The Invention relates to a housing for an optoelectronic semiconductor component, comprising: a housing main body, which has a chip mounting side, at least two electrical conducting structures in and/or on the housing main body, and a plurality of drainage structures on the chip mounting side. The electrical conducting structures form, on the chip mounting side, electrical contact surfaces for at least one optoelectronic semiconductor chip and the drainage structure are designed as means for feeding a liquid potting material to the electrical contact surfaces.

A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength; and a floating reflection layer disposed over the first LED stack, in which the first peak wavelength is longer than the second and third peak wavelengths, the first LED stack has a roughened surface to increase the luminous intensity of the light generated in the first LED stack entering the second LED stack, and the floating reflection layer has a high reflectance of 80% or more over light having the first peak wavelength.

According to the present specification, provided is a micro LED display device. The micro LED display device includes a substrate, a supply voltage line on the substrate, and a micro LED area disposed on the supply voltage line. At least one portion of the supply voltage line is disposed at the vertical lower part of the micro LED area.

A display device includes transistors disposed on a substrate, a first protective layer covering the transistors, conductive patterns disposed on the first protective layer, a second protective layer disposed on the conductive patterns, first and second electrodes disposed on the second protective layer, at least one light emitting disposed between the first and second electrodes, and a first contact electrode disposed on the first electrode and contacting an end of at least one light emitting element, and a second contact electrode disposed on the second electrode and contacting another end of the at least one light emitting element. The conductive patterns include first and second conductive patterns respectively overlapping the first and second electrodes. The first electrode is connected to the first conductive pattern. The second protective layer includes an opening hole exposing a portion of the second conductive pattern.

An electronic device is provided. The electronic device includes a display panel and at least one optical sensor. The display panel is disposed in an internal space of a housing so as to be visible from the outside and includes a display region and a sensor region. The at least one optical sensor may correspond, below the display panel, to the sensor region. The display panel includes a plurality of pixels disposed on a substrate, a plurality of driving circuit units for driving the plurality of pixels, a first encapsulation unit for encapsulating the sensor region, and a second encapsulation unit for encapsulating the display region. The first encapsulation unit and the second encapsulation unit may be different in terms of the stacked structure of layers.

The application discloses a bonding method, a display backplane and a system for manufacturing the display backplane. The method includes: providing a substrate, and forming a plurality of first metal bumps on the substrate; providing a transfer device to transfer the plurality of the first metal bumps to a TFT substrate to form a plurality of pairs of metal pads on the TFT substrate, wherein each pair of the metal pads include two of the first metal bumps; and providing a plurality of LED flip chips, and transferring the plurality of LED flip chips to the TFT substrate by using the transfer device to bond electrodes of each of the LED flip chips to one pair of the metal pads respectively.

A light-emitting diode (LED) epitaxial structure, an LED device, and a manufacturing method of an LED epitaxial structure are provided. The LED epitaxial structure 100 includes an n-type confinement layer 20, an n-type waveguide layer 30, a light-emitting layer 40, a p-type waveguide layer 50, and a p-type confinement layer 60 that are sequentially stacked. The p-type waveguide layer 50 includes a first p-type waveguide sub-layer 51, an electron blocking layer 52, and a second p-type waveguide sub-layer 53 that are sequentially stacked, where the first p-type waveguide sub-layer 51 is disposed closer to the light-emitting layer 40 than the second p-type waveguide sub-layer 53, and the electron blocking layer 52 includes at least one oxide layer of aluminum.sub.ygallium.sub.1-yarsenide (Al.sub.yGa.sub.1-yAs) 521.

The present disclosure relates to an epitaxial wafer and a preparing method thereof, and a light-emitting device. The epitaxial wafer includes a substrate and an epitaxial stack, the epitaxial stack is disposed on the substrate, and the epitaxial stack includes a first epitaxial structure, a conductive adhesive layer, and a second epitaxial structure which are sequentially stacked in a direction parallel to an extension direction of the substrate. The first epitaxial structure is adhesively fixed to the second epitaxial structure through the conductive adhesive layer. The first epitaxial structure includes a first N-type semiconductor layer, a first active layer, and a first P-type semiconductor layer. The second epitaxial structure includes a second N-type semiconductor layer, a second active layer, and a second P-type semiconductor layer.

A display device includes light-emitting elements arranged on a circuit board, and extending in a thickness direction of the circuit board, wherein the light-emitting elements include a first light-emitting element configured to emit a first light, and a second light-emitting element configured to emit a second light, wherein the first light-emitting element and the second light-emitting element are on different layers, and wherein a width of the first light-emitting element is greater than a width of the second light-emitting element.

A display panel includes a display area which includes a center area and a corner area arranged at a corner of the display panel, where a plurality of pixels is arranged in the corner area, and a non-display area arranged outside the display area. The corner area includes a central corner area including a plurality of extension areas each extending in a direction away from the center area and at least partially separated from each other, a first adjacent corner area adjacent to the central corner area, and a second adjacent corner area spaced apart from the first adjacent corner area with the central corner area therebetween, and the non-display area includes a bypass area extending from the first adjacent corner area to the second adjacent corner area to at least partially surround the central corner area.