H01S1/00

High power broadband terahertz emitter with enhanced stability and beam polarity

Systems and methods are provided for enhancing the terahertz power output of a terahertz beam while increasing its stability and its beam polarity by implementing a pair of pinched ripple electrodes and a small flat section in the middle of each electrode. By using tight control over the design parameters and by exploiting the plasmonic effect and the superradiance effect, systems and methods according to embodiments of the present disclosure can achieve a dramatic improvement in the terahertz output power and beam quality as well as the beam stability.

ELECTROMAGNETIC RADIATION OF NANOMETER RANGE GENERATING DEVICE
20210057863 · 2021-02-25 · ·

The invention relates to the field of quantum radio physics and is the solid-state quantum generator of nanometer range electromagnetic radiation. It may be widely used in engineering, nanotechnology, physics, biology, chemistry and medicine. The claimed device comprises at least two electric power adjustment devices, at least one phase shifting device, at least one electromagnetic wave emitter, at least two exciting inductors and an excited inductor. It is configured to adjust electrical power in the first and second exciting inductors, allowing to receive electrical signals with equal amplitudes in them.

FOURIER DOMAIN MODE-LOCKED OPTOELECTRONIC OSCILLATOR
20210066875 · 2021-03-04 ·

A Fourier domain mode-locked optoelectronic oscillator includes a laser light source, a phase modulator, an optical notch filter, a photodetector, an electrical amplifier and a power divider; wherein the laser light source, the phase modulator, the optical notch filter and the photodetector together form a swept microwave photonic filter. The passband of the swept microwave photonic filter is determined by the difference in wavelength corresponding to the laser light source and the notch positions of the optical notch filter. In the present disclosure, the laser light source, the phase modulator, the optical notch filter, and the photodetector are configured to form a fast swept microwave photonic filter, the sweeping of a passband of the microwave photonic filter is realized by the sweeping of the laser light source or the optical notch filter, and the change in the filter's passband is matched with the latency for delivering a signal in the optoelectronic oscillator loop for one trip. As such, Fourier domain mode locking is realized, and a broadband adjustable chirped microwave signal can be output.

THIN FILM MASER EMITTER AND THIN PANEL PHASED ARRAY OF EMITTERS
20210218213 · 2021-07-15 · ·

A MASER (Microwave Amplified Stimulated Emission of Radiation) emitter is fabricated of thin film components, including a thin film of nitrogen-implanted, epitaxial crystal diamond. The MASER elements can also include a controllable Q-switching layer and be arranged in a thin panel, phased array to generate a single beam of coherent, mode-locked, continuous wave MASER radiation.

ROOM-TEMPERATURE SEMICONDUCTOR MASER AND APPLICATIONS THEREOF

A room-temperature semiconductor maser, including a first matching network, a second matching network, a heterojunction-containing transistor, and a resonant network. The output end of the first matching network is connected to the drain of the heterojunction-containing transistor. The input end of the second matching network is connected to the source of the heterojunction-containing transistor. The gate of the heterojunction-containing transistor is connected to the resonant network. The pumped microwaves are fed into the input end of the first matching network.

ROOM-TEMPERATURE SEMICONDUCTOR MASER AND APPLICATIONS THEREOF

A room-temperature semiconductor maser, including a first matching network, a second matching network, a heterojunction-containing transistor, and a resonant network. The output end of the first matching network is connected to the drain of the heterojunction-containing transistor. The input end of the second matching network is connected to the source of the heterojunction-containing transistor. The gate of the heterojunction-containing transistor is connected to the resonant network. The pumped microwaves are fed into the input end of the first matching network.

Laser frequency chirping structures, methods, and applications

Aspects of the present disclosure describe systems, methods, and structures including integrated laser systems that employ external chirping structures that may advantageously include phase shifters and/or one or more filters. Further aspects of the present disclosure describe systems, methods, and structures including laser systems that employ external chirping structures that may advantageously include optical phased arrays.

Bacteria Removal Laser
20200101315 · 2020-04-02 ·

A bacteria removal laser is provided, especially for removing caries bacteria from natural or prosthetic teeth, the prosthetic teeth also being treated via extraoral approach, having a gripping handle, a laser radiation source, an application optics having a predetermined radiation exit surface, especially a radiation guide rod through which laser radiation passes, and an energy source such as a mains connection or an accumulator. The laser emits in the wavelength range between 2200 nm and 4000 nm and is especially designed as an Er:YAG laser. The energy output averaged over time is less than 1 mJ/mm.sup.2 at the radiation exit surface.

Bacteria Removal Laser
20200101315 · 2020-04-02 ·

A bacteria removal laser is provided, especially for removing caries bacteria from natural or prosthetic teeth, the prosthetic teeth also being treated via extraoral approach, having a gripping handle, a laser radiation source, an application optics having a predetermined radiation exit surface, especially a radiation guide rod through which laser radiation passes, and an energy source such as a mains connection or an accumulator. The laser emits in the wavelength range between 2200 nm and 4000 nm and is especially designed as an Er:YAG laser. The energy output averaged over time is less than 1 mJ/mm.sup.2 at the radiation exit surface.

Electronic glasses that provide binaural sound
10587973 · 2020-03-10 ·

A method provides a voice in binaural sound to a user. The method includes designating a sound localization point (SLP) with a handheld portable electronic device (HPED) and tracking the SLP with electronic glasses worn on a head of the user. A processor processes the voice with head-related transfer functions (HRTFs) to generate the voice in the binaural sound that localizes at the SLP at a location in empty space at physical object.