Patent classifications
H03B1/00
Semiconductor device
Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.
Phase noise reduction in voltage controlled oscillators
A voltage controlled oscillator (VCO), a method of designing a voltage controlled oscillator, and a design structure comprising a semiconductor substrate including a voltage controlled oscillator are disclosed. In one embodiment, the VCO comprises an LC tank circuit for generating an oscillator output at an oscillator frequency, and an oscillator core including cross-coupled semiconductor devices to provide feedback to the tank circuit. The VCO further comprises a supply node, a tail node, and a noise by-pass circuit connected to the supply and tail nodes, in parallel with the tank circuit and the oscillator core. The by-pass circuit forms a low-impedance path at a frequency approximately twice the oscillator frequency to at least partially immunize the oscillator core from external noise and to reduce noise contribution from the cross-coupled semiconductor devices.
Phase noise reduction in voltage controlled oscillators
A voltage controlled oscillator (VCO), a method of designing a voltage controlled oscillator, and a design structure comprising a semiconductor substrate including a voltage controlled oscillator are disclosed. In one embodiment, the VCO comprises an LC tank circuit for generating an oscillator output at an oscillator frequency, and an oscillator core including cross-coupled semiconductor devices to provide feedback to the tank circuit. The VCO further comprises a supply node, a tail node, and a noise by-pass circuit connected to the supply and tail nodes, in parallel with the tank circuit and the oscillator core. The by-pass circuit forms a low-impedance path at a frequency approximately twice the oscillator frequency to at least partially immunize the oscillator core from external noise and to reduce noise contribution from the cross-coupled semiconductor devices.
Tunable filter
A tunable filter is provided. The tunable filter includes: a filter input; a filter output; at least one feedback loop coupled between the filter output and the filter input, where the at least one feedback loop includes at least one tunable feedback capacitance which is configured to tune a cut-off frequency of the tunable filter; and an active element, coupled between the filter input and the filter output and configured to drive the at least one tunable feedback capacitance, the active element having a transfer function with a primary pole and at least one secondary pole, where the active element includes a first stabilization element that is coupled to a first internal node of the active element.
Downshift techniques for oscillator with feedback loop
Techniques are disclosed relating to rapidly downshifting the output frequency of an oscillator. In some embodiments, the oscillator is configured to operate in a closed-loop mode in which negative feedback is used to maintain a particular output frequency (e.g., in a phase-locked loop (PLL)). In some embodiments, the negative feedback loop is configured to maintain the output of the oscillator at a particular frequency based on a reference clock signal and the output of the oscillator. The nature of a negative feedback loop may render rapid frequency changes difficult, e.g., because of corrections by the loop. Therefore, in some embodiments, the loop is configured to switch to an open-loop mode in which a control input to the oscillator is fixed. In some embodiments, the loop switches to open-loop mode in response to a trigger signal and control circuitry forces the oscillator to a new target frequency.
Downshift techniques for oscillator with feedback loop
Techniques are disclosed relating to rapidly downshifting the output frequency of an oscillator. In some embodiments, the oscillator is configured to operate in a closed-loop mode in which negative feedback is used to maintain a particular output frequency (e.g., in a phase-locked loop (PLL)). In some embodiments, the negative feedback loop is configured to maintain the output of the oscillator at a particular frequency based on a reference clock signal and the output of the oscillator. The nature of a negative feedback loop may render rapid frequency changes difficult, e.g., because of corrections by the loop. Therefore, in some embodiments, the loop is configured to switch to an open-loop mode in which a control input to the oscillator is fixed. In some embodiments, the loop switches to open-loop mode in response to a trigger signal and control circuitry forces the oscillator to a new target frequency.
PEDESTAL FOR VIBRATION ELEMENT, VIBRATOR, AND OSCILLATOR
A pedestal for a vibration element, a vibrator, and an oscillator are provided, which can improve vibration resistance by suppressing the influence of vibration from the outside and can improve phase noise characteristics. The pedestal includes connection parts 14 connected to a substrate of a package 3 along the long side of a main body, gap parts 10c and 10d formed inside the connection parts 14 along the long side, a mounting part 11 for a crystal piece 2 sandwiched between the gap parts 10c and 10d, and arc-shaped curved arm parts 13 connecting the mounting part 11 and the connection parts 14 at the four corners of the main body. The vibrator and the oscillator each include the pedestal.
PEDESTAL FOR VIBRATION ELEMENT, VIBRATOR, AND OSCILLATOR
A pedestal for a vibration element, a vibrator, and an oscillator are provided, which can improve vibration resistance by suppressing the influence of vibration from the outside and can improve phase noise characteristics. The pedestal includes connection parts 14 connected to a substrate of a package 3 along the long side of a main body, gap parts 10c and 10d formed inside the connection parts 14 along the long side, a mounting part 11 for a crystal piece 2 sandwiched between the gap parts 10c and 10d, and arc-shaped curved arm parts 13 connecting the mounting part 11 and the connection parts 14 at the four corners of the main body. The vibrator and the oscillator each include the pedestal.
Circuit based on a III/V semiconductor and a method of operating the same
An electronic circuit provided with a III/V semiconductor domain, and a method of operating such a circuit is presented. In particular, the present application relates to electronic circuit based on a Gallium Nitride (GaN) semiconductor. GaN components must be controlled in a way that ensures proper operation over a wide variation of GaN parameters. There is a circuit comprising a first domain coupled to a second domain, the first domain being based on a III/V semiconductor; wherein the first domain comprises a first component and a second component. The second component being representative of an electrical characteristic of the first component. The second domain contains a sensor adapted to sense an electrical quantity of the second component and an input generator coupled to the sensor. The input generator is adapted to provide at least one input, based on the electrical quantity, to the first domain.
Transformer-based driver for power switches
Transformer-driven power switch devices are provided for switching high currents. These devices include power switches, such as Gallium Nitride (GaN) transistors. Transformers are used to transfer both control timing and power for controlling the power switches. These transformers may be careless, such that they may be integrated within a silicon die. Rectifiers, pulldown control circuitry, and related are preferably integrated in the same die as a power switch, e.g., in a GaN die, such that a transformer-driven switch device is entirely comprised on a silicon die and a GaN die, and does not necessarily require a (large) cored transformer, auxiliary power supplies, or level shifting circuitry.