Patent classifications
H01L31/00
Two-junction photovoltaic devices
The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
Photoelectric conversion element, solid-state imaging device, and electronic apparatus
A photoelectric conversion element according to an embodiment of the disclosure includes a first electrode and a second electrode, and an organic semiconductor layer. The first electrode and the second electrode are disposed to face each other. The organic semiconductor layer is provided between the first electrode and the second electrode, and contains a fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene.
Integrated fan-out package
An integrated fan-out (InFO) package includes a plurality of dies, an encapsulant, an insulating layer, a redistribution structure, a plurality of conductive structures, an antenna confinement structure, and a slot antenna. The encapsulant laterally encapsulates the dies. The insulating layer is disposed over the dies and the encapsulant. The redistribution structure is sandwiched between the insulating layer and the dies. The conductive structures and the antenna confinement structure are embedded in the insulating layer. The slot antenna is disposed on the insulating layer.
Optical device and method for manufacturing the same
An optical device includes a substrate, a light receiving component, an encapsulant, a coupling layer and a light shielding layer. The light receiving component is disposed on the substrate. The encapsulant covers the light receiving component. The coupling layer is disposed on at least a portion of the encapsulant. The light shielding layer is disposed on the coupling layer.
Semiconductor device, method of manufacturing semiconductor device, and imaging element
To provide a semiconductor device having a structure suitable for higher integration. This semiconductor device includes: a first semiconductor substrate; and a second semiconductor substrate. The first semiconductor substrate is provided with a first electrode including a first protruding portion and a first base portion. The first protruding portion includes a first abutting surface. The first base portion is linked to the first protruding portion and has volume greater than volume of the first protruding portion. The second semiconductor substrate is provided with a second electrode including a second protruding portion and a second base portion. The second protruding portion includes a second abutting surface that abuts the first abutting surface. The second base portion is linked to the second protruding portion and has volume greater than volume of the second protruding portion. The second semiconductor substrate is stacked on the first semiconductor substrate.
Photoelectric conversion device and manufacturing method thereof
A photoelectric conversion device in an embodiment includes a first photoelectric conversion part including a first transparent electrode, a first photoelectric conversion layer, and a first counter electrode and a second photoelectric conversion part including a second transparent electrode, a second photoelectric conversion layer, and a second counter electrode, the first photoelectric conversion part and the second photoelectric conversion part being provided on a transparent substrate. The first counter electrode and the second transparent electrode are electrically connected by a connection part. As for the first photoelectric conversion layer and the second photoelectric conversion layer, adjacent portions of the adjacent first and second photoelectric conversion layers are electrically separated by an inactive region having electrical resistance higher than that of the first and second photoelectric conversion layers.
Artificial photosynthetic devices utilizing polariton antennas
An organic photovoltaic device comprises a substrate, a reflector positioned over the substrate, a first electrode positioned over at least a first portion of the reflector, a polaritonic antenna layer positioned over a second portion of the reflector different from the first portion, electrically connected to the first electrode, and at least one unit reaction cell positioned over at least part of the first electrode, the at least one unit reaction cell comprising a heterojunction layer comprising a donor material and an acceptor material, positioned over the first electrode, and a second electrode positioned over the heterojunction, wherein the polaritonic antenna and the reflector are configured to convert incoming photonic energy to polaritons. A method of fabricating an organic photovoltaic device is also disclosed.
TRANSPARENT ELECTRONIC DEVICE, LAMINATED GLASS, AND MANUFACTURING METHOD OF TRANSPARENT ELECTRONIC DEVICE
A transparent electronic device, including: a transparent insulating substrate (TIS); an electronic element which is formed on a main surface of the TIS and which has an area of 250,000 μm.sup.2 or less; and an opaque power feeder configured to feed power to the electronic element. The electronic element is a light-emitting diode element or a sensor. The TIS includes: a first TIS with the electronic element and a first wiring connected to the electronic element being formed on one main surface; and a second TIS with a second wiring being formed on one main surface, the electronic element is not formed on the second TIS, and one end of the first wiring and one end of the second wiring are electrically connected to each other and the opaque power feeder is connected to another end of the second wiring in an edge part of the second TIS.
Schottky contact-based light detection device and light detection method using same
The present disclosure relates to a light detection device including: a substrate 100; a lower electrode 200 formed on the substrate; an organic semiconductor layer 300 formed on the lower electrode 200; and an upper electrode 400 formed on the organic semiconductor layer 300, wherein a Schottky contact is formed at least one of a junction between the organic semiconductor layer and the lower electrode or a junction between the organic semiconductor layer and the upper electrode.
Solar power plant design with underground light room
A new solar power plant design that utilizes a “Light Room” built underground, commercially available mirrors used in CSP and CPV power plants, and also commercially available PV modules. The usage of a Light Room built underground significantly increases sunlight to electricity conversion efficiency by a higher percentage of sunlight directed towards the PV modules, which are kept cool and clean via fans. Construction, operations and maintenance become easier, faster and cheaper. Overall land usage requirement, investment cost per unit installed power and LCOE are significantly reduced. The design allows installation in rural and urban areas, making it possible for applications not feasible with the current state of the art.