H01H49/00

PACKAGE-INTEGRATED BISTABLE SWITCH FOR ELECTROSTATIC DISCHARGE (ESD) PROTECTION

A switch in a package substrate of a microelectronic package is provided, the switch comprising: an actuator plate; a strike plate; and a connecting element mechanically coupling the actuator plate and the strike plate. The switch is configured to move within a cavity inside the package substrate between an open position and a closed position, a conductive material is coupled to the switch and to a ground via in the package substrate, and the conductive material is configured to move with the switch, such that the switch is conductively coupled to the ground via in the open position and the closed position.

Electromagnetic relay and a method of making the same

An electromagnetic relay includes a base, an electromagnet disposed on the base, an armature unit having a magnetically attractive member magnetically attractable by the electromagnet, a movable terminal unit mounted on the armature unit and including a first terminal member and a first contact, and a stationary terminal member mounted on the base. The first terminal member is a two-piece structure composed of a spring plate and a first leg. A ratio of the thickness of the first leg to the thickness of the spring plate ranges from 2 to 4. When the electromagnet is energized and de-energized, the first contact contacts and moves away from the second contact, respectively. A method of making the electromagnetic relay is also disclosed.

Electromagnetic relay and a method of making the same

An electromagnetic relay includes a base, an electromagnet disposed on the base, an armature unit having a magnetically attractive member magnetically attractable by the electromagnet, a movable terminal unit mounted on the armature unit and including a first terminal member and a first contact, and a stationary terminal member mounted on the base. The first terminal member is a two-piece structure composed of a spring plate and a first leg. A ratio of the thickness of the first leg to the thickness of the spring plate ranges from 2 to 4. When the electromagnet is energized and de-energized, the first contact contacts and moves away from the second contact, respectively. A method of making the electromagnetic relay is also disclosed.

MEMS Device Built On Substrate With Ruthenium Based Contact Surface Material
20210304973 · 2021-09-30 ·

A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

MEMS Device Built On Substrate With Ruthenium Based Contact Surface Material
20210304973 · 2021-09-30 ·

A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

Electromechanical Power Switch Integrated Circuits And Devices And Methods Thereof

An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

Electromechanical Power Switch Integrated Circuits And Devices And Methods Thereof

An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

MEMS DUAL SUBSTRATE SWITCH WITH MAGNETIC ACTUATION

Systems and methods for forming a magnetostatic MEMS switch include forming a movable beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. A shunt bar on the movable plate may close the switch when lowered onto the contacts. The switch may generally be closed, with the shunt bar resting on the contacts. However, a magnetically permeable material may also be inlaid into the movable plate. The switch may then be opened by placing either a permanent magnet or an electromagnet in proximity to the switch.

MEMS DUAL SUBSTRATE SWITCH WITH MAGNETIC ACTUATION

Systems and methods for forming a magnetostatic MEMS switch include forming a movable beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. A shunt bar on the movable plate may close the switch when lowered onto the contacts. The switch may generally be closed, with the shunt bar resting on the contacts. However, a magnetically permeable material may also be inlaid into the movable plate. The switch may then be opened by placing either a permanent magnet or an electromagnet in proximity to the switch.

PACKAGE-INTEGRATED BISTABLE SWITCH FOR ELECTROSTATIC DISCHARGE (ESD) PROTECTION

Embodiments may relate to a package substrate that includes a signal line and a ground line. The package substrate may further include a switch communicatively coupled with the ground line. The switch may have an open position where the switch is communicatively decoupled with the signal line, and a closed position where the switch is communicatively coupled with the signal line. Other embodiments may be described or claimed.