Provided is a doping system in which an active material in a strip-shaped electrode precursor having a layer including an active material is doped with alkali metal. The doping system includes a doping tank, a conveying unit, a counter electrode unit, a connection unit, and a porous insulating member. The doping tank accommodates a solution including alkali metal ions. The conveying unit conveys the electrode precursor along a path passing through the inside of the doping tank. The counter electrode unit is accommodated in the doping tank. The connection unit electrically connects the electrode precursor and the counter electrode unit. The porous insulating member is disposed between the electrode precursor and the counter electrode unit, and is not in contact with the electrode precursor.

The present invention relates to a ceramic capacitor and a manufacturing method therefor, the ceramic capacitor comprising: a ceramic body which is formed in a hexahedron shape, includes a plurality of dielectric layers and at least one pair of internal electrodes disposed to face each other with the dielectric layers therebetween, and includes two end surfaces through which the internal electrodes are exposed, a lower surface which is a mounting surface mounted on a substrate, an upper surface facing the lower surface, and a front surface and a rear surface connecting the upper surface and the lower surface together and facing each other; and external electrodes respectively disposed on the end surfaces of the ceramic body so as to be electrically connected to the internal electrodes, wherein the external electrodes include: a metal layer formed on the entire end surfaces of the ceramic body so as to be connected to the internal electrodes; and a conductive resin layer formed on both edges of the end surfaces of the ceramic body.

The present invention relates to a ceramic capacitor and a manufacturing method therefor, the ceramic capacitor comprising: a ceramic body which is formed in a hexahedron shape, includes a plurality of dielectric layers and at least one pair of internal electrodes disposed to face each other with the dielectric layers therebetween, and includes two end surfaces through which the internal electrodes are exposed, a lower surface which is a mounting surface mounted on a substrate, an upper surface facing the lower surface, and a front surface and a rear surface connecting the upper surface and the lower surface together and facing each other; and external electrodes respectively disposed on the end surfaces of the ceramic body so as to be electrically connected to the internal electrodes, wherein the external electrodes include: a metal layer formed on the entire end surfaces of the ceramic body so as to be connected to the internal electrodes; and a conductive resin layer formed on both edges of the end surfaces of the ceramic body.

A method for manufacturing a ceramic electronic component includes a ceramic chip element assembly production step of producing ceramic chip element assemblies, a jig preparation step of preparing a jig with chip storing portions including a bottom portion to support a ceramic chip element assembly from below and an open-top side wall portion, a ceramic chip element assembly storing step of storing the ceramic chip element assemblies in the chip storing portions in a one-to-one correspondence, a ceramic chip element assembly working step of working the ceramic chip element assemblies stored in the chip storing portions, and a ceramic chip element assembly removal step of removing the ceramic chip element assemblies from the chip storing portions.

A method for manufacturing a ceramic electronic component includes a ceramic chip element assembly production step of producing ceramic chip element assemblies, a jig preparation step of preparing a jig with chip storing portions including a bottom portion to support a ceramic chip element assembly from below and an open-top side wall portion, a ceramic chip element assembly storing step of storing the ceramic chip element assemblies in the chip storing portions in a one-to-one correspondence, a ceramic chip element assembly working step of working the ceramic chip element assemblies stored in the chip storing portions, and a ceramic chip element assembly removal step of removing the ceramic chip element assemblies from the chip storing portions.

At least part of a fabrication process of a secondary battery is automated. A highly reliable secondary battery is provided. The secondary battery is fabricated by placing a first electrode over a first exterior body; placing a separator over the first electrode; placing a second electrode over the separator; dripping an electrolyte on at least one of the first electrode, the separator, and the second electrode; impregnating the at least one of the first electrode, the separator, and the second electrode with the electrolyte; then placing a second exterior body over the first exterior body to cover the first electrode, the separator, and the second electrode; and sealing the first electrode, the separator, and the second electrode with the first exterior body and the second exterior body. The electrolyte is dripped from a position whose shortest distance from a surface where the electrolyte is dripped is greater than 0 mm and less than or equal to 1 mm.

A light harvesting supercapacitor and a method of preparing the light harvesting supercapacitor are disclosed. The light harvesting supercapacitor includes a transparent substrate, an active layer including TiO.sub.2 nanoparticles and polyaniline (PANI) nanoparticles disposed on the transparent substrate, an electrolyte layer including a solid separator and poly(2-acrylamido-2-methyl-1-propanesulfonic acid) disposed on the active layer, a carbon electrode disposed on the electrolyte layer; and a metal layer disposed on the activated carbon electrode. The method of preparing the light harvesting supercapacitor involves pulsed laser ablation in a liquid of bulk PANI to form the PANI nanoparticles. The light harvesting supercapacitor can be used in a photovoltaic device.

A light harvesting supercapacitor and a method of preparing the light harvesting supercapacitor are disclosed. The light harvesting supercapacitor includes a transparent substrate, an active layer including TiO.sub.2 nanoparticles and polyaniline (PANI) nanoparticles disposed on the transparent substrate, an electrolyte layer including a solid separator and poly(2-acrylamido-2-methyl-1-propanesulfonic acid) disposed on the active layer, a carbon electrode disposed on the electrolyte layer; and a metal layer disposed on the activated carbon electrode. The method of preparing the light harvesting supercapacitor involves pulsed laser ablation in a liquid of bulk PANI to form the PANI nanoparticles. The light harvesting supercapacitor can be used in a photovoltaic device.

In a metallized film 1, n electrode portions 20, which are metal deposition portions, are formed in parallel on one surface of a dielectric film 2 having a film width corresponding to n capacitor elements, n being an even number of 2 or more. Each electrode portion 20 is provided with a plurality of inclined margins 31 and 32, which are metal non-deposition portions extending at an angle with respect to a film width direction, at a regular interval in a film length direction. Across a center line Lc virtually extending in the film length direction at the center in the film width direction, the inclined margins 31 of the electrode portion 20 located on one side in the film width direction, and the inclined margins 32 of the electrode portion 20 located on the other side in the film width direction are inclined in opposite directions so as to be line-symmetric with respect to the center line Lc.

A film-forming device disclosed is a film-forming device for forming a film on a metal foil having a porous portion on a main surface thereof by a gas phase method, and includes a film-forming region in which the film is formed on the metal foil, conveyors to provided downstream of the film-forming region and drawing the metal foil from the film-forming region, and a control unit that controls the stress applied to the metal foil from the conveyors to 21 N/mm.sup.2 or less. This provides a film-forming device which does not cause defects easily on a film-forming target metal foil.