Example system and method for providing analytics and data visualization of an attached file in an attachment-enabled application are provided. An analysis system causes presentation of an option to perform analysis on a file attached to main data in an attachment-enabled application. The analysis system receives an indication of a selection of the option to perform the analysis on the attached file, whereby the analysis to be performed without user download of the attached file. The analysis system determines, based on data corresponding to the attached file, one or more data sets on which to perform the analysis and a result type for outputting of a result, and performs analysis on the one or more data sets to generate the result based on the result type. The analysis system causes presentation of the result based on the result type.

Methods of making a semiconductor device packages may involve placing a metal material at least partially around a region of integrated circuitry embedded within an active surface of a semiconductor die, the metal material located on the active surface. At least a portion of the metal material may be left electrically disconnected from the region of integrated circuitry. The semiconductor die and the metal material may be encapsulated in an encapsulant material, the encapsulant material extending to a height above the active surface higher than a maximum height of the metal material above the active surface.

Methods of making a semiconductor device packages may involve placing a metal material at least partially around a region of integrated circuitry embedded within an active surface of a semiconductor die, the metal material located on the active surface. At least a portion of the metal material may be left electrically disconnected from the region of integrated circuitry. The semiconductor die and the metal material may be encapsulated in an encapsulant material, the encapsulant material extending to a height above the active surface higher than a maximum height of the metal material above the active surface.

A digital-to-analog converter (DAC) includes input circuitry to receive a digital word of N bits, and an array of N bit processing units disposed in parallel. Each of the N bit processing units includes first switch circuitry to generate a first output state based on a first value of a received one of the N bits, and second switch circuitry to generate a second output state based on a second value of the received one of the N bits. The DAC also includes selectively enabled third switch circuitry to generate a conditional third output state. A voltage-mode driver includes input circuitry to selectively receive one of N bits of a digital word. First switch circuitry generates a first output state based on a first value of the received one of the N bits. Second switch circuitry generates a second output state based on a second value of the received one of the N bits. Selectively enabled third switch circuitry generates a conditional third output state.

A built-in self-test (BIST) methodology and apparatus provide for testing and calibration of an integrated circuit oscillator circuit topology that uses a one-pin (a single-pin) external resonator. The method employs dedicated test circuitry, also referred to herein as BIST apparatus, for the pass/fail verification of both the active and passive building blocks of the oscillator. At the same time, the methodology ensures accurate calibration and matching of the capacitors using dedicated digital circuitry and algorithms.

A built-in self-test (BIST) methodology and apparatus provide for testing and calibration of an integrated circuit oscillator circuit topology that uses a one-pin (a single-pin) external resonator. The method employs dedicated test circuitry, also referred to herein as BIST apparatus, for the pass/fail verification of both the active and passive building blocks of the oscillator. At the same time, the methodology ensures accurate calibration and matching of the capacitors using dedicated digital circuitry and algorithms.

A built-in self-test (BIST) methodology and apparatus provide for testing and calibration of an integrated circuit oscillator circuit topology that uses a one-pin (a single-pin) external resonator. The method employs dedicated test circuitry, also referred to herein as BIST apparatus, for the pass/fail verification of both the active and passive building blocks of the oscillator. At the same time, the methodology ensures accurate calibration and matching of the capacitors using dedicated digital circuitry and algorithms.

A built-in self-test (BIST) methodology and apparatus provide for testing and calibration of an integrated circuit oscillator circuit topology that uses a one-pin (a single-pin) external resonator. The method employs dedicated test circuitry, also referred to herein as BIST apparatus, for the pass/fail verification of both the active and passive building blocks of the oscillator. At the same time, the methodology ensures accurate calibration and matching of the capacitors using dedicated digital circuitry and algorithms.

Methods of making a semiconductor device packages may involve placing a metal material at least partially around a region of integrated circuitry embedded within an active surface of a semiconductor die, the metal material located on the active surface. At least a portion of the metal material may be left electrically disconnected from the region of integrated circuitry. The semiconductor die and the metal material may be encapsulated in an encapsulant material, the encapsulant material extending to a height above the active surface higher than a maximum height of the metal material above the active surface.

Methods of making a semiconductor device packages may involve placing a metal material at least partially around a region of integrated circuitry embedded within an active surface of a semiconductor die, the metal material located on the active surface. At least a portion of the metal material may be left electrically disconnected from the region of integrated circuitry. The semiconductor die and the metal material may be encapsulated in an encapsulant material, the encapsulant material extending to a height above the active surface higher than a maximum height of the metal material above the active surface.