When a power semiconductor device is energized, heat generated from upper-side power semiconductor chips mounted on a P-potential electrode transfers to a first heat mass portion and a second heat mass portion, and heat generated from lower-side power semiconductor chips mounted on a intermediate potential electrode transfers to a resistor. A lead frame, the power semiconductor chip, an inner lead and the resistor are placed in symmetry with respect to a centerline, which can reduce the difference among the temperature increases of the power semiconductor chips when energized. In this way, transient temperature increase of the power semiconductor chip can be suppressed without adding a new member, such as a heat diffusion plate.

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure for optically coupling a fiber includes a photonic die, an electronic die disposed on and electrically coupled to the photonic die, and an insulating layer disposed on the photonic die and extending along sidewalls of the electronic die. The photonic die includes a first portion and a second portion connected to the first portion, an optical device of the photonic die optically coupled to the fiber is within the first portion, and the second portion extends beyond lateral extents of the first portion.

A semiconductor structure includes an encapsulated die including an electronic die and an insulating layer laterally covering the electronic die, and a photonic die coupled to the encapsulated die. The photonic die includes an optical device in proximity to an edge coupling facet of a portion of a sidewall of the photonic die, wherein a surface roughness of the edge coupling facet is less than a surface roughness of a sidewall of the insulating layer or a surface roughness of another portion of the sidewall of the photonic die.

A semiconductor structure and manufacturing method thereof are provided. The semiconductor structure includes a metallization structure with a top surface. A conductive pad is over the top surface. An upper passivation layer is over the top surface and the conductive pad and includes a first implanted region. A polymer layer is over the upper passivation layer and the conductive pad. A conductive via penetrates through the upper passivation layer and the polymer layer, and electrically coupled to the conductive pad. A method for manufacturing a semiconductor structure is also provided.

An injection mould and an injection moulding method are provided. The injection mould includes a base plate used to place a packaged chip to be injection moulded including a substrate and at least one of the chips fixed on the front substrate by a flip chip process. The substrate has a gas hole. Two or more gas ducts that extend in at least two intersected directions and connect with one another are formed in the base plate. Two ends of each one of gas ducts are open, and at least one of the gas ducts is buried into the base plate. Each one of gas ducts is provided with a gas outlet. When the packaged chip is placed on the base plate, the gas outlet connects with the gas hole of the substrate.

A semiconductor structure includes an encapsulated die including an electronic die and an insulating layer laterally covering the electronic die, and a photonic die coupled to the encapsulated die. The photonic die includes an optical device in proximity to an edge coupling facet of the photonic die. In a top-down view, a boundary of the electronic die is within a boundary of the insulating layer, and the boundary of the insulating layer is within a boundary of the photonic die.

A semiconductor structure includes an encapsulated die including an electronic die and an insulating layer laterally covering the electronic die, and a photonic die coupled to the encapsulated die. The photonic die includes an optical device in proximity to an edge coupling facet of a portion of a sidewall of the photonic die, wherein a surface roughness of the edge coupling facet is less than a surface roughness of a sidewall of the insulating layer or a surface roughness of another portion of the sidewall of the photonic die.

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure for optically coupling a fiber includes a photonic die, an electronic die disposed on and electrically coupled to the photonic die, and an insulating layer disposed on the photonic die and extending along sidewalls of the electronic die. The photonic die includes a first portion and a second portion connected to the first portion, an optical device of the photonic die optically coupled to the fiber is within the first portion, and the second portion extends beyond lateral extents of the first portion.

An example apparatus includes: an integrated circuit including a first surface and terminals; a package including: a housing around the integrated circuit, the housing exposing the first surface; and an electrical interconnect including a second surface and an opening, the second surface electrically coupled to the terminals, the second surface mechanically coupled to the housing, the opening configured to expose the first surface.

The disclosure provides a small photoelectric sensor that can secure a capacity for accommodating optical components and secure sealing properties. The small photoelectric sensor includes a holder in which an opening, an edge that defines the opening, and four fixing parts that are independently provided at four corners of a front surface are formed on the front surface; a cover lens that is provided at a position interposed between the four fixing parts, and is connected to the edge in a region overlapping the edge; and an optical component that is held by the holder and projects or receives light through the opening.