A foreign object detection device in the present disclosure includes: a set sensor coil; and a determination device that detects a foreign object, based on voltage of the set sensor coil. A first sensor coil group in the set sensor coil includes unit sensor coils wound in a first winding direction and unit sensor coils wound in a second winding direction opposite to the first winding direction, these coils wound in the respective directions being electrically connected in series. Each unit sensor coil includes a coil conductor prescribing its external shape. Coil conductors are continuously and electrically connected in series. A part or the whole of the coil conductor forming the unit sensor coil in the first winding direction is a part or the whole of the coil conductor forming the unit sensor coil in the second winding direction.

An inductor array chip includes a magnetic laminated body and a plurality of inductors. The magnetic laminated body includes a plurality of stacked magnetic layers. The plurality of inductors are arranged inside the magnetic laminated body. The inductance of a first inductor differs from the inductance of a second inductor. The inductors include a plurality of coil-shaped conductors and via-hole conductors. The plurality of coil-shaped conductors are arranged between the magnetic layers. The via-hole conductors electrically connect the plurality of coil-shaped conductors. The inductors include a plurality of inductors in which the section sizes of the coil-shaped conductors differ from one another.

An inductor array chip includes a magnetic laminated body and a plurality of inductors. The magnetic laminated body includes a plurality of stacked magnetic layers. The plurality of inductors are arranged inside the magnetic laminated body. The inductance of a first inductor differs from the inductance of a second inductor. The inductors include a plurality of coil-shaped conductors and via-hole conductors. The plurality of coil-shaped conductors are arranged between the magnetic layers. The via-hole conductors electrically connect the plurality of coil-shaped conductors. The inductors include a plurality of inductors in which the section sizes of the coil-shaped conductors differ from one another.

A laminated coil component that can use inexpensive copper as an internal conductor, and has excellent direct current superimposition characteristics is provided. In a laminated coil component including: a magnetic section including a ferrite material; a non-magnetic section including a non-magnetic ferrite material; and a coiled conductor section containing copper as a main component embedded inside the magnetic section and the non-magnetic section, the non-magnetic section contains at least Fe, Mn and Zn, and optionally Cu. The non-magnetic section has a Fe content of 40.0 mol % to 48.5 mol % in terms of Fe.sub.2O.sub.3, a Mn content of 0.5 mol % to 9 mol % in terms of Mn.sub.2O.sub.3 and a Cu content of 8 mol % or less in terms of CuO.

An integrated transformer includes a primary inductor and a secondary inductor wherein the primary inductor includes a B turns spiral winding formed by a first metal layer and an A turns winding formed by a second metal layer, wherein the A turns winding formed by the second metal layer and the innermost turns of the B turns spiral winding formed by the first metal layer are substantially overlapped; and the secondary inductor includes a C turns winding at least formed by the second metal layer, wherein the C turns winding formed by the second metal layer of the secondary inductor and a portion of the winding formed by the first metal layer of the primary inductor are substantially overlapped, wherein A is not bigger than B, and A is not bigger than C.

An integrated transformer includes a primary inductor and a secondary inductor wherein the primary inductor includes a B turns spiral winding formed by a first metal layer and an A turns winding formed by a second metal layer, wherein the A turns winding formed by the second metal layer and the innermost turns of the B turns spiral winding formed by the first metal layer are substantially overlapped; and the secondary inductor includes a C turns winding at least formed by the second metal layer, wherein the C turns winding formed by the second metal layer of the secondary inductor and a portion of the winding formed by the first metal layer of the primary inductor are substantially overlapped, wherein A is not bigger than B, and A is not bigger than C.

An inductor structure includes a first inductor and a second inductor. The second inductor includes a loop that surrounds the first inductor. The first inductor includes a first loop and a second loop, and a crossover section coupling the first loop to the second loop so as to cause current flowing through the first inductor to circulate around the first loop in a first rotational direction and around the second loop in a second rotational direction opposite to the first rotational direction; wherein the first and second inductors are arranged in an equilibrated configuration about a first axis that bisects the inductor structure such that the first loop is on one side of the first axis and the second loop is on a second side of the first axis, such that the magnetic interaction between the inductors due to current flow in the inductors is cancelled out.

Disclosed herein are a power inductor in which aspect ratios of the innermost pattern and the outermost pattern are similar with those of the intermediate pattern and a manufacturing method thereof. The power inductor includes coil patterns formed on one surface or both surfaces of a core insulating layer; insulating patterns bonded to at least one of an innermost pattern and an outermost pattern of the coil patterns; metal layers plated on surfaces of the coil patterns; and an insulator covering the coil patterns including the metal layers.

A reconfigurable multi-stack inductor formed within a semiconductor structure may include a first inductor structure located within a first metal layer of the semiconductor structure, a first ground shielding structure located within the first metal layer that is electrically isolated from and circumferentially bounds the first inductor structure, and a second inductor structure located within a second metal layer of the semiconductor structure, whereby the second inductor structure is electrically coupled to the first inductor structure. A second ground shielding structure located within the second metal layer is electrically isolated from and circumferentially bounds the second inductor structure, whereby the first and second inductor generate a first inductance value based on the first ground shielding structure and second ground shielding structure being coupled to ground, and the first and second inductor generate a second inductance value based on the first ground shielding structure and second ground shielding structure electrically floating.

Embodiments herein may relate to a package with a dielectric layer having a first face and a second face opposite the first face. A conductive line of a patterned metal redistribution layer (RDL) may be coupled with the second face of the dielectric layer. The line may include a first portion with a first width and a second portion directly coupled to the first portion, the second portion having a second width. The first portion may extend beyond a plane of the second face of the dielectric layer, and the second portion may be positioned between the first face and the second face of the dielectric layer. Other embodiments may be described and/or claimed.