An electric component with a fail safe element is disclosed. In an embodiment a component includes a functional element and a fail safe element electrically interconnected therewith, wherein the fail safe element is configured to ensure a minimum resistance or a minimum conductivity of the component in the event of a failure of the functional element.

A system including a vehicle having a motive electrical power path, a power distribution unit comprising a current protection circuit disposed in the motive electrical power path, the current protection circuit comprising a thermal fuse and a contactor in a series arrangement with the thermal fuse. The system further including a current source circuit electrically coupled to the thermal fuse and structured to inject a current across the thermal fuse, a hardware filter electrically coupled to the thermal fuse, the hardware filter comprising a cutoff frequency determined in response to an injection frequency of the current source circuit, and sa voltage determination circuit electrically coupled to the thermal fuse and structured to determine an injected voltage amount in response to the filtered injected current.

A system including a vehicle having a motive electrical power path, a power distribution unit comprising a current protection circuit disposed in the motive electrical power path, the current protection circuit comprising a thermal fuse and a contactor in a series arrangement with the thermal fuse. The system further including a current source circuit electrically coupled to the thermal fuse and structured to inject a current across the thermal fuse, a hardware filter electrically coupled to the thermal fuse, the hardware filter comprising a cutoff frequency determined in response to an injection frequency of the current source circuit, and sa voltage determination circuit electrically coupled to the thermal fuse and structured to determine an injected voltage amount in response to the filtered injected current.

A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

An electronic circuit includes a diode configured to carry a surge current generated by switching of a first transistor, a capacitor connected between a cathode of the diode and a control electrode of the first transistor, and a first variable impedance circuit configured to vary an impedance between the control electrode of the first transistor and a first reference voltage node according to the surge current flowing to the diode.

Disclosed is a leakage current measuring device for a grid protection system protecting a power distribution or transmission grid from damage in case of a power surge, the grid protection system including a disconnector device and a surge arrester connected in series along a grounding path, the grounding path connecting a phase of a power distribution or transmission grid through the surge arrester and the disconnector device to ground, the disconnector device being configured for being activated in case of an overload condition, thereby disconnecting the surge arrester. The leakage current measuring device includes a leakage current sensor for measuring a leakage current I.sub.L flowing along the grounding path, the leakage current I.sub.L being indicative of the electrical connection status of the disconnector device. The electrical connection status is one of an activated and an inactivated status of the disconnector device.

An electronic component includes first and second separate semiconductor regions. A third semiconductor region is arranged under and between the first and second semiconductor regions. The first and third semiconductor regions define electrodes of a first diode. The second and third semiconductor regions define electrodes of a second diode. The first diode is an avalanche diode.

An LC resonance element (10) includes a dielectric film (12), a common electrode (11) formed of a thin-film conductor on a lower surface (12D) of the dielectric film, a first capacitor (C1) and a second capacitor (C2) that are connected in series via the common electrode (11) and constitute a thin-film capacitor (TC), first and second external connection terminals (14A, 14B) formed on an upper surface (12U) of the dielectric film, a thin-film conductive wire (16) constituting a thin-film inductor (TL), a first upper electrode (13A) of the first capacitor formed on the upper surface (12U), and a second upper electrode (13B) of the second capacitor formed on the upper surface (12U). The thin-film conductive wire (16) is formed in a region (R2) located on the upper surface (12U) of the dielectric film and outside the common electrode (11) in plan view.

A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

A high frequency data recorder (“HFDR”) can include a first set of contacts, on a first side of the HFDR, that are pluggable into a first meter receptacle of a meter box, wherein the first meter receptacle provides a connection to a power supply and a connection to a load. The HFDR also includes a second set of contacts, on a second side of the HFDR, that form a second meter receptacle. The second meter receptacle provides another connection to the power supply and another connection to the load. The HFDR can further include a processor that accesses a non-transitory machine readable memory that stores instruction that when executed cause the processor to passively measures current downstream from the meter box. The HFDR still further includes a wireless transceiver that wirelessly transmits data characterizing the measured current.