A method may include providing a substrate on a clamp, and directing radiation from an illumination source to the substrate when the substrate is disposed on the clamp during substrate processing, wherein the radiation is characterized by a radiation energy, wherein at least a portion of the radiation energy is equal to or greater than 2.5 eV.

A method may include providing a substrate on a clamp, and directing radiation from an illumination source to the substrate when the substrate is disposed on the clamp during substrate processing, wherein the radiation is characterized by a radiation energy, wherein at least a portion of the radiation energy is equal to or greater than 2.5 eV.

A sample holder of the present disclosure includes an aluminum nitride substrate and an internal electrode provided on the aluminum nitride substrate. The aluminum nitride substrate includes a plurality of aluminum nitride particles and aluminum oxynitride particles located in crystal grain boundaries of the plurality of aluminum nitride particles. Titanium is solid-solved in the aluminum oxynitride particles.

Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck. The methods may further include depositing a seasoning layer on the electrostatic chuck from the deposition precursors to form a seasoned electrostatic chuck. The seasoning layer may be characterized by a dielectric constant greater than or about 3.5. The methods may still further include applying a voltage to the seasoned electrostatic chuck of greater than or about 500 V. The seasoned electrostatic chuck may be characterized by a leakage current of less than or about 25 mA when the voltage is applied.

Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck. The methods may further include depositing a seasoning layer on the electrostatic chuck from the deposition precursors to form a seasoned electrostatic chuck. The seasoning layer may be characterized by a dielectric constant greater than or about 3.5. The methods may still further include applying a voltage to the seasoned electrostatic chuck of greater than or about 500 V. The seasoned electrostatic chuck may be characterized by a leakage current of less than or about 25 mA when the voltage is applied.

A coated chamber component comprises a body and a protective ceramic coating deposited over a surface of the body, the protective ceramic coating being amorphous and comprising about 8-20% by weight yttrium, about 20-32% by weight aluminum, and about 60-70% by weight oxygen.

An electrostatic substrate chuck with substrate backside purging to prevent incidental backside deposition and that provides thermal sinking to prevent or mitigate the failure of seals.

An electrostatic substrate chuck with substrate backside purging to prevent incidental backside deposition and that provides thermal sinking to prevent or mitigate the failure of seals.

A method may include providing a substrate on a clamp, and directing radiation from an illumination source to the substrate when the substrate is disposed on the clamp during substrate processing, wherein the radiation is characterized by a radiation energy, wherein at least a portion of the radiation energy is equal to or greater than 2.5 eV.

An electrostatic chuck fixes a substrate and includes a first area and a second area adjacent to the first area. The electrostatic chuck includes a first electrode portion disposed in the first area and a second electrode portion disposed in the second area. The first electrode portion has a first width, and the second electrode portion has a second width smaller than the first width.