A Field Effect Transistor (FET) structure having: a semiconductor; a first electrode structure; a second electrode structure; and a third electrode structure for controlling a flow of carriers in the semiconductor between the first electrode structure and the second electrode structure; a dielectric structure disposed over the semiconductor and extending horizontally between first electrode structure, the second electrode structure and the third electrode structure; and a fourth electrode passing into the dielectric structure and terminating a predetermined, finite distance above the semiconductor for controlling an electric field in the semiconductor under the fourth electrode structure.

According to the present disclosure, a semiconductor device includes a semiconductor substrate of a first conductivity type, in which a cell region, a ballast resistor region, and a termination region surrounding the ballast resistor region are defined, a first insulating film arranged on a front surface of the semiconductor substrate, having a first opening in the cell region, and having at least one second opening in the ballast resistor region, a second insulating film filled in the at least one second opening, a first impurity layer of a second conductivity type arranged on the front surface of the semiconductor substrate below the first opening, and a second impurity layer of the second conductivity type arranged on the front surface of the semiconductor substrate below the at least one second opening, a conductive film arranged from the front surface of the first opening of the semiconductor substrate to the termination region.

Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is over the semiconductive substrate. The donor-supply layer includes a top surface. A gate structure, a drain, and a source are over the donor-supply layer. A passivation layer covers conformably over the gate structure and the donor-supply layer. A gate electrode is over the gate structure. A field plate is disposed on the passivation layer between the gate electrode and the drain. The field plate includes a bottom edge. The gate electrode having a first edge in proximity to the field plate, the field plate comprising a second edge facing the first edge, a horizontal distance between the first edge and the second edge is in a range of from about 0.05 to about 0.5 micrometers.

Embodiments herein relate to chemical sensors, devices and systems including the same, and related methods. In an embodiment, a medical device is included having a graphene varactor including a graphene layer and a self-assembled monolayer disposed on an outer surface of the graphene layer through non-covalent interactions between the self-assembled monolayer and a -electron system of graphene. The self-assembled monolayer includes one or more pillarenes, substituted pillarenes, calixarenes, substituted calixarenes, peralkylated cyclodextrins, substituted peralkylated cyclodextrins, pyrenes, or substituted pyrenes, or derivatives thereof. Other embodiments are also included herein.

Embodiments of the present disclosure relate to a heating, ventilating, air conditioning, and refrigeration (HVAC&R) system that includes a variable speed drive configured to provide power to a motor that drives a compressor of the HVAC&R system and a silicon carbide transistor of the variable speed drive, where the silicon carbide transistor is configured to adjust a voltage, or a frequency, or both of power flowing through the variable speed drive.

Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is over the semiconductive substrate. The donor-supply layer includes a top surface. A gate structure, a drain, and a source are over the donor-supply layer. A passivation layer covers conformally over the gate structure and the donor-supply layer. A gate electrode is over the gate structure. A field plate is disposed on the passivation layer between the gate electrode and the drain. The field plate includes a bottom edge. The gate electrode having a first edge in proximity to the field plate, the field plate comprising a second edge facing the first edge, a horizontal distance between the first edge and the second edge is in a range of from about 0.05 to about 0.5 micrometers.

A stack including doped semiconductor strips, a one-dimensional array of gate electrode strips, and a dielectric matrix layer is formed over a substrate. A two-dimensional array of openings is formed through the dielectric matrix layer and the one-dimensional array of gate electrode strips. A two-dimensional array of tubular gate electrode portions is formed in the two-dimensional array of openings. Each of the tubular gate electrode portions is formed directly on a respective one of the gate electrode strips. Gate dielectrics are formed on inner sidewalls of the tubular gate electrode portions. Vertical semiconductor channels are formed within each of the gate dielectrics by deposition of a semiconductor material. A two-dimensional array of vertical field effect transistors including surrounding gate electrodes is formed.

Embodiments of the present disclosure relate to a heating, ventilating, air conditioning, and refrigeration (HVAC&R) system that includes a variable speed drive configured to provide power to a motor that drives a compressor of the HVAC&R system and a silicon carbide transistor of the variable speed drive, where the silicon carbide transistor is configured to adjust a voltage, or a frequency, or both of power flowing through the variable speed drive.

Chemical sensors, devices and systems including the same, and related methods are disclosed. In an embodiment, a medical device is included having a graphene varactor including a graphene layer and a self-assembled monolayer disposed on an outer surface of the graphene layer through non-covalent interactions between the self-assembled monolayer and a -electron system of graphene. The self-assembled monolayer includes one or more pillarenes, substituted pillarenes, calixarenes, substituted calixarenes, peralkylated cyclodextrins, substituted peralkylated cyclodextrins, pyrenes, or substituted pyrenes, or derivatives of each. Other embodiments are also included.

A Field Effect Transistor (FET) structure having: a semiconductor; a first electrode structure; a second electrode structure; and a third electrode structure for controlling a flow of carriers in the semiconductor between the first electrode structure and the second electrode structure; a dielectric structure disposed over the semiconductor and extending horizontally between first electrode structure, the second electrode structure and the third electrode structure; and a fourth electrode passing into the dielectric structure and terminating a predetermined, finite distance above the semiconductor for controlling an electric field in the semiconductor under the fourth electrode structure.