The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, belongs to the field of display technology. The method includes forming a first thin film transistor, which includes: forming a first gate of the first thin film transistor on a base substrate through a patterning process; forming a first gate insulating layer on a side of the first gate distal to the base substrate; sequentially forming a first semiconductor material layer, a second gate insulating layer and a second gate metal layer on a side of the first gate insulating layer distal to the base substrate, and forming a pattern including an active layer of the first thin film transistor, a pattern of the second gate insulating layer and a second gate of the first thin film transistor through a patterning process.

A stressed substrate for transient electronic systems (i.e., electronic systems that visually disappear when triggered to do so) that includes one or more stress-engineered layers that store potential energy in the form of a significant internal stress. An associated trigger mechanism is also provided that, when triggered, causes an initial fracture in the stressed substrate, whereby the fracture energy nearly instantaneously travels throughout the stressed substrate, causing the stressed substrate to shatter into multiple small (e.g., micron-sized) pieces that are difficult to detect. The internal stress is incorporated into the stressed substrate through strategies similar to glass tempering (for example through heat or chemical treatment), or by depositing thin-film layers with large amounts of stress. Patterned fracture features are optionally provided to control the final fractured particle size. Electronic systems built on the substrate are entirely destroyed and dispersed during the transience event.

A stressed substrate for transient electronic systems (i.e., electronic systems that visually disappear when triggered to do so) that includes one or more stress-engineered layers that store potential energy in the form of a significant internal stress. An associated trigger mechanism is also provided that, when triggered, causes an initial fracture in the stressed substrate, whereby the fracture energy nearly instantaneously travels throughout the stressed substrate, causing the stressed substrate to shatter into multiple small (e.g., micron-sized) pieces that are difficult to detect. The internal stress is incorporated into the stressed substrate through strategies similar to glass tempering (for example through heat or chemical treatment), or by depositing thin-film layers with large amounts of stress. Patterned fracture features are optionally provided to control the final fractured particle size. Electronic systems built on the substrate are entirely destroyed and dispersed during the transience event.

A thin film transistor includes a gate electrode, an active layer formed of oxide semiconductor material on a substrate, and a gate insulation layer therebetween. The active layer includes a channel region corresponding to the gate electrode, a source region at one side of the channel region, and a drain region at the other side of the channel region. The source region includes a first upper portion and the drain region includes a second upper portion that includes the oxide semiconductor material and Si.

Biosensor including a device base having a sensor array of light sensors and a guide array of light guides. The light guides have input regions that are configured to receive excitation light and light emissions generated by biological or chemical substances. The light guides extend into the device base toward corresponding light sensors and have a filter material. The device base includes device circuitry electrically coupled to the light sensors and configured to transmit data signals. A passivation layer extends over the device base and forms an array of reaction recesses above the light guides. The biosensor also includes peripheral crosstalk shields that at least partially surround corresponding light guides of the guide array to reduce optical crosstalk between adjacent light sensors.

Biosensor including a device base having a sensor array of light sensors and a guide array of light guides. The light guides have input regions that are configured to receive excitation light and light emissions generated by biological or chemical substances. The light guides extend into the device base toward corresponding light sensors and have a filter material. The device base includes device circuitry electrically coupled to the light sensors and configured to transmit data signals. A passivation layer extends over the device base and forms an array of reaction recesses above the light guides. The biosensor also includes peripheral crosstalk shields that at least partially surround corresponding light guides of the guide array to reduce optical crosstalk between adjacent light sensors.

A transistor includes a gate electrode, an active layer facing the gate electrode, and a source electrode and a drain electrode connected to the active layer. The active layer includes a lower active layer including an oxide-based semiconductor material, and an upper active layer including the oxide-based semiconductor material and an oxygen-gettering material.

A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

The present disclosure provides a display substrate, a method for preparing the same, and a display device. The method for preparing the display substrate includes a step of preparing a pixel driving circuit on a substrate, the step specifically includes: preparing a first active layer of an oxide transistor on the substrate; preparing a barrier layer on a surface of the first active layer away from the substrate, an orthogonal projection of the barrier layer on the substrate covering an orthogonal projection of the first active layer on the substrate; preparing a low-temperature polysilicon transistor is on the substrate; and preparing a first gate insulating layer, a first gate electrode, a first input electrode, and a first output electrode of the oxide transistor on the substrate.

Memory devices might include a plurality of memory cell pairs each configured to be programmed to store a digit of data; and control circuitry configured to cause the memory device to compare the stored digit of data of each memory cell pair to a received digit of data, determine whether a match condition or a no-match condition is indicated between the stored digit of data of each memory cell pair and the received digit of data, and deem a match condition to be met between the received digit of data and the stored digits of data of the plurality of memory cell pairs in response to a match condition being determined for a majority of memory cell pairs of the plurality of memory cell pairs.