 7), and the recessed portion (12) has a side surface (5d) of the resistance element (5) parallel to the first direction.

The present invention relates to a shunt resistor and a method for manufacturing the shunt resistor. The present invention relates to a current detection device including a shunt resistor. The shunt resistor (1) comprises a resistance element (5) and a pair of electrodes (6, 7) connected to both ends (5a, 5b) of the resistance element (5) in a first direction. The shunt resistor (1) has a projecting portion (11) formed on a side surface (1a), which is parallel to the first direction, of the shunt resistor (1), and a recessed portion (12) formed in a side surface (1b), which is an opposite side of the side surface (1a), of the shunt resistor (1), and extending in the same direction as the projection (11). The projecting portion (11) has a portion of the resistance element (5) and portions of the pair of electrodes (6, 7), and the recessed portion (12) has a side surface (5d) of the resistance element (5) parallel to the first direction.

An integrated circuit includes a thin film resistor body that is formed over a dielectric layer. An interfacial layer is formed on the thin film resistor body and resistor heads are formed on the interfacial layer. The thin film resistor body includes nickel chromium aluminum (NiCrAl) and the resistor heads include titanium tungsten (TiW).

An integrated circuit includes a thin film resistor body that is formed over a dielectric layer. An interfacial layer is formed on the thin film resistor body and resistor heads are formed on the interfacial layer. The thin film resistor body includes nickel chromium aluminum (NiCrAl) and the resistor heads include titanium tungsten (TiW).

To provide a chip resistor in which a resistive element can be surely protected from an external environment and which is also excellent in corrosion resistance, a chip resistor 1 is configured to include an insulating substrate 2, a pair of front electrode 3 provided on opposite end portions of a front surface of the insulating substrate 2, a pair of back electrodes 7 provided on opposite end portions of a back surface of the insulating substrate 2, a resistive element 4 provided to extend onto the two front electrodes 3, a first insulating layer 5 covering the resistive element 4, a second insulating layer 6 made of a resin material to cover the first insulating layer 5, end surface electrodes 8 establishing electrical continuity between the front electrodes 3 and the back electrodes 7, plating layers 9 covering the end surface electrodes 8, etc. Rough surface portions 6a made rougher in surface roughness than any other portion of the second insulating layer 6 are formed at opposite end portions of the second insulating layer 6. End portions of the end surface electrodes 8 and the plating layers 9 are brought into tight contact with the rough surface portions 6a respectively.

A thermistor chip is provided, which includes a thermosensitive ceramic substrate, a surface electrode and a bottom electrode. The surface electrode and the bottom electrode are respectively arranged on the two surfaces of the thermosensitive ceramic substrate. The surface electrode is a silver layer. The bottom electrode consists of a silver layer, a titanium-tungsten alloy layer, a copper layer and a gold layer, laminating on the thermosensitive ceramic substrate in turn from inside to outside. A preparation method thereof is also provided. The thermistor chip can meet the requirements of both solder paste reflow soldering and wire bonding process simultaneously, and has the advantages of good bonding effect and high temperature resistance, high reliability and high stability.