An architecture for, and techniques for fabricating, a thermal decoupling device are provided. In some embodiments, thermal decoupling device can be included in a thermally decoupled cryogenic microwave filter. In some embodiments, the thermal decoupling device can comprise a dielectric material and a conductive line. The dielectric material can comprise a first channel that is separated from a second channel by a wall of the dielectric material. The conductive line can comprise a first segment and a second segment that are separated by the wall. The wall can facilitate propagation of a microwave signal between the first segment and the second segment and can reduce heat flow between the first segment and the second segment of the conductive line.

An apparatus includes a signal splitter configured to receive an input signal for transmission and to split the input signal to form two or more sub-signals. The apparatus further includes a first amplifier configured to generate a first amplified sub-signal, a second amplifier configured to generate a second amplified sub-signal, a first launcher coupled to the first amplifier and to a waveguide, and a second launcher coupled to the second amplifier and to the waveguide. The first and second launchers are coupled to the waveguide such that a first radiative signal generated by the first launcher responsive to the first amplified sub-signal and a second radiative signal generated by the second launcher responsive to the second amplified sub-signal are combined in the waveguide to form a transmission signal corresponding to the input signal.

A system that includes: an array of qubits, each qubit of the array of qubits comprising a first electrode corresponding to a first node and a second electrode corresponding to a second node, wherein, for a first qubit in the array of qubits, the first qubit is positioned relative to a second qubit in the array of qubits such that a charge present on the first qubit induces a same charge on each of the first node of the second qubit and the second node of the second qubit, such that coupling between the first qubit and the second qubit is reduced, and wherein none of the nodes share a common ground is disclosed.

A quantum computing transducer having a dense, tunable superconducting metamaterial transmission line (SMTL) spectrum that can resonantly enhance sideband scattering. The resonant enhancement of scattering boosts the scattering rate, and hence also the microwave-to-optical-interface (MOQI) transduction efficiency. Moreover, the integration of mechanical elements with the SMTL to realize the MOQI yields a platform that can be readily interfaced on chip, such as in an integrated circuit, with superconducting-qubit architectures to facilitate the local implementation of two of the essential functionalities required for a quantum repeater, i.e., data egress/ingress and a quantum processing module.

A quantum computing transducer having a dense, tunable superconducting metamaterial transmission line (SMTL) spectrum that can resonantly enhance sideband scattering. The resonant enhancement of scattering boosts the scattering rate, and hence also the microwave-to-optical-interface (MOQI) transduction efficiency. Moreover, the integration of mechanical elements with the SMTL to realize the MOQI yields a platform that can be readily interfaced on chip, such as in an integrated circuit, with superconducting-qubit architectures to facilitate the local implementation of two of the essential functionalities required for a quantum repeater, i.e., data egress/ingress and a quantum processing module.

Disclosed are various embodiments for transmitting energy conveyed in the form of a guided surface-waveguide mode along the surface of a lossy medium such as, e.g., a terrestrial medium by exciting a guided surface waveguide probe.

Disclosed are various embodiments for transmitting energy conveyed in the form of a guided surface-waveguide mode along the surface of a lossy medium such as, e.g., a terrestrial medium by exciting a guided surface waveguide probe.

A window assembly includes a first radio frequency device disposed between a first window substrate and a second window substrate. An embedded coplanar waveguide is disposed between the first window substrate and the second window substrate, and is attached to the first radio frequency device. An exterior coplanar waveguide is disposed adjacent an exterior side surface of the first window substrate, and is disposed opposite the embedded coplanar waveguide for communicating electromagnetic waves therebetween. A printed circuit board is attached to and interconnects the exterior coplanar waveguide and a radio frequency cable connector. The radio frequency cable connector is configured for connection to a second radio frequency device. An adhesive layer bonds the printed circuit board to the exterior side surface of the first window substrate.

A communication apparatus includes a signal line that connects an antenna and a wireless communication module to each other, the signal line having a portion where the signal line is divided in part into sections, with an adjacent portion adjacent to the divided portion of the signal line being greater in line width than a main body portion of the signal line; a first ground pattern disposed to face the main body portion; and a second ground pattern disposed to face the adjacent portion. The distance from the adjacent portion to the second ground pattern is longer than the distance from the main body portion to the first ground pattern. The antenna and the wireless communication module are connected to each other through the signal line and a solder adhered to the adjacent portion.

Embodiments include semiconductor packages and methods of forming the semiconductor packages. A semiconductor package includes a die over a substrate, a first conductive layer over the die, and a conductive cavity antenna over the first conductive layer and substrate. The conductive cavity antenna includes a conductive cavity, a cavity region, and a plurality of interconnects. The conductive cavity is over the first conductive layer and surrounds the cavity region. The semiconductor package also includes a second conductive layer over the conductive cavity antenna, first conductive layer, and substrate. The conductive cavity extends vertically from the first conductive layer to the second conductive layer. The cavity region may be embedded with the conductive cavity, the first conductive layer, and the second conductive layer. The plurality of interconnects may include first, second, and third interconnects. The first interconnects may include through-mold vias (TMVs), through-silicon vias (TSVs), conductive sidewalls, or conductive trenches.