The present disclosure provides a plasma electric propulsion device comprising a capacitive energy storage device as a power source for an engine configured to heat and/or ionize and/or accelerate a propellant due to action of an electric field and/or magnetic field. The energy storage device comprises: a first electrically conductive electrode, a second electrically conductive electrode; and at least one metadielectric layer located between the first and second conductive electrodes. The metadielectric layer comprises at least one organic compound with at least one electrically resistive substituent and at least one polarizable unit. The polarizable unit is selected from intramolecular and intermolecular polarizable units. The organic compound is selected from the list comprising compounds with rigid electro-polarizable organic units, composite organic polarizable compounds, composite electro-polarizable organic compounds, composite non-linear electro-polarizable compounds, Sharp polymers, Furuta co-polymers, para-Furuta polymers, YanLi polymers, and any combination thereof.

The present disclosure provides a plasma electric propulsion device comprising a capacitive energy storage device as a power source for an engine configured to heat and/or ionize and/or accelerate a propellant due to action of an electric field and/or magnetic field. The energy storage device comprises: a first electrically conductive electrode, a second electrically conductive electrode; and at least one metadielectric layer located between the first and second conductive electrodes. The metadielectric layer comprises at least one organic compound with at least one electrically resistive substituent and at least one polarizable unit. The polarizable unit is selected from intramolecular and intermolecular polarizable units. The organic compound is selected from the list comprising compounds with rigid electro-polarizable organic units, composite organic polarizable compounds, composite electro-polarizable organic compounds, composite non-linear electro-polarizable compounds, Sharp polymers, Furuta co-polymers, para-Furuta polymers, YanLi polymers, and any combination thereof.

A manufacturing method of a capacitor structure includes the following steps. A first capacitor is formed on a substrate. The first capacitor includes a first electrically conductive pattern and a second electrically conductive pattern of a first electrically conductive layer and a first dielectric layer disposed therebetween in a horizontal direction. A second capacitor is formed on the substrate before forming the first capacitor. The second capacitor includes a third electrically conductive pattern and a fourth electrically conductive pattern of a second electrically conductive layer and a second dielectric layer disposed therebetween in the horizontal direction. A thickness of the second electrically conductive layer is monitored. A target value of a thickness of the first electrically conductive layer is controlled in accordance with a value of a monitored thickness of the second electrically conductive layer.

The present disclosure provides advantageous composite films/coatings, and improved methods for fabricating such composite films/coatings. More particularly, the present disclosure provides improved methods for fabricating composite films by trapping at least a portion of a layered material (e.g., hexagonal boron nitride sheets/layers) at an interface of a phase separated system and then introducing the layered material to a polymer film. The present disclosure provides for the use of boron nitride layers to increase the properties (e.g., dielectric constant and breakdown voltage) of polymer films. The exemplary films can be produced by an advantageous climbing technique. Exemplary boron nitride films are composed of overlapping boron nitride sheets with a total thickness of about one nanometer, with the film then transferred onto a polymer film, thereby resulting in significant increases in both dielectric and breakdown properties of the polymer film.

A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.

A hybrid jumper cable includes: a pair of power conductors; a pair of optical fibers; a jacket surrounding the pair of power conductors and the pair of optical fibers; a hybrid connector connected with the pair of power conductors and the pair of optical fibers; a capacitor electrically connected to each of the pair of power conductors; and a conduit attached to the hybrid connector, the capacitor residing in the conduit.

A hybrid jumper cable includes: a pair of power conductors; a pair of optical fibers; a jacket surrounding the pair of power conductors and the pair of optical fibers; a hybrid connector connected with the pair of power conductors and the pair of optical fibers; a capacitor electrically connected to each of the pair of power conductors; and a conduit attached to the hybrid connector, the capacitor residing in the conduit.

A conductive powder for an internal electrode includes a metal particle; and a graphene layer or an oxidized graphene layer disposed on at least a portion of a surface of the metal particle.

A semiconductor device includes a substrate that includes a first region and a second region; a switching transistor on the first region of the substrate, an interlayer dielectric layer that covers the switching transistor and is on the second region of the substrate, a cell contact that penetrates the interlayer dielectric layer on the first region of the substrate and is in contact with the switching transistor, and a first dummy contact, a second dummy contact, and a third dummy contact that penetrate the interlayer dielectric layer on the second region of the substrate in a vertical direction and adjacent to each other in a first horizontal direction. The first and second dummy contacts constitute opposing electrodes of a first decoupling capacitor. The second and third dummy contacts constitute opposing electrodes of a second decoupling capacitor. The first to third dummy contacts are electrically isolated from the substrate.

An electronic component that includes a substrate having a first main surface and a second main surface, an element on the first main surface of the substrate, a first contact electrode electrically connected to the element, an insulating film defining a first opening at a position that has an overlap with the first contact electrode in the plan view of the first main surface, a protective film covering the insulating film in a region including at least a part of the periphery of the first opening, and a first external electrode electrically connected to the first contact electrode and extending over the protective film.