The present disclosure relates to a semiconductor device and a forming method thereof. The forming method includes: providing a substrate; forming node contacts inside the substrate; forming landing pads on an upper surface of the substrate, where the landing pad is in contact with the node contact; forming a barrier layer on exposed surfaces of the landing pads and the node contacts; and after performing an electrical test on the semiconductor device on which the barrier layer is formed, removing the barrier layer on an upper surface of the landing pads.

The present disclosure provides a process corner detection circuit and a process corner detection method. The process corner detection circuit includes: M ring oscillators disposed inside a chip, M≥1, where types of N-type transistors in the M ring oscillators are not exactly the same, and types of P-type transistors in the M ring oscillators are not exactly the same; transistor types of the M ring oscillators include all transistor types used in the chip; the ring oscillators include symmetric ring oscillators and asymmetric ring oscillators; types of N-type transistors and P-type transistors in the symmetric ring oscillators are the same; and types of N-type transistors and P-type transistors in the asymmetric ring oscillators are different.

Provided is a heater substrate that includes an insulating substrate having a first surface and a second surface that is on an opposite side from the first surface, a heater wire located inside the insulating substrate, and an adjustment part that is electrically connected to the heater wire. The adjustment part includes a pair of adjustment terminals that are located on the second surface and are respectively electrically connected to two ends of a partial section of the heater wire, and an adjustment conductor that is located on the second surface and is connected to the pair of adjustment terminals. Also provided are a probe card substrate and a probe card that include the heater substrate.

A heater substrate has an insulating substrate having a first surface and a second surface on the opposite side relative to the first surface and at least one heating element of spiral shape including plural heater wire pieces and positioned in or on the insulating substrate. The heating element of spiral shape has at least one adjustment section including a turn of all or some of the plural heater wire pieces. The plural heater wire pieces include a first heater wire piece and a second heater wire piece adjacent to the inner side of the first heater wire piece. In the adjustment section, the length of the first heater wire piece is smaller than the length of the second heater wire piece.

According to the present invention, a desired one of multiple beams can be aligned with a small-diameter aperture quickly. A multi-electron beam inspection apparatus includes a beam selection aperture substrate including a first passage hole that passes all the multiple electron beams, a second passage hole through which one of the multiple electron beams is able to pass, a first slit, and a second slit not parallel to the first slit, an aperture moving unit moving the beam selection aperture substrate, a first detector detecting a current of a beam having passed through the first slit and a current of a beam having passed through the second slit, of the multiple electron beams, and a second detector detecting multiple secondary electron beams including reflected electrons, discharged from a substrate, due to application of the multiple electron beams, having passed through the first passage hole, to the substrate. The substrate is inspected based on an output signal from the second detector.

An inspection jig includes a first board, a probe unit including a probe, a second board located in parallel with the first board and electrically connected to the probe, an electrical connection portion electrically connecting the first board and the second board, and a board holding portion holding the second board in parallel with the first board in the thickness direction and holding the probe unit. The board holding portion includes a probe-side holding plate located on the probe unit side of the second board and a holding plate support portion that positions the probe-side holding plate at a position where the probe-side holding plate is in parallel with the first board in the thickness direction. The board holding portion holds the second board so that the first board and the second board are electrically connected via the electrical connection portion being sandwiched between the first board and second board.

An imaging element including a plurality of semiconductor chips which are bonded together is prevented from being damaged._The imaging element includes the plurality of semiconductor chips each including a semiconductor substrate and a wiring region. One of the plurality of semiconductor chips is disposed with a photoelectric conversion unit that performs photoelectric conversion of incident light. Two of the plurality of semiconductor chips each includes a first pad, surfaces of the wiring regions of the two semiconductor chips being bonded together, the first pads being disposed on the respective surfaces of the wiring regions and being joined to each other. At least one of the two semiconductor chips further includes a second pad disposed in the wiring region and an insulating film disposed between the second pad and the surface for bonding, the second pad being formed with a protrusion toward the surface for bonding.

A control part of a semiconductor fault analysis device outputs an alignment command that moves a chuck to a position at which a target is detectable by a first optical detection part and then aligns an optical axis of a second optical system with an optical axis of a first optical system with the target as a reference, and outputs an analysis command that applies a stimulus signal to a semiconductor device and receives light from the semiconductor device emitted according to a stimulus signal with at least one of a first optical detection part and a second optical detection part in a state in which a positional relationship between the optical axis of the first optical system and the optical axis of the second optical system is maintained.

The present disclosure provides a wafer repair method, system, apparatus and device, and a storage medium, relating to the field of semiconductor devices. The method includes: a laser equipment acquires test data for repairing a predetermined wafer; the laser equipment sending the test data to a processing server so that the processing server converts the test data into repair data in a predetermined format; and the laser equipment obtaining the repair data in the predetermined format to repair the predetermined wafer.

A display substrate, a manufacturing method thereof, and a display device are provided. The display substrate includes a base substrate, a sub-pixel unit, a data line, a scan line, a plurality of test contact pads, a first peripheral-zone insulating layer and an auxiliary electrode layer. The base substrate includes a display zone and a peripheral zone, the peripheral zone including a test bonding zone. Each of the plurality of the test contact pads includes a first test-contact-pad metal layer and a second test-contact-pad metal layer, wherein the second test-contact-pad metal layer covers the first test-contact-pad metal layer and contacts the first test-contact-pad metal layer in at least portion of a periphery of the first test-contact-pad metal layer. The auxiliary electrode layer includes a plurality of first relay electrode patterns located within the test bonding zone and a plurality of auxiliary electrodes located within the display zone.