A display device includes a plurality of semiconductor light emitting diodes, first and second electrodes respectively extending from the plurality of semiconductor light emitting diodes to supply an electrical signal to the plurality of semiconductor light emitting diodes, a plurality of pair electrodes disposed on a substrate and having a first electrode and a second electrode, a dielectric layer disposed on the plurality of pair electrodes, and a chemical bond layer disposed between the dielectric layer and the plurality of semiconductor light emitting diodes and forming a covalent bond with the dielectric layer and each of the plurality of semiconductor light emitting diodes. The chemical bond layer bonds the semiconductor light emitting diodes to the dielectric layer when a voltage applied to the plurality of pair electrodes is cut off after the plurality of semiconductor light emitting diodes are assembled on the dielectric layer.

A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 μm.sup.2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.

In an embodiment an optoelectronic device includes an epitaxial layer stack having at least a first epitaxial layer and a second epitaxial layer arranged above the first epitaxial layer, wherein the following layers are embedded in the epitaxial layer stack a first semiconductor layer of a first conductivity type, an active layer arranged above the first semiconductor layer and configured to generate light, and a second semiconductor layer of a second conductivity type arranged above the active layer, wherein an interface between the first epitaxial layer and the second epitaxial layer extends at least partially through the first semiconductor layer and/or the second semiconductor layer, and wherein the active layer is embedded in a non-doped barrier layer, the barrier layer covering one or more side surfaces of the active layer.

A method of forming a sandwich passivation layer (405) on a semiconductor device (400) comprising a bond pad (404) is provided. The method comprises forming a first layer (406) over a surface of the semiconductor device (400), removing a part of the first layer (406) to expose a surface of the bond pad (404), forming a second layer (407) over the first layer (406) and the surface of the bond pad (404), and forming a third layer (408) over the second layer (407), wherein the surface of the bond pad (404) is not in contact with the first layer (406) or third layer (408).

A light-emitting element contains negative ions and positive ions, and includes a solid ionic layer, a layer containing quantum dots, and a cathode electrode and an anode electrode. The ionic layer includes a p-type doped region on the anode electrode side containing the negative ions in a higher quantity than the positive ions, an n-type doped region on the cathode electrode side containing the positive ions in a higher quantity than the negative ions, and a junction region between the p-type doped region and the n-type doped region. The layer containing the quantum dots is adjacent to the junction region. Alternatively, the quantum dots are contained in the junction region. Alternatively, the quantum dots are adjacent to the junction region.

A light-emitting element includes a first semiconductor layer doped to have a first polarity; a second semiconductor layer doped to have a second polarity that is different from the first polarity; an active layer placed between the first semiconductor layer and the second semiconductor layer; and an insulating layer surrounding at least the outer surface of the active material. The insulating layer includes an insulating film surrounding the active layer, and an element dispersion agent including a magnetic metal and bonded to an outer surface of the insulating film.

A light-emitting diode (LED) display device, including a substrate, a de-mura region, a plurality of mounting blocks, a first LED chip array and a second LED chip array, is disclosed. The substrate includes a first region and a second region adjacent to each other. The de-mura region includes part of the first region and part of the second region. The mounting blocks are arranged in the first and the second region as an array, each mounting block including a first and a second mounting part. The first and the second mounting part are connected in parallel. The first LED chip array includes multiple first LED chips. The second LED chip array includes multiple second LED chips. Each first mounting part is arranged on the first side of the corresponding mounting block, and each second mounting part is arranged on the second side of the corresponding mounting block.

A method for manufacturing a nitride semiconductor light-emitting element includes growing a p-type cladding layer with an average Al composition ratio in a thickness direction of not less than 70%, and growing a p-type contact layer with an Al composition ratio of not more than 10%. A flow rate ratio F.sub.p/F.sub.III is a p/III ratio and a flow rate ratio F.sub.V/F.sub.III is a V/III ratio. The p-type cladding layer is grown in the growing the p-type cladding layer at a growth rate of not more than 2.5 nm/min, a p/III ratio of not less than 0.0002 and not more than 0.0400 and a VIII ratio of not more than 7000. The p-type contact layer is grown in the growing the p-type contact layer at a growth rate of not more than 3.3 nm/min, a p/III ratio of not less than 0.0200 and a V/III ratio of not less than 10000.

A semiconductor light-emitting device includes a GaAs (gallium arsenide) substrate of a cubic crystal, a light-emitting layer and a multi-semiconductor layer. The light-emitting layer being provided on the GaAs substrate. The light-emitting layer includes InGaAs (indium gallium arsenide) represented by a compositional formula InxGa1-xAs (0<x<1). The multi-semiconductor layer being provided on a front surface of the GaAs substrate between the GaAs substrate and the light-emitting layer. The multi-semiconductor layer is tilted with respect to a (100) plane of the cubic crystal. The multi-semiconductor layer includes a first layer and a second layer. The first and second layers are alternately stacked in a direction perpendicular to the front surface of the GaAs substrate. The first layer is different in composition from the second layer.

Provided is an electronic device including a plurality of substrate electrodes on a substrate, the substrate electrodes including initial electrodes and spare electrodes, a bonding material covering the initial electrodes and the spare electrodes, module structures respectively provided on first initial electrodes of the initial electrodes, and solders between each of the first initial electrodes and each of the module structures, wherein the spare electrodes include second spare electrodes, wherein the module structures are not provided on the second spare electrodes, wherein the bonding material on the first initial electrodes is harder than the bonding material on the second spare electrodes.