An apparatus, comprising at least one vessel having a bottom and at least one sidewall extending from the bottom, wherein the at least one sidewall encloses an interior of the at least one vessel, a shaft has a proximal end and a distal end, wherein the distal end of the shaft extends into the interior of the at least one vessel, wherein the proximal end of the shaft is coupled to a motor, at least one support structure which extends laterally from the shaft; and a substrate attachment fixture on a distal end of the at least one support structure, wherein the at least one support structure and the substrate attachment fixture are within the interior of the at least one vessel.

A highly reliable semiconductor device having a high on-state current is provided. The semiconductor device includes a first insulator, a second insulator over the first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a first conductor and a second conductor over the second oxide, a third insulator over the first conductor, a fourth insulator over the second conductor, a third oxide over the second oxide, a fifth insulator over the third oxide, a third conductor that is positioned over the fifth insulator and overlaps with the third oxide, a sixth insulator covering the first to fifth insulators, the first oxide, the second oxide, and the first to third conductors, and a seventh insulator over the sixth insulator.

To provide a semiconductor device having a structure suitable for higher integration. This semiconductor device includes: a first semiconductor substrate; and a second semiconductor substrate. The first semiconductor substrate is provided with a first electrode including a first protruding portion and a first base portion. The first protruding portion includes a first abutting surface. The first base portion is linked to the first protruding portion and has volume greater than volume of the first protruding portion. The second semiconductor substrate is provided with a second electrode including a second protruding portion and a second base portion. The second protruding portion includes a second abutting surface that abuts the first abutting surface. The second base portion is linked to the second protruding portion and has volume greater than volume of the second protruding portion. The second semiconductor substrate is stacked on the first semiconductor substrate.

Provided is a solid-state imaging device including a first substrate that includes a pixel unit, a first semiconductor substrate, and a first multi-layered wiring layer stacked, a second substrate that includes circuit, a second semiconductor substrate, and a second multi-layered wiring layer stacked, the circuit having a predetermined function, a third substrate that includes a circuit, a third semiconductor substrate, and a third multi-layered wiring layer. The first substrate and the second substrate being bonded together such that the first multi-layered wiring layer is opposite to the second semiconductor substrate, and a first coupling structure for electrically coupling the circuit of the first substrate with the circuit of the second substrate, the first coupling structure is on bonding surfaces of the first substrate and the second substrate, and includes an electrode junction structure in which electrodes on the respective bonding surfaces are joined to each other in direct contact.

Embodiments of the present disclosure provide a thin film transistor assembly, an array substrate and a display panel. The thin film transistor assembly includes a first thin film transistor and a second thin film transistor disposed on a substrate. The first thin film transistor includes a first source electrode, a first drain electrode, and a first active layer. The second thin film transistor includes a second source electrode. The first source electrode is disposed on a side of the first active layer facing towards the substrate. The first drain electrode is disposed on a side of the first active layer facing away from the substrate. An orthogonal projection of the first source electrode on the substrate overlaps an orthogonal projection of the second source electrode on the substrate.

For erasing four-terminal semiconductor Non-Volatile Memory (NVM) devices, we apply a high positive voltage bias to the control gate with source, substrate and drain electrodes tied to the ground voltage for moving out stored charges in the charge storage material to the control gate. For improving erasing efficiency and NVM device endurance life by lowering applied voltage biases and reducing the applied voltage time durations, we engineer the lateral impurity profile of the control gate near dielectric interface such that tunneling occurs on the small lateral region of the control gate near the dielectric interface. We also apply the non-uniform thickness of coupling dielectric between the control gate and the storage material for the NVM device such that the tunneling for the erase operation occurs within the small thin dielectric areas, where the electrical field in thin dielectric is the strongest for tunneling erase operation.

Biosensor including a device base having a sensor array of light sensors and a guide array of light guides. The light guides have input regions that are configured to receive excitation light and light emissions generated by biological or chemical substances. The light guides extend into the device base toward corresponding light sensors and have a filter material. The device base includes device circuitry electrically coupled to the light sensors and configured to transmit data signals. A passivation layer extends over the device base and forms an array of reaction recesses above the light guides. The biosensor also includes peripheral crosstalk shields that at least partially surround corresponding light guides of the guide array to reduce optical crosstalk between adjacent light sensors.

Biosensor including a device base having a sensor array of light sensors and a guide array of light guides. The light guides have input regions that are configured to receive excitation light and light emissions generated by biological or chemical substances. The light guides extend into the device base toward corresponding light sensors and have a filter material. The device base includes device circuitry electrically coupled to the light sensors and configured to transmit data signals. A passivation layer extends over the device base and forms an array of reaction recesses above the light guides. The biosensor also includes peripheral crosstalk shields that at least partially surround corresponding light guides of the guide array to reduce optical crosstalk between adjacent light sensors.

A display device and a method of manufacturing the same. The display device includes a pixel connected to a scan line and a data line intersecting the scan line, and a driving transistor and a switching transistor disposed in the pixel. The driving transistor includes a substrate, a first active layer disposed on the substrate, a first gate electrode disposed on the first active layer, and a second insulating film contacting the first gate electrode and the first gate electrode. The switching transistor includes a second active layer disposed on the substrate, a second gate electrode disposed on the second active layer, a first insulating film contacting the second active layer and the second gate electrode, and a second insulating film covering the first insulating film. The first insulating film and the second insulating film are made of different materials from each other.

A display device includes: a first substrate; a second substrate on the first substrate; a pixel between the first substrate and the second substrate and including a pixel area and a non-pixel area around the pixel area; a color filter between the pixel and the second substrate and overlapping with the pixel area; and a plurality of protrusions between the second substrate and the color filter, and each of the protrusions has a width that decreases as a distance from the second substrate increases.