A parallel resonant circuit with excellent distortion and saturation characteristics is provided at low power consumption. A first power-supply voltage is applied to the parallel resonant circuit. In the parallel resonant circuit, a variable resistor includes one or more parallel-connected branches. Each of the branches includes a series circuit of a resistor and a MOS switch. A second power supply supplies power of control signals applied to respective gates of the MOS switches, and supplies back gate voltages to the MOS switches. A power-supply voltage of the second power supply is higher than the first power-supply voltage.

A nonlinear parametric device includes a planar substrate and a millimeter-wave resonator formed from superconductive material deposited on the planar substrate. When the resonator is cooled below a critical temperature, it exhibits nonlinear kinetic inductance that may be used to implement millimeter-wave nonlinear frequency generation and parametric amplification. Millimeter waves may be coupled into, and out of, the nonlinear parametric device with hollow rectangular electromagnetic waveguides. Niobium nitride is an excellent superconductive material for kinetic inductance due to its high intrinsic sheet inductance, a critical temperature that is higher than many other superconductive materials, and relatively low loss at millimeter-wave frequencies.

A nonlinear parametric device includes a planar substrate and a millimeter-wave resonator formed from superconductive material deposited on the planar substrate. When the resonator is cooled below a critical temperature, it exhibits nonlinear kinetic inductance that may be used to implement millimeter-wave nonlinear frequency generation and parametric amplification. Millimeter waves may be coupled into, and out of, the nonlinear parametric device with hollow rectangular electromagnetic waveguides. Niobium nitride is an excellent superconductive material for kinetic inductance due to its high intrinsic sheet inductance, a critical temperature that is higher than many other superconductive materials, and relatively low loss at millimeter-wave frequencies.

A quantum interconnect module includes a quantum memory that has a dual arm interferometer embedded therein. The dual arm interferometer has a first arm within a crystal and a second arm within the crystal. The interferometer is coupled to a photon source. A microwave resonator has a waveguide coupled to a microwave source. The microwave resonator is coupled to the first arm of the quantum memory. The interferometer generates an output based on the microwave source.

A quantum interconnect module includes a quantum memory that has a dual arm interferometer embedded therein. The dual arm interferometer has a first arm within a crystal and a second arm within the crystal. The interferometer is coupled to a photon source. A microwave resonator has a waveguide coupled to a microwave source. The microwave resonator is coupled to the first arm of the quantum memory. The interferometer generates an output based on the microwave source.

An apparatus comprising a resonator structure comprising a first transmission line and first two symmetric ring-shaped stubs with substantially equal width and length, placed substantially in a middle of the first transmission line. The apparatus further comprises a cross-coupling line structure for induction of crosstalk, the cross-coupling line structure comprising a second transmission line and second two symmetric ring-shaped stubs, wherein the second transmission line is coupled to a DC or pulsed voltage source.

An apparatus comprising a resonator structure comprising a first transmission line and first two symmetric ring-shaped stubs with substantially equal width and length, placed substantially in a middle of the first transmission line. The apparatus further comprises a cross-coupling line structure for induction of crosstalk, the cross-coupling line structure comprising a second transmission line and second two symmetric ring-shaped stubs, wherein the second transmission line is coupled to a DC or pulsed voltage source.

A spherical designer electromagnetic surface plasmon open resonator is provided. The open resonator includes a resonator inner core and a resonator outer shell. The resonator inner core is located in an inner center of the resonator outer shell, and the resonator inner core and the resonator outer shell are coaxial. The disclosure provides a device that implements the superscattering function for incident waves in all incident directions and in all polarization directions, and a spherical open resonator is implemented. The scattering cross section of the disclosure can be more than five times greater than that of a metal sphere of the same size, and the operating frequency can be flexibly designed. By utilizing the characteristic that the scattering cross section of the spherical designer electromagnetic surface plasmon resonator is much greater than its own geometric cross section, the electromagnetic super-scattering device can be implemented.

A spherical designer electromagnetic surface plasmon open resonator is provided. The open resonator includes a resonator inner core and a resonator outer shell. The resonator inner core is located in an inner center of the resonator outer shell, and the resonator inner core and the resonator outer shell are coaxial. The disclosure provides a device that implements the superscattering function for incident waves in all incident directions and in all polarization directions, and a spherical open resonator is implemented. The scattering cross section of the disclosure can be more than five times greater than that of a metal sphere of the same size, and the operating frequency can be flexibly designed. By utilizing the characteristic that the scattering cross section of the spherical designer electromagnetic surface plasmon resonator is much greater than its own geometric cross section, the electromagnetic super-scattering device can be implemented.

To provide a wave control medium that can absorb and control wave motion while achieving downsizing and wider bandwidth of a metamaterial and the like. A wave control medium 5 includes a three-dimensional microstructure having a base 2, a spiral part 3, and a matching element 6 disposed between the base 2 and the spiral part 3, in which the three-dimensional microstructure includes a material selected from any one of a metal, a dielectric, a magnetic body, a semiconductor, and a superconductor, or a combination of a plurality of these materials. The wave control medium 5 can absorb the wave motion by having the matching element 6 disposed between the base 2 and the spiral part 3 to moderate a change in the entire impedance value.