A hinge mechanism includes an electrostatic clutch for providing active control of a relative angle between two planar components. The hinge mechanism includes two conductive components on opposite sides of a dielectric layer; a relative angle detection mechanism usable to determine a relative angle between the two planar components; and a voltage controller that selectively applies voltage to at least one of the two conductive components when the detected angle between the two planar components satisfies a locking condition, the applied voltage creating an electrostatic force that restricts movement of the two conductive components and fixedly support the two planar components at the detected angle of separation.

A hinge mechanism includes an electrostatic clutch for providing active control of a relative angle between two planar components. The hinge mechanism includes two conductive components on opposite sides of a dielectric layer; a relative angle detection mechanism usable to determine a relative angle between the two planar components; and a voltage controller that selectively applies voltage to at least one of the two conductive components when the detected angle between the two planar components satisfies a locking condition, the applied voltage creating an electrostatic force that restricts movement of the two conductive components and fixedly support the two planar components at the detected angle of separation.

An electrostatic chuck device includes: an electrostatic chuck plate having a dielectric substrate having a placement surface on which a wafer is placed and an adsorption electrode positioned in the dielectric substrate; a metal base supporting the electrostatic chuck plate from a back surface side opposite to the placement surface; and a focus ring installed on an outer peripheral portion of the electrostatic chuck plate and surrounding the placement surface. The electrostatic chuck plate has a ring adsorption region which is adsorbed to the focus ring and is located on a surface positioned on the same side as the placement surface and has a base adsorption region which is adsorbed to the metal base and located on a back surface opposite to the placement surface.

A ceramic substrate made of a dielectric material including silicon carbide particles, which is used as a forming material, in which the number of the silicon carbide particles per unit area on the surface of the substrate is smaller than the number of the silicon carbide particles per unit area in a cross section of the substrate.

A ceramic substrate made of a dielectric material including silicon carbide particles, which is used as a forming material, in which the number of the silicon carbide particles per unit area on the surface of the substrate is smaller than the number of the silicon carbide particles per unit area in a cross section of the substrate.

Implementations of the present disclosure provide a process kit for an electrostatic chuck. In one implementation, a substrate support assembly is provided. The substrate support assembly includes an electrostatic chuck having a first recess formed in an upper portion of the electrostatic chuck. A process kit surrounds the electrostatic chuck. The process kit includes an inner ring and an outer ring disposed radially outward of the inner ring. The outer ring includes a second recess formed in an upper portion of the upper ring. The inner ring is positioned within and is supported by the first recess and the second recess. An upper surface of the inner ring and an upper surface of the outer ring are co-planar.

A workpiece holding tool includes a substrate, a base, and a cylindrical member. The base includes a gas flow channel including a first portion and a second portion. The first portion extends parallel to a bonding surface of the base. The second portion forms branch connection with the first portion and extends perpendicularly to the bonding surface to be open in the bonding surface. The cylindrical member includes a cylindrical body portion located along the second portion and a cylindrical extension portion continuous with the body portion and extending to the first portion.

A ceramic joined body (1) includes: a pair of ceramic plates (2,3) that include a conductive material; and a conductive layer (4) and an insulating layer (5) that are interposed between the pair of ceramic plates (2, 3), a porosity at an interface between the pair of ceramic plates (2, 3) and the insulating layer (5) is 4% or less, and a ratio of an average primary particle diameter of an insulating material which forms the insulating layer (5) to an average primary particle diameter of an insulating material which forms the ceramic plates (2, 3) is more than 1.

There is provision of a stage including a base; a substrate mount section provided above an upper surface of the base; an annular member mount section provided above the upper surface of the base, so as to surround a periphery of the substrate mount section; a first bonding layer bonding the base and the substrate mount section; a second bonding layer bonding the base and the annular member mount section; an annular member disposed on the annular member mount section; and a sealing member configured to protect the first bonding layer and the second bonding layer.

There is provision of a stage including a base; a substrate mount section provided above an upper surface of the base; an annular member mount section provided above the upper surface of the base, so as to surround a periphery of the substrate mount section; a first bonding layer bonding the base and the substrate mount section; a second bonding layer bonding the base and the annular member mount section; an annular member disposed on the annular member mount section; and a sealing member configured to protect the first bonding layer and the second bonding layer.