A display device may include including a first insulating reflective layer including a distributed Bragg reflector above a substrate, a first electrode and a second electrode above the first insulating reflective layer, a second insulating reflective layer including a distributed Bragg reflector above the first electrode and the second electrode, and a light emitting element above the second insulating reflective layer.

An apparatus for fabricating a display panel includes: a chamber; a first process driver configured to sequentially perform dispensing and coating processes on a display substrate or a light-emitting diode substrate in an internal processing space of the chamber; a second process driver configured to selectively perform at least one process selected from among moving, dipping, laminating, bonding, and laser irradiating processes on the display substrate or the light-emitting diode substrate; and a third process driver where the dipping and laminating processes on the display substrate or the light-emitting diode substrate are performed.

A display device includes a first electrode and a second electrode that are disposed on a substrate to be spaced apart from each other, a first insulating layer disposed on the first electrode and the second electrode, a light emitting element disposed on the first insulating layer, a first connection electrode in electrical contact with a first end of the light emitting element on the first insulating layer, and an organic layer disposed on the first connection electrode and surrounding the light emitting element.

The invention is a small-sized vertical light emitting diode chip with high energy efficiency, wherein a PN junction structure is arranged on a light-emitting region platform of an interface structure; a highly reflective metal layer is arranged under the light-emitting region platform; the interface structure is provided with a P-type ohmic contact area under an outwardly extending platform adjacent to the light-emitting region platform; an insulating layer is formed on the outwardly extending platform; an N-type ohmic contact electrode is in ohmic contact with the PN junction structure and covers the border covering region at a position opposite to the outwardly extending platform; the current conduction is achieved diagonally on the opposite sides by locally diagonally symmetric geometric positioning of the N-type ohmic contact electrode and the P-type ohmic contact area.

There is provided a production management apparatus including: a memory section configured to memorize component data in which ranks of LED components stored in the stocker are associated with identification information of the LED components; a rank input section configured to accept a rank of the LED component in the LED components of the multiple types as a designated rank, the LED component being used in producing the board product; and a component group generating section configured to generate a component group into which the LED components of the multiple ranks including the designated rank are combined so as to satisfy a required specification of the board product, based on the ranks of the LED components which are included in the component data.

A light-emitting device includes: a substrate; a unit light-emitting area disposed on the substrate; first and second electrodes disposed in the unit light-emitting area to be separated from each other; a plurality of rod-shaped LEDs disposed between the first and second electrodes; a reflective contact electrode disposed on opposite ends of the rod-shaped LEDs to electrically connect the rod-shaped LEDs to the first and second electrodes; and a light-transmitting structure disposed between the first and second electrodes and extending to cross the rod-shaped LEDs.

A light-emitting device includes: a substrate; a plurality of light-emitting elements mounted to the substrate; and a phosphor layer provided on the plurality of light-emitting elements, the phosphor layer including: a plurality of phosphor particles, and a glass layer covering surfaces of the phosphor particles, wherein the phosphor particles are bonded to each other by the glass layer, and an air layer is formed between the phosphor particles.

A backplane, a manufacturing method thereof, a backlight module and a display panel are provided. The backplane includes a base substrate; a first conductive layer located on the base substrate and including a wire; a first protection layer located at a side of the first conductive layer facing away from the base substrate; a second conductive layer located on the first protection layer and including a conductive sub-layer, the conductive sub-layer penetrating the first protection layer to be connected with the wire; a second protection layer located at a side of the second conductive layer facing away from the base substrate; a micro light-emitting diode (LED) penetrating the second protection layer to be connected with the conductive sub-layer; and a metallic reflective layer, located on the second protection layer and configured to reflect light irradiated onto the metallic reflective layer from the micro LED.

An electronic device is provided, the electronic device includes a driving substrate, the driving substrate includes a plurality of first grooves and a plurality of second grooves, the first grooves and the second grooves have different sizes, at least one first electronic component of the plurality of first electronic components is disposed in one of the plurality of first grooves, at least one second electronic component of the plurality of second electronic components is disposed in one of the plurality of second grooves, a maximum length passing through a center of a bottom surface of the at least one first electronic component is defined as L1, a bottom length of one side of at least one second groove among the second grooves is defined as L2, and the at least one first electronic component and the at least one second groove satisfy the condition of L1>L2.

Embodiments of the present disclosure generally relate to light emitting diodes LEDs and methods of manufacturing the LEDs. The LEDs include a mesa-structure that improves light extraction of the LEDs. Furthermore, the process for forming the LEDs refrains from using physical etching to a quantum well active region of the LEDs to prevent compromising performance at the quantum well sidewall.