A color conversion substrate includes: a base part in which a first light-transmitting area and a second light-transmitting area are defined; a first stack disposed on the base part and a second stack disposed on the first stack; a first wavelength conversion pattern overlapping the second light-transmitting area, and disposed on the second stack, where the first wavelength conversion pattern converts light of a first color into light of a second color; and a light-transmitting pattern overlapping the first light-transmitting area and disposed between the first stack and the second stack, where portions of the first stack and the second stack in the second light-transmitting area are in direct contact with each other to constitute a blue light reflective layer.

A p-n junction based III-nitride device in which the p-type layers adjacent to the n-type layers are activated by thermal annealing with a porous n-type tunnel junction layer or layers. The porosity of the n-type tunnel junction layer(s) allows for gas exchange to occur, allowing efficient p-type nitride semiconductor activation. This porosification and activation step can be inserted wherever desired into an existing fabrication process for an LED, laser diode, or any other nitride semiconductor device. In one example, the device comprises multiple LED structures grown successively, separated by tunnel junctions and the buried p-type layers are activated by thermal annealing with adjacent porous n-type layers. Using this method, efficient monolithic multi-color LEDs can be formed.

A display substrate and a display apparatus are provided. including a first side for displaying and a second side opposite the first side, a base substrate, a display area, at least one connection line and at least one transfer electrode. Each of the at least one connection line at least partially extends in a first direction and is connected to first power lines respectively connected to adjacent first pixel unit groups in a first display area in the first direction; and each of the at least one transfer electrode at least partially extends in the first direction and is connected to first signal lines that are respectively connected to the adjacent first pixel unit groups in the first display area in the first direction, film layers where at least part of the at least one transfer electrode and each of the at least one connection line are located are different.

A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h2) between the first area and the second area is no greater than 1 μm. A display apparatus and a lighting apparatus are also disclosed.

A display device includes a pixel array substrate and a circuit board. The pixel array substrate has a first surface, a second surface opposite to the first surface, and a first side surface connecting the first surface and the second surface. Multiple bonding pads are located on the first surface. The circuit board is bent from above the first surface of the pixel array substrate to below the second surface. The circuit board is electrically connected to the bonding pads and includes a thermoplastic substrate. The thermoplastic substrate includes a third surface facing the pixel array substrate and a fourth surface opposite to the third surface. The thermoplastic substrate includes a first bend formed by thermoplastics.

An epitaxial structure and a manufacturing method thereof, and a light-emitting diode (LED) device are provided. The epitaxial structure includes an N-type semiconductor layer, a multiple quantum well (MQW) active layer, and a P-type semiconductor layer sequentially stacked in a growth direction. The MQW active layer includes a front MQW active layer and a back MQW active layer sequentially stacked in the growth direction. The front MQW active layer includes at least two groups of first quantum barrier layers and first quantum well layers alternately stacked. The back MQW active layer includes at least two groups of second quantum barrier layers and second quantum well layers alternately stacked. A content of an aluminum (Al) component in each second quantum well layer is gradually increased in the growth direction, and a content of a gallium (Ga) component in each second quantum well layer is gradually decreased in the growth direction.

A light emitting display device includes a substrate, an organic layer, a conductor, an anode, and a pixel definition layer. The organic layer overlaps the substrate and has a connection opening. The conductor is positioned between the substrate and the organic layer. The anode is positioned on the organic layer and is partially positioned inside the connection opening. The pixel definition layer exposes an exposed portion of the anode. The organic layer has a halftone exposure portion and a neighboring portion. The halftone exposure portion overlaps the exposed portion of the anode and overlaps the conductor. The neighboring portion neighbors the halftone exposure portion. A face of the halftone exposure portion and a face of the neighboring portion are spaced from the substrate by a first distance and a second distance, respectively. A difference between the first distance and the second distance is 30 nm or less.

Micro light-emitting diodes (LED) are distanced from a mirror layer that reflects light emitted by the LEDs to increase the light extraction efficiency of the LEDs. In some embodiments, micro LEDs are electrically coupled to the mirror layer by vias positioned at an end of the LED positioned proximate to the mirror layer. In other embodiments, a conductive layer is positioned adjacent to an electrode of multiple micro LEDs and a pillar contacts the conductive layer at a location where the conductive layer is not positioned adjacent to a micro LED electrode. Vias and pillars allow the mirror height to be increased relative to structures where micro LEDs extend into a mirror layer. Increasing the mirror height can reduce the amount of destructive interference at a release layer caused by reflections of LED-emitted light by the mirror layer when the release layer is ablated via laser irradiation.

A light-emitting device includes a semiconductor diode structure and a multi-layer reflector (MLR) structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength λ.sub.0 to propagate within the diode structure. The MLR structure is positioned against a back surface of the second semiconductor layer, includes two or more layers of dielectric materials of two or more different refractive indices, reflects incident output light within the diode structure, and is in near-field proximity to the active layer relative to λ.sub.0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The MLR structure can include scattering elements that scatter some laterally propagating output light to propagate perpendicularly.

The disclosure relates to a micro component structure and a manufacturing method thereof, and a transfer method for a light-emitting diode (LED) chip. The micro component structure includes a substrate (300), multiple stacked adhesive layer structures spaced on a first surface (300a) of the substrate (300), and multiple LED chips (20) correspondingly disposed on the multiple stacked adhesive layer structures. Each of the multiple LED chips (20) has two extraction electrodes (21) at a surface facing toward the multiple stacked adhesive layer structures. Each of the multiple stacked adhesive layer structures includes a photolysis adhesive layer (31′) and a pyrolysis adhesive layer (32′) that are stacked. The photolysis adhesive layer (31′) is in contact with the first surface (300a). The pyrolysis adhesive layer (32′) is located between the two extraction electrodes (21) and has a thickness greater than a height of each of the two extraction electrodes (21).