A manufacturing method and application for an quantum superconductor rectifier, wherein the quantum superconductor rectifier comprises: a carrier in a definite shape; wherein atomic nuclei in components of said carrier are excited to vibration by a strong magnetic field, thus when the cumulative atomic nuclei in components of said carrier transmit nuclear spectra, energy is quantized and a signal from nuclear magnetic resonance results as a strong cutting line, wherein overloaded conductive molecules in a current loop are cut and separated and wherein the Van der Waals forces between the molecules are broken. Thereby interference by electrical resistance is reduced and more effectiveness is achieved.

A system is disclosed for restoring a surface field potential of an electret material. An oscillator generates an oscillating output, and a power amplifier amplifies the oscillating output. A step-up transformer generates a high voltage alternating current output from the amplified oscillating output, and a polarity controller generates one of a positive pulsating output and a negative pulsating output from the high voltage alternating current output.

A system is disclosed for restoring a surface field potential of an electret material. An oscillator generates an oscillating output, and a power amplifier amplifies the oscillating output. A step-up transformer generates a high voltage alternating current output from the amplified oscillating output, and a polarity controller generates one of a positive pulsating output and a negative pulsating output from the high voltage alternating current output.

A tunable tunnel diode based digitized noise source includes a digitized noise source for producing a sequence of random digital signals. The digitized noise source includes a tunnel diode for providing a current signal that includes quantum shot noise. The digitized noise source can also include a current-to-voltage converter coupled to the tunnel diode for converting the current signal to a voltage signal, a filtering and amplification circuit coupled to the current-to-voltage converter for producing an amplified voltage signal, and a digitization circuit for converting the amplified voltage signal into the sequence of digital signals that represents random bits. The tunable tunnel diode based digitized noise source further includes an entropy estimator coupled to the output of the digitization circuit for estimating an entropy of the sequence of digital signals and for providing a feedback bias voltage to the tunnel diode.

A tunable tunnel diode based digitized noise source includes a digitized noise source for producing a sequence of random digital signals. The digitized noise source includes a tunnel diode for providing a current signal that includes quantum shot noise. The digitized noise source can also include a current-to-voltage converter coupled to the tunnel diode for converting the current signal to a voltage signal, a filtering and amplification circuit coupled to the current-to-voltage converter for producing an amplified voltage signal, and a digitization circuit for converting the amplified voltage signal into the sequence of digital signals that represents random bits. The tunable tunnel diode based digitized noise source further includes an entropy estimator coupled to the output of the digitization circuit for estimating an entropy of the sequence of digital signals and for providing a feedback bias voltage to the tunnel diode.

An I-V converting module includes: a current output sensor, an I-V transforming circuit, a sampling and holding circuit, a source follower, a loop switch, and a bypass circuit. A drain of the source follower is connected to an input/output end of the sampling and holding circuit. A source of the source follower is connected to an input end of the I-V transforming circuit and an output end of the current output sensor, and a gate of the source follower is connected to an output end of the I-V transforming circuit via the loop switch, and to the bypass circuit. When the loop switch is closed and the bypass circuit is disabled, a feedback loop formed by the source follower, the I-V transforming circuit and the loop switch is conducted, and the I-V converting module enters into a sampling setup stage.

An I-V converting module includes: a current output sensor, an I-V transforming circuit, a sampling and holding circuit, a source follower, a loop switch, and a bypass circuit. A drain of the source follower is connected to an input/output end of the sampling and holding circuit. A source of the source follower is connected to an input end of the I-V transforming circuit and an output end of the current output sensor, and a gate of the source follower is connected to an output end of the I-V transforming circuit via the loop switch, and to the bypass circuit. When the loop switch is closed and the bypass circuit is disabled, a feedback loop formed by the source follower, the I-V transforming circuit and the loop switch is conducted, and the I-V converting module enters into a sampling setup stage.

Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (B-TRANs) for switching. Four-terminal three-layer B-TRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. B-TRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. B-TRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (B-TRANs) for switching. Four-terminal three-layer B-TRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. B-TRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. B-TRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

A frequency converter includes: a primary winding 12 in which a plurality of windings on which a polyphase alternating voltage is applied are arranged periodically along a particular direction; a secondary winding 22 which is magnetically coupled to the primary winding 12 and in which a plurality of windings are arranged along the particular direction with a repetition period different from the primary winding 12; and a frequency modulation part 3 which is arranged on a magnetic path between the primary winding 12 and the secondary winding 22 and in which a plurality of magnetic materials 31 are arranged periodically. Then, the pitch of the plurality of magnetic materials 31 and the winding arrangement period of the primary winding 12 and the secondary winding 22 are different from each other so that an alternating voltage having a frequency different from the frequency of the polyphase alternating voltage is induced in the secondary winding 22.