A method of operating a substrate support includes arranging a substrate on an inner portion of the substrate support and calculating a desired pocket depth of the substrate support using data indicative of a relationship between the desired pocket depth and at least one process parameter. The desired pocket depth corresponds to a desired distance between an upper surface of an edge ring surrounding the inner portion and an upper surface of the substrate. The method further includes selectively controlling, based on the desired pocket depth as calculated, an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.

There is provided a charged particle beam system capable of determining the type of each cartridge precisely. An electron microscope that embodies the charged particle beam system includes a discriminator for determining the type of each cartridge based on the range or distance measured by a laser range finder. Plural cartridges are received in a magazine. The laser range finder measures the range to a selected one of the plural cartridges which is placed in a measurement position. A first cartridge of a first type included in the plural cartridges has a first measurement surface at a first distance to the laser range finder when placed in the measurement position. A second cartridge of a second type has a second measurement surface at a second range to the laser range finder when placed in the measurement position.

An electron beam system for wafer inspection and review of 3D devices provides a depth of focus up to 20 microns. To inspect and review wafer surfaces or sub-micron-below surface defects with low landing energies in hundreds to thousands of electron Volts, a Wien-filter-free beam splitting optics with three magnetic deflectors can be used with an energy-boosting upper Wehnelt electrode to reduce spherical and chromatic aberration coefficients of the objective lens.

In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.

An apparatus may include an exciter, disposed within a resonance chamber, to generate an RF power signal. The apparatus may include a resonator coil, disposed within the resonance chamber, to receive the RF power signal, and generate an RF output signal; and a pickup loop assembly, to receive the RF output signal and output a pickup voltage signal. The pickup loop assembly may include a pickup loop, disposed within the resonance chamber; and a variable attenuator, disposed at least partially between the resonator coil and the pickup loop. The variable attenuator may include a configurable portion, movable from a first position, attenuating a first amount of the RF output signal, to a second position, attenuating a second amount of the RF output signal, different from the first amount.

A method, system, and computer-readable medium for forming transmission electron microscopy sample lamellae using a focused ion beam including directing a high energy focused ion beam toward a bulk volume of material; milling away the unwanted volume of material to produce an unfinished sample lamella with one or more exposed faces having a damage layer; characterizing the removal rate of the focused ion beam; subsequent to characterizing the removal rate, directing a low energy focused ion beam toward the unfinished sample lamella for a predetermined milling time to deliver a specified dose of ions per area from the low energy focused ion beam; and milling the unfinished sample lamella with the low energy focused ion beam to remove at least a portion of the damage layer to produce the finished sample lamella including at least a portion of the feature of interest.

Disclosed is an object table for holding an object, comprising: an electrostatic clamp arranged to clamp the object on the object table; a neutralizer arranged to neutralize a residual charge of the electrostatic clamp; a control unit arranged to control the neutralizer, wherein the residual charge is an electrostatic charge present on the electrostatic clamp when no voltage is applied to the electrostatic clamp.

A method, apparatus, system, and computer program product for emitting x-rays. A hyperspectral x-ray system comprising a cathode, an anode, and a hyperspectral x-ray detector. The anode comprises a substrate and regions on the substrate. The regions are comprised of materials in which the regions form a pattern on the substrate and x-rays are emitted from the anode in response to an electron beam emitted by the cathode colliding with the anode. The hyperspectral x-ray detector that detects the x-rays.

A multi-beam inspection apparatus including an improved source conversion unit is disclosed. The improved source conversion unit may comprise a micro-structure deflector array including a plurality of multipole structures. The micro-deflector deflector array may comprise a first multipole structure having a first radial shift from a central axis of the array and a second multipole structure having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams.

An electrode arrangement for acting on a charged particle beam in a charged particle beam apparatus is described. The electrode arrangement includes a first electrode with a first opening for the charged particle beam; a first spacer element positioned in a first recess provided in the first electrode on a first electrode side for aligning the first electrode relative to a second electrode, the first spacer element having a first blind hole; a first conductive shield provided in the first blind hole; and a contact assembly protruding from the first electrode into the first blind hole for ensuring an electrical contact between the first electrode and the first conductive shield. Further, a contact assembly for such an electrode arrangement, a charged particle beam device with such an electrode arrangement, as well as a method of reducing an electrical field strength in an electrode arrangement are described.