Disclosed herein are single electron transistor (SET) devices, and related methods and devices. In some embodiments, a SET device may include: first and second source/drain (S/D) electrodes; a plurality of islands, disposed between the first and second S/D electrodes; and dielectric material disposed between adjacent ones of the islands, between the first S/D electrode and an adjacent one of the islands, and between the second S/D electrode and an adjacent one of the islands.

Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.

Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.

The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

A curable silicone composition of the present invention contains certain quantities of straight-chain organopolysiloxane which has at least two alkenyl groups and bound to silicon atoms and ≥0 mol % and <5 mol % of aryl groups per molecule, organopolysiloxane resin having at least two alkenyl groups bound to a silicon atom in the molecule, organohydrogenpolysiloxane resin which has a network molecular structure with at least two hydrogen atoms bound to a silicon atom per molecule, organohydrogenpolysiloxane resin which has a network molecular structure with at least two hydrogen atoms bound to a silicon atom per molecule, only at the end of the molecule, and hydrosilylation reaction catalyst, and (total mols of silicon-atoms-bound) hydrogen atoms/(total mols of silicon-atom-bound alkenyl groups) in the organopolysiloxane in the composition=1-3.

The present invention relates to a photovoltaic device (1). The device comprises a solar cell unit (2) comprising a porous light-absorbing layer (3) at a top side (2a), of a porous first conducting layer (4), a porous substrate (5) of an insulating material. The solar cell unit comprises a conducting medium. The photovoltaic device comprises a first conductor (7) in electrical contact with the first conducting layer (4), a second conductor (8) in electrical contact with the second conducting layer (6), and an encapsulation (9) encapsulating the solar cell unit. The encapsulation comprises a top sheet (9a) and a bottom sheet (9b). The first and second conductors (7, 8) are arranged between the encapsulation (9) and the solar cell unit (2) at the bottom side (2b) of the solar cell unit (2). The second conductor (8) is arranged between the second conducting layer (6) and the bottom sheet (9b) of the encapsulation (9), and the first conductor (7) is arranged between the porous substrate (5) and the bottom sheet (9b). The first conductor (7) is electrically insulated from the second conducting layer (6). A part (14) of the porous substrate (5) comprises conducting material (12) disposed between the first conductor (7) and the first conducting layer (4) to provide electrical contact between the first conductor and the first conducting layer.

The invention provides an optical sensor package. The optical sensor package includes: a printed circuit board (PCB); a sensor disposed on the PCB; a glass cover disposed directly on the sensor; and an aperture disposed on the PCB comprised of a solid perimeter surrounding the sensor and a ceiling having a cut-out section above the glass cover. The cut-out section of the ceiling is smaller in area than the glass cover. The part of the aperture ceiling which overhangs the glass cover is thicker than the remaining part. The optical sensor package further includes an LED die disposed on the PCB, and Kapton tape placed over the ceiling of the aperture.

A three-tandem (3T) perovskite/silicon (PVT)-based tandem solar cell (TSC) includes an antireflection coating (ARC), a first transparent conductive oxide layer (TCO), a hole transport layer (HTL), a perovskite (PVT) layer, a second transparent conductive oxide layer (TCO), an electron transport layer (ETL), a plurality of buried contacts, a p-type Si layer, a p-type wafer-based homo-junction silicon solar cell, a n.sup.+ silicon layer, a back contact layer. The solar cell further includes a top sub-cell, a bottom sub-cell and a middle contact-based tandem. The top sub-cell includes the PVT layer. The bottom sub-cell includes the silicon solar cell. The middle contact-based tandem includes the second TCO layer to be used as the middle contact-based tandem, as well as a recombination layer for current collection. Further, a conduction and a valence band edge are employed at a front surface of the ETL.

A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.