An epitaxial wafer which allows manufacture of a photodiode having suppressed dark current and ensured sensitivity, and a method for manufacturing the epitaxial wafer, are provided. The epitaxial wafer of the present invention includes: a III-V semiconductor substrate; and a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer. The total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5×10.sup.15 cm.sup.−3.

A quantum dot having core-shell structure includes a core formed of ZnO.sub.zS.sub.1-z, and at least one shell covering the core, and formed of Al.sub.xGa.sub.yIn.sub.1-x-yN, wherein at least one of x, y, and z is not zero and is not one.

The present invention provides: a film that comprises single-layer carbon nanotubes having shapes which enable the characteristics thereof to be sufficiently exhibited; and a process for producing the film. The film, which comprises single-layer carbon nanotubes, has portions where single-layer carbon nanotubes are densely present and portions where single-layer carbon nanotubes are sparsely present, the dense portions forming a pseudo-honeycomb structure in a surface of the film.

The present invention relates to a photoelectrode for a dye-sensitized solar cell including inorganic nanoparticles, wherein a three-dimensional pattern is formed on the surface of the photoelectrode. The three-dimensional photoelectrode for a dye-sensitized solar cell according to the present invention has a micrometer-sized pattern and thus exhibits an improved light absorption caused by a total reflection and a increased light path.

In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.

A method of forming a semiconductor material of a photovoltaic device that includes providing a surface of a hydrogenated amorphous silicon containing material, and annealing the hydrogenated amorphous silicon containing material in a deuterium containing atmosphere. Deuterium from the deuterium-containing atmosphere is introduced to the lattice of the hydrogenated amorphous silicon containing material through the surface of the hydrogenated amorphous silicon containing material. In some embodiments, the deuterium that is introduced to the lattice of the hydrogenated amorphous silicon containing material increases the stability of the hydrogenated amorphous silicon containing material.

Disclosed is a solar cell having a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side, and further includes an insulating layer between the first electroconductive layer and the second electroconductive layer. The first electroconductive layer includes a low-melting-point material, and a part of the second electroconductive layer is conductively connected with the first electroconductive layer through, for example, an opening in the insulating layer. The second electrode layer is preferably formed by a plating method. In addition, it is preferable that before forming the second electroconductive layer, annealing by heating is carried out to generate the opening section in the insulating layer.

A timepiece includes a dial plate, and a solar battery which is disposed on a rear side of the dial plate. The dial plate is provided with grooves or ridges. The grooves or the ridges have portions where inclination angles with regard to a normal line of the dial plate are different, and due to this, light which is transmitted through the dial plate is incident from a plurality of directions with angles which are different with regard to the solar battery.

A photovoltaic (PV) device including: (a) a p-n junction having (i) p-type silicon substrate with an Al-doped P++ surface, (ii) a wide band intrinsic AlP region having a first side formed on the Al-doped P++ surface of the silicon substrate, and (iii) an Si-doped n++ surface formed on a second side of the AlP region that is opposite to the first side; (b) charged quantum dots formed on the Si-doped n++ surface of the p-n junction and optionally (c) an electrode connected to each side of the device; wherein the charged quantum dots are operatively linked to the p-n junction to enable electrons harvested from IR photons absorbed by the quantum dots to be harvested with electrons harvested from photons absorbed by the p-n junction and wherein the wide band intrinsic AlP region is configured to inhibit leakage of hole current. Also, a method for forming the PV device.

This infrared detection element includes a buffer layer (InAsSb layer) 3, a buffer layer (InAs layer) 4, and a light absorption layer (InAsSb layer) 5. A critical film thickness hc of the InAs layer satisfies a relation of hc<t with a thickness t of the InAs layer. In this case, it is possible to improve crystallinities of the buffer layer 4 of InAs and the light absorption layer 5 of InAsSb formed on the buffer layer 3.