The power supply apparatus for the electrostatic chuck of this invention has: DC power source units for applying DC voltage to electrodes of the electrostatic chuck; and an AC power source unit for causing AC current to flow through an electrostatic capacitance of the electrostatic chuck. Provided that: a circuit for charging an electrode, from DC power source unit, with chuck voltage in order to attract and hold in position the to-be-processed substrate with the electrostatic chuck, be defined as a first circuit and that; a circuit for clearing charges of the to-be-processed substrate be defined as a second circuit, the power supply apparatus further includes switching means for switching between the first circuit and the second circuit. The second circuit is provided with an AC power source unit and a voltmeter for measuring AC voltage.

A variable stiffening device that include a first electrode structure and a second electrode structure. The first electrode structure includes an electrode extension that extends into a cavity defined between an electrode of the first electrode structure and an opposing electrode of the second electrode structure. The first and second electrode structures may be arranged in a load-bearing state by applying a voltage thereto to electrostatically attract the electrode to the opposing electrode to press the electrode extension within the cavity. Friction between the electrode extension and engaging surfaces defining the cavity prevent the electrode extension from slipping within the cavity, thereby maintaining a structural relationship among the components of the first and second electrode structures in response to an application of a load to the variable stiffening device.

Provided is an electrostatic attraction apparatus in which a first insulating layer is formed on a base in an electrostatic chuck. A first portion of the first insulating layer extends on a first face of the base and a second portion of the first insulating layer extends on at least a portion of a second face of the base. An attraction electrode is formed on the first portion of the first insulating layer. A second insulating layer is formed on the first portion of the first insulating layer and the attraction electrode. A conductor pattern extends from the attraction electrode and provides a power supply terminal on the second portion of the first insulating layer. A contact part of a terminal member urged by an urging unit is in contact with the power supply terminal. The terminal member is connected with a wiring line connected to a supply power.

Provided is an electrostatic attraction apparatus in which a first insulating layer is formed on a base in an electrostatic chuck. A first portion of the first insulating layer extends on a first face of the base and a second portion of the first insulating layer extends on at least a portion of a second face of the base. An attraction electrode is formed on the first portion of the first insulating layer. A second insulating layer is formed on the first portion of the first insulating layer and the attraction electrode. A conductor pattern extends from the attraction electrode and provides a power supply terminal on the second portion of the first insulating layer. A contact part of a terminal member urged by an urging unit is in contact with the power supply terminal. The terminal member is connected with a wiring line connected to a supply power.

The present invention provides an electrostatic chuck device capable of increasing the electrostatic adsorptive force for a focus ring and uniformly cooling the focus ring. In an electrostatic chuck device (10) of the present invention, a mounting table (11) has a holder (15) being provided in the periphery of a placing surface (24a) along the circumferential direction of a focus ring (12) and electrostatically adsorbing the focus ring (12), the holder (15) has a pair of banks (16) being provided in the circumferential direction and being for placing the focus ring (12) thereon, and an annular groove (17) formed between these banks, and, in at least a bank (16A) on an outer circumferential position of the focus ring (12) among the pair of the banks (16), a micro-protruding part including a plurality of micro-protrusions is formed on a surface facing the focus ring (12), or convex parts (18) are provided on a bottom (17a) of the groove (17). The convex parts (18) do not come into contact with the focus ring, and the pair of the banks (16) or the plurality of the micro-protrusions comes into contact with the focus ring (12) and electrostatically adsorbs the focus ring (12) in coordination with the convex parts (18).

The present invention provides an electrostatic chuck device capable of increasing the electrostatic adsorptive force for a focus ring and uniformly cooling the focus ring. In an electrostatic chuck device (10) of the present invention, a mounting table (11) has a holder (15) being provided in the periphery of a placing surface (24a) along the circumferential direction of a focus ring (12) and electrostatically adsorbing the focus ring (12), the holder (15) has a pair of banks (16) being provided in the circumferential direction and being for placing the focus ring (12) thereon, and an annular groove (17) formed between these banks, and, in at least a bank (16A) on an outer circumferential position of the focus ring (12) among the pair of the banks (16), a micro-protruding part including a plurality of micro-protrusions is formed on a surface facing the focus ring (12), or convex parts (18) are provided on a bottom (17a) of the groove (17). The convex parts (18) do not come into contact with the focus ring, and the pair of the banks (16) or the plurality of the micro-protrusions comes into contact with the focus ring (12) and electrostatically adsorbs the focus ring (12) in coordination with the convex parts (18).

A wafer placement apparatus includes a disc-shaped ceramic plate having an upper surface as a wafer placement surface and in which an electrode is embedded; a disc-shaped cooling plate provided on a lower surface, opposite the wafer placement surface, of the ceramic plate; and a resin adhesive-sheet layer with which a bonding surface as the lower surface of the ceramic plate and a bonding surface as an upper surface of the cooling plate are bonded to each other, wherein at least one of the bonding surface of the ceramic plate and the bonding surface of the cooling plate has a surface roughness Ra that is higher in an outer part of the bonding surface than in an inner part of the bonding surface.

A wafer placement apparatus includes a disc-shaped ceramic plate having an upper surface as a wafer placement surface and in which an electrode is embedded; a disc-shaped cooling plate provided on a lower surface, opposite the wafer placement surface, of the ceramic plate; and a resin adhesive-sheet layer with which a bonding surface as the lower surface of the ceramic plate and a bonding surface as an upper surface of the cooling plate are bonded to each other, wherein at least one of the bonding surface of the ceramic plate and the bonding surface of the cooling plate has a surface roughness Ra that is higher in an outer part of the bonding surface than in an inner part of the bonding surface.

An electrostatic chuck device 80 includes: an electrostatic chuck section 2 having one principal surface serving as a placing surface on which a plate-shaped sample is placed, and having a built-in electrostatic attracting internal electrode; a first adhesion layer 4; a sheet material 6; a second adhesion layer 8; and a temperature adjusting base section 10 which adjusts a temperature of the electrostatic chuck section 2 to a desired temperature, in this order, in which the first adhesion layer 4 includes a joining layer 14 having a layer thickness in a range of 1 nm to 500 nm, and a silicone adhesive layer 24 having a thickness in a range of 2 μm to 30 μm, and the second adhesion layer 8 includes a joining layer 18 having a layer thickness in a range of 1 nm to 500 nm, and a silicone adhesive layer 28 having a thickness in a range of 2 μm to 30 μm.

An electrostatic chuck device 80 includes: an electrostatic chuck section 2 having one principal surface serving as a placing surface on which a plate-shaped sample is placed, and having a built-in electrostatic attracting internal electrode; a first adhesion layer 4; a sheet material 6; a second adhesion layer 8; and a temperature adjusting base section 10 which adjusts a temperature of the electrostatic chuck section 2 to a desired temperature, in this order, in which the first adhesion layer 4 includes a joining layer 14 having a layer thickness in a range of 1 nm to 500 nm, and a silicone adhesive layer 24 having a thickness in a range of 2 μm to 30 μm, and the second adhesion layer 8 includes a joining layer 18 having a layer thickness in a range of 1 nm to 500 nm, and a silicone adhesive layer 28 having a thickness in a range of 2 μm to 30 μm.