A variable capacitance cell includes a hybrid coupler including a first port, a second port, a third port, and a fourth port. A first variable capacitance is connected to the second port. The first variable capacitance includes one or more first variable micro-electromechanical system (MEMS) capacitor. A second variable capacitance is connected to the third port. The second variable capacitance includes one or more second variable MEMS capacitors. Control signals are applied to the first and second variable capacitances to selectively change the capacitances of the first and second variable capacitances, thereby modifying a phase difference between a signal input at the first port and a signal output from the fourth port.

A miniaturized multi-sectioned, directional coupler using a multi-layer MMIC process, the coupler comprising, a monolithic microwave integrated circuit, having a central section with a relatively tight coupling, surrounded by sections of lighter coupling, the relatively tight coupling being comprised of a pair of spiral coupled lines, and the lighter coupling being comprised of meandered edge couple lines with capacitive loading of the lines in several places.

The instant disclosure describes a radiofrequency propagation line including a conducting strip connected to a conducting plane parallel to the plane of the conducting strip, wherein the conducting plane includes a network of nanowires made of an electrically conductive, non-magnetic material extending orthogonally to the plane of the conducting strip, in the direction of said conducting strip.

The instant disclosure describes a radiofrequency propagation line including a conducting strip connected to a conducting plane parallel to the plane of the conducting strip, wherein the conducting plane includes a network of nanowires made of an electrically conductive, non-magnetic material extending orthogonally to the plane of the conducting strip, in the direction of said conducting strip.

A high-frequency transmission line in which the alternating-current resistance is low is provided. A high-frequency transmission line 2 is a high-frequency transmission line 2 to transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a peripheral part 8 of a cross-section that is of the high-frequency transmission line 2 and that is perpendicular to a transmission direction of the alternating-current electric signal.

A PCB includes a PCB body at least including a first metal layer, a second metal layer, and a first ground layer sandwiched therebetween; and a pair of transmission lines including a first transmission line conductor and a second transmission line conductor. The first transmission line conductor is located in the first metal layer which has two straight line sections at its two ends and a curved line section at its middle, the second transmission line conductor has two straight line sections at its two ends which are located in the first metal layer and a cross-via structure at the middle which has a buried trace buried in the second metal layer, and the curved line section and the buried trace are isolated by the first ground layer. Skew effect of the differential transmission circuit is reduced, thereby improving the signal transmission quality and improve signal transmission speed.

An electronically variable analog delay line including at least one segment with an electronically variable inductance. The at least one segment includes a signal path, a ground return path, and a plurality of switches configured to vary the inductance of the segment.

An example apparatus includes: a first metal layer including: a first delay line having a surface area; and a second metal layer including: a second delay line having a surface area overlapping the surface area of the first delay line; and an insulating layer coupled between the first metal layer and the second metal layer.

An example apparatus includes: a first metal layer including: a first delay line having a surface area; and a second metal layer including: a second delay line having a surface area overlapping the surface area of the first delay line; and an insulating layer coupled between the first metal layer and the second metal layer.

In one embodiment, an electromagnetic (EM) energy containment device includes a spherically symmetric resonant dielectric structure having a radial dimension R.sub.0 defined as R.sub.0=3/.Math..sub.0/2 and having first and second regions with different indices of refraction. The spherically symmetric resonant dielectric structure is configured to receive and to contain, for a selectable duration of time, an electromagnetic wave of a wavelength .sub.0, and can find applications in delay circuits for beam steering for example.