A method for making a device. The method comprises forming a buffer layer on a substrate; forming a periodically doped layer on the buffer layer; forming one or more wires on the periodically doped layer, the wires being chosen from nanowires and microwires; and introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR). Various devices that can be made by the method are also disclosed.

A color display device includes a matrix of light sources, each light source comprising a single micro-light-emitting diode, the light sources being of three different colors, each color pixel of the matrix comprising three sources emitting in the three different colors. In the device, the matrix is formed by a group of elementary components of identical shape, each elementary component comprising at least two light-emitting diodes emitting in one of the three spectral bands—the shape of the light-emitting diodes being either a triangle, or a quadrilateral, or a pentagon—the elementary components being assembled in threes such that their respective diodes touch one another by one of their sides, the group formed by the three sources associated with the three diodes forming a color pixel.

Proposed is a method for manufacturing a micro LED display, the method including a step of preparing a plurality of first substrates having a plurality of micro LEDs, respectively, a step of preparing a plurality of second substrates, a segmented region formation step of segmenting each of the first substrates into a plurality of regions, and a step of transferring micro LEDs of one segmented region of each of the first substrates to an associated one of the second substrates, wherein the one second substrate comprises the micro LEDs of the first substrate.

A display substrate includes a base; and a first display region and a second display region disposed on the base, where a light transmittance of the first display region is greater than a light transmittance of the second display region, and the first display region includes one or more first sub-regions and one or more second sub-regions; where the one or more first sub-regions include a plurality of first sub-pixels, and each of the first sub-pixels includes a first electrode disposed on the base, a light emitting layer disposed on the first electrode, and a second electrode disposed on the light emitting layer. A display panel, a display device and a method of manufacturing a display substrate are further disclosed.

A quantum device includes a substrate including a first material and including an upper surface thereof, a first layer comprising a compound of the first material disposed on the upper surface of the substrate, a second layer, comprising a metal oxide, disposed on the first layer, a third layer, comprising a noble metal, disposed on the second layer, a fourth layer, comprising a metal oxide, disposed on the third layer, a fifth layer, comprising a piezoelectric material, disposed on the fourth layer, a sixth layer, comprising a noble metal, disposed on the fifth layer, a seventh layer, comprising a material capable of quantum emission, disposed on the sixth layer, and an eighth layer, comprising a noble metal, disposed on the seventh layer, and at least one of the eighth layer and the seventh layer are sized to enable quantum emission from the seventh layer.

An epitaxial wafer of a light-emitting chip, a method for manufacturing an epitaxial wafer, and a light-emitting chip are provided. A light-emitting layer (5) of an active region of the epitaxial wafer of the light-emitting chip includes at least one superlattice (51), and each superlattice includes: a quantum well sub-layer (511) and a stress conversion sub-layer (512) which is formed on the quantum well sub-layer (511) and enables the quantum well sub-layer (511) to be converted from compressive strain to tensile strain, and the stress conversion sub-layer (512) and the quantum well sub-layer (511) form a two-dimensional electron gas.

A method and device for automatic film expansion and a storage medium are provided. The method includes the following. Perform overall stretching on an expanded film. An interval between each two adjacent LED wafers on the expanded film is monitored in real time. When an interval between two adjacent LED wafers on the expanded film is greater than or equal to a preset target interval, stop performing overall stretching, and search the expanded film for a local region where an absolute difference between an interval between two adjacent LED wafers and the preset target interval is greater than a preset error threshold. When the local region exists on the expanded film, perform local stretching on the local region until an absolute difference between an interval between each two adjacent LED wafers in the local region and the preset target interval is less than or equal to the preset error threshold.

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.

A lead frame used to produce a chip package includes a first lead frame section and a second lead frame section connected to one another by a bar, wherein the bar includes a first longitudinal section, a second longitudinal section and a third longitudinal section, the first longitudinal section adjoins the first lead frame section and the third longitudinal section adjoins the second lead frame section, the first longitudinal section and the third longitudinal section are oriented parallel to one another, the first longitudinal section and the second longitudinal section form an angle not equal to 180° and not equal to 90°, and the lead frame is planar.