A display device includes pixel electrodes disposed on a substrate, at least one light-emitting element disposed on each of the pixel electrodes, a planarization layer disposed on the pixel electrodes and filling a space between the at least one light-emitting element, and a common electrode disposed on the planarization layer and the at least one light-emitting element. Each of the light-emitting elements is arranged perpendicular to a top face of each of the pixel electrodes, at least one of the pixel electrodes includes a protrusion protruding toward an adjacent one of the pixel electrodes, and the protrusion overlaps the light-emitting element in a plan view.

A display device and a method of fabricating the same is provided. A display device includes first and second pixel circuit units spaced apart from each other, a first pixel electrode on the first pixel circuit unit, a second pixel electrode on the second pixel circuit unit, a first light-emitting element electrically connected to the first pixel electrode, and for emitting first light, a second light-emitting element electrically connected to the second pixel electrode, and for emitting second light, a first pixel connecting electrode between the first pixel electrode and the first light-emitting element, and a second pixel connecting electrode between the second pixel electrode and the second light-emitting element, wherein the first pixel electrode overlaps with the first light-emitting element, and wherein the second pixel electrode does not overlap with the second light-emitting element.

A display device and a method of fabricating the same, the display device including a light-blocking layer disposed on a substrate, a buffer layer disposed on the light-blocking layer, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed on the semiconductor layer, a connection pattern layer and a gate electrode disposed on the gate insulating layer and spaced apart from each other, an interlayer dielectric layer disposed on the connection pattern layer and the gate electrode, a via layer disposed on the interlayer dielectric layer, a first bridge layer and a second bridge layer disposed on the via layer, a pixel electrode disposed on the second bridge layer, and a light-emitting layer disposed on the pixel electrode. An end of the first bridge layer is connected to the light-blocking layer through the connection pattern layer, and another end thereof is connected to the semiconductor layer. The second bridge layer connects the semiconductor layer with the pixel electrode.

A light emitting device has a structure in which a first substrate and a second substrate are stacked. The device includes a plurality of light emitting elements, and a driving circuit configured to drive the plurality of light emitting elements. Part of the driving circuit is arranged in the first substrate, and another part of the driving circuit is arranged in the second substrate.

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter that is less than twice an electron diffusion length of the semiconductor layer. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

Disclosed is a method of facilitating straining of a semiconductor element (331) for semiconductor fabrication. In a described embodiment, the method comprises: providing a base layer (320) with the semiconductor element (331) arranged on a first base portion (321) of the base layer (320), the semiconductor element (331) being subjected to a strain relating to a characteristic of the first base portion (321); and adjusting the characteristic of the first base portion (321) to facilitate straining of the semiconductor element (331).

A circuit board with improved heat dissipation function and a method for manufacturing the circuit board are provided. The method includes providing a first metal layer defining a first slot; forming a first adhesive layer in the first slot; electroplating copper on each first pillar to form a first heat conducting portion; forming a first insulating layer on the first adhesive layer having the first heat conducting portion, and defining a first blind hole in the first insulating layer; filling the first blind hole with thermoelectric separation metal to form a second heat conducting portion; forming a first wiring layer on the first insulating layer; forming a second insulating layer on the first wiring layer, defining a second blind hole on the second insulating layer; electroplating copper in the second blind hole to form a third heat conducting portion; mounting an electronic component on the second insulating layer.

Photo-emitting and/or photo-receiving diode array device, comprising: a stack of first and second semiconductor layers doped according to different types; first trenches passing through the stack and surrounding a region of the stack wherein several diodes are formed; dielectric portions arranged in the first trenches and covering lateral flanks of said region over the entire thickness of the second layer and a first part of the thickness of the first layer; first electrically conductive portions arranged in the first trenches and covering the lateral flanks of said region over a second part of the thickness of the first layer, and forming first electrodes of the diodes of said region; at least one second trench partially passing through the first layer and separating the portions of the first layer from the diodes of said region.

A preparation method of a display panel includes: forming multiple compensation groups on a substrate to obtain an array substrate, where the multiple compensation groups include at least first compensation group and second compensation group, and brightness difference of light-emitting elements of same light-emitting color in the first compensation group and the second compensation group under a same gray scale is larger than a preset value; calculating thicknesses of first color film layer, second color film layer and third color film layer corresponding to each of the multiple compensation groups respectively; forming the first color film layer, the second color film layer and the third color film layer on light-emitting side of the first light-emitting element, the second light-emitting element, and the third light-emitting element respectively according to the thicknesses of the first color film layer, the second color film layer and the third color film layer obtained by calculation.

A method for manufacturing a light emitting module includes: providing a light source including a first surface having a pair of electrodes, and a second surface; providing a light guide plate including a first main surface and a second main surface, the light guide plate defining a through-hole extending through the light guide plate from the first main surface to the second main surface, the through-hole having a first penetration portion disposed on a first main surface side, a second penetration portion disposed on a second main surface side, and an intermediate penetration portion connecting the first penetration portion and the second penetration portion, the intermediate penetration portion being narrower in width than the second surface of the light source; and disposing the light source in the second penetration portion of the light guide plate with a joining member being interposed between the light source and the light guide plate.