A laser-based light source includes a laser device configured to generate laser light of a predetermined laser wavelength and emit this laser light as a laser beam. A light-conversion device is configured to convert at least part of the laser light into converted light and a laser-output sensor is configured to determine a laser-output signal proportional to the output of laser light emitted by the laser device. Further, a converted-light sensor is configured to determine a converted-light signal proportional to the output of converted light emitted by the light-conversion device. A controller is configured to receive the laser-output signal and the converted-light signal, to determine a safe-to-operate parameter, based on the laser-output signal and the converted-light signal, and to control the operation of the laser-based light source based on a comparison of the safe-to-operate parameter with a at least one predefined threshold.

An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.

An optoelectronic component and a method for manufacturing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a diffractive optical element comprising at least one conversion material and a light source configured to emit primary radiation, wherein the conversion material is encapsulated in the diffractive optical element, and wherein the conversion material is arranged in a beam path of the primary radiation and is configured to convert the primary radiation at least partially into secondary radiation.

A disclosed semiconductor laser module includes a semiconductor laser device; a semiconductor optical amplifier configured to receive laser light emitted from the semiconductor laser device and amplify the laser light that has been received; and a first light receiving device that measures an intensity of a part of the laser light emitted from the semiconductor laser device, for monitoring a wavelength of the laser light, wherein the semiconductor optical amplifier is located rearward in relation to a light receiving surface of the first light receiving device along a propagation direction of the laser light emitted from the semiconductor device.

A symmetric distributed feedback (DFB) laser that is integrated in a silicon based photonic integrated circuit can output light from both sides of the symmetric DFB laser onto waveguides. The light in the waveguides can be phase adjusted and combined using an optical coupler. The symmetric DFB laser can generate light and symmetrically output light onto different lanes of a multi-lane transmitter.

A manipulator device such as a robot arm that is capable of increasing manufacturing throughput for additively manufactured parts, and allows for the manipulation of parts that would be difficult or impossible for a human to move is described. The manipulator can grasp various permanent or temporary additively manufactured manipulation points on a part to enable repositioning or maneuvering of the part.

A light emitting device includes: a base comprising a first wiring, a second wiring, and a third wiring; a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base; a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base; and a base cap fixed to the base such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap. The first semiconductor laser element and the second semiconductor laser element are connected in series. A portion of each of the first, second, and third wirings is exposed at the upper surface of the base at locations outside of the space defined by the base and the base cap.

Provided are a structured light projector that generates and projects structured light, and an electronic apparatus including the structured light projector. The structured light projector includes an illuminator configured to emit light, a pattern mask configured to form structured light by partially transmitting and partially blocking incident light from the illuminator based on a pattern of the pattern mask, and a lens configured to project the structured light. The illuminator includes a plurality of illumination areas respectively facing a plurality of areas of the pattern mask, wherein intensities of lights respectively emitted by the plurality of illumination areas are different from one other.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

In a method of manufacturing surface-emitting lasers, a substrate having a major surface including a plurality of areas each provided with a plurality of surface-emitting lasers is prepared. A first laser beam emitted when a direct-current voltage is applied to each of an n number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, n being an integer of 2 or greater. A second laser beam emitted when an alternating-current voltage is applied to each of an m number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, m being a natural number smaller than n. Whether the n number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the first laser beam. Whether the m number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the second laser beam.