Methods and apparatus for a self-supported stripline structure including a center conductor having stubs. Opposing first and second ground planes form a cavity in which the center conductor is located. Opposing first and second lateral structures enclose the cavity sides. A first one of the stubs is connected to the first lateral structure to fix the center conductor in position within the cavity.

The present application describes an apparatus a non-transitory memory having instructions stored thereon and a processor operably coupled to the non-transitory memory configured to execute the instructions. The executed instructions include extracting eigenvalues for a coupling matrix of a target device. The executed instructions also include extracting a first set of eigenvalues for a coupling matrix of a device under tune (DUT). The eigenvalues of the target device may be different than the first set of eigenvalues of the DUT. The executed instructions further include causing a material removal source to be positioned at a first location of the DUT. The executed instructions even further include causing the material removal source to tune the DUT. The executed instructions yet further include measuring a second set of eigenvalues of the DUT. The executed instructions yet even further include observing an iterative convergence of the DUT and the target device.

A method of forming a semiconductor structure is provided. A first inter-level dielectric (ILD) layer is formed overlying a molding layer. The first ILD layer is patterned to form a plurality of first openings. A first lower transmitter electrode and a first lower receiver electrode are formed by depositing a first metal material within the plurality of first openings. A first dielectric waveguide is formed overlying the first ILD layer, the first lower transmitter electrode and the first lower receiver electrode. A second ILD layer is formed overlying the first dielectric waveguide and includes a plurality of second openings. A second lower transmitter electrode and a second lower receiver electrode are formed by depositing a second metal material within the plurality of second openings. A second dielectric waveguide is formed overlying the second ILD layer, the second lower transmitter electrode and the second lower receiver electrode.

A transformer balun fabricated in silicon and including a series of alternating metal layers and dielectric layers that define first and second outer conductors that are part of a coaxial structure. Each dielectric layer includes a plurality of conductive vias extending through the dielectric layer to provide electrical contact between opposing metal layers, where a top metal layer forms a top wall of each outer conductor and a bottom metal layer forms a bottom wall of each outer conductor and the other metal layers and the dielectric layers define sidewalls of the outer conductors. Inner conductors extends down both of the first and second outer conductors and a first output line is electrically coupled to a sidewall of the first outer conductor and a second output line is electrically coupled to a sidewall of the second outer conductor.

A millimeter-wave resonator is produced by drilling a plurality of holes into a piece of metal. Each hole forms an evanescent tube having a lowest cutoff frequency. The holes spatially intersect to form a seamless three-dimensional cavity whose fundamental cavity mode has a resonant frequency that is less than the cutoff frequencies of all the evanescent tubes. Below cutoff, the fundamental cavity mode does not couple to the waveguide modes, and therefore has a high internal Q. Millimeter waves can be coupled into any of the tubes to excite an evanescent mode that couples to the fundamental cavity mode. The tubes also provide spatial and optical access for transporting atoms into the cavity, where they can be trapped while spatially overlapping the fundamental cavity mode. The piece of metal may be superconducting, allowing the resonator to be used in a cryogenic environment for quantum computing and information processing.

A method to design and assemble a connector for the transition between a coaxial cable and a microstrip line involves in connecting a coaxial connector in series with a metallic ring to form a new coaxial connector, wherein the thickness of the metallic ring and the diameter of its through hole are important design parameters to determine the frequency response of the transition. By properly selecting their values and connecting the new coaxial connector to the microstrip line, a resonant response caused by the excitation of the first higher-order mode of the original coaxial connector can be attenuated or even eliminated from the frequency response. Thus, the method improves the insertion loss of the transition at high frequencies, and increases its 1-dB passband. Note that the signal line of the microstrip line is not inserted into the through hole of the metallic ring in the final assembly of the transition.

A coaxial polarizer is provided. The coaxial polarizer includes an outer-conductive tube, an inner-conductive tube positioned within and axially aligned with the outer-conductive tube, and two dielectric bars each having a flat-first surface. The inner-conductive tube has two shallow-cavities on opposing portions of an outer surface of the inner-conductive tube. The shallow-cavities each have at least one planar area having a cavity length parallel to a Z axis and a cavity width, including a minimum width, perpendicular to the Z axis and to a radial direction of the inner-conductive tube. The flat-first surface has a dielectric length and width that are parallel and perpendicular to the Z axis, respectively. The dielectric length and dielectric width are less than the cavity length and the minimum width, respectively. The two flat-first surfaces of the respective two dielectric bars contact at least a portion of the respective two planar areas of the two shallow-cavities.

A coaxial polarizer is provided. The coaxial polarizer includes an outer-conductive tube, an inner-conductive tube positioned within and axially aligned with the outer-conductive tube, and two dielectric bars each having a flat-first surface. The inner-conductive tube has two shallow-cavities on opposing portions of an outer surface of the inner-conductive tube. The shallow-cavities each have at least one planar area having a cavity length parallel to a Z axis and a cavity width, including a minimum width, perpendicular to the Z axis and to a radial direction of the inner-conductive tube. The flat-first surface has a dielectric length and width that are parallel and perpendicular to the Z axis, respectively. The dielectric length and dielectric width are less than the cavity length and the minimum width, respectively. The two flat-first surfaces of the respective two dielectric bars contact at least a portion of the respective two planar areas of the two shallow-cavities.

Provided is a waveguide connection structure 1 in which two waveguides 10 and 20 respectively formed with waveguide paths 11 and 21 face each other, in which a choke groove 25 having a depth corresponding to a leakage prevention target frequency is provided, at the end face 20a of the waveguide 20, in a band-shaped region whose center is a center of the waveguide path 21, and which is bounded by an inner ellipse and an outer ellipse, the minor radius of the outer ellipse is longer than the minor radius of the inner ellipse by a length corresponding, and the choke groove 25 includes two groove portions 25a and 25b that are in contact with the inner ellipse and the outer ellipse and are located on the longer side of the rectangle, in the band-shaped region.

Disclosed are non-linear transmission lines using ferromagnetic materials to generate ferromagnetic resonance oscillations. In one aspect, a non-linear transmission line apparatus is disclosed. The apparatus includes an outer conductor having a first side and a second internally facing side, and an inner conductor positioned internal to the non-linear transmission line apparatus. The apparatus further includes a ferromagnetic material surrounding the inner conductor, wherein the ferromagnetic material comprises nanoparticles of an ε-polymorph of iron oxide expressed as ε—Fe.sub.2O.sub.3. The apparatus also includes a first dielectric material positioned between the outer conductor and the inner conductor, the dielectric material in contact with both the ferromagnetic material and with the second internally facing side of the outer conductor, wherein the outer conductor, the inner conductor, the dielectric material and the ferromagnetic material form the nonlinear transmission line.