Embodiments may relate to a package substrate that includes a signal line and a ground line. The package substrate may further include a switch communicatively coupled with the ground line. The switch may have an open position where the switch is communicatively decoupled with the signal line, and a closed position where the switch is communicatively coupled with the signal line. Other embodiments may be described or claimed.

Magnetic orientation-independent magnetically actuated switches may be made by producing an outer cylinder and an actuator cylinder from ferromagnetic sheets and non-ferromagnetic sheets in alternating order. A first ferromagnetic body is attached to an end of the outer cylinder. The actuator cylinder is positioned within a first bore of the outer cylinder, the actuator pin is positioned within a second bore of the actuator cylinder and a third bore of the first ferromagnetic body with a portion of the actuator pin extending beyond the third bore of the first ferromagnetic body. A second ferromagnetic body is attached to the portion of the actuator pin, thus forming the magnetic orientation-independent magnetically operated switch.

Magnetic orientation-independent magnetically actuated switches may be made by producing an outer cylinder and an actuator cylinder from ferromagnetic sheets and non-ferromagnetic sheets in alternating order. A first ferromagnetic body is attached to an end of the outer cylinder. The actuator cylinder is positioned within a first bore of the outer cylinder, the actuator pin is positioned within a second bore of the actuator cylinder and a third bore of the first ferromagnetic body with a portion of the actuator pin extending beyond the third bore of the first ferromagnetic body. A second ferromagnetic body is attached to the portion of the actuator pin, thus forming the magnetic orientation-independent magnetically operated switch.

An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode, forming a second cantilevered electrode over an electrode and operable to contact the first cantilevered electrode upon an application of a voltage to the electrode, and forming an arm on the first cantilevered electrode with an extending protrusion extending upward from an upper surface of the arm.

An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode, forming a second cantilevered electrode over an electrode and operable to contact the first cantilevered electrode upon an application of a voltage to the electrode, and forming an arm on the first cantilevered electrode with an extending protrusion extending upward from an upper surface of the arm.

An armature for an electromagnetic actuator, the armature including an armature body, at least one electrically conductive member configured for cooperation with a magnetic field generator of an electromagnetic actuator, and a connection end configured for connection of the armature to an apparatus operable by an electromagnetic actuator. The armature body also having a cellular structure. The armature may form part of an electromagnetic actuator, which in turn may be a component in a switch device. The armature may be manufactured by an additive manufacturing process.

An armature for an electromagnetic actuator, the armature including an armature body, at least one electrically conductive member configured for cooperation with a magnetic field generator of an electromagnetic actuator, and a connection end configured for connection of the armature to an apparatus operable by an electromagnetic actuator. The armature body also having a cellular structure. The armature may form part of an electromagnetic actuator, which in turn may be a component in a switch device. The armature may be manufactured by an additive manufacturing process.

An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.10.1 m.sup.2.