A signal detection circuit includes: a voltage dividing circuit having at least a first pair of voltage dividing capacitors connected in series for dividing an input voltage and configured to output a divided voltage, and a detection circuit configured to detect the divided voltage. The first pair of voltage dividing capacitors are included in one semiconductor device. The semiconductor device includes: (i) a semiconductor substrate, (ii) a first conductor layer, (iii) a first dielectric layer, (iv) a second conductor layer, (v) a second dielectric layer, (vi) a third conductor layer, and (vii) a short-circuit portion configured to short-circuit the first conductor layer and the semiconductor substrate.

A nanosecond pulser is disclosed. In some embodiments, the nanosecond pulser may include one or more switch circuits including one or more solid state switches, a transformer, and an output. In some embodiments, the transformer may include a first transformer core, a first primary winding wound at least partially around a portion of the first transformer core, and a secondary winding wound at least partially around a portion of the first transformer core. In some embodiments, each of the one or more switch circuits are coupled with at least a portion of the first primary winding. In some embodiments, the output may be electrically coupled with the secondary winding and outputs electrical pulses having a peak voltage greater than about 1 kilovolt and a rise time of less than 150 nanoseconds or less than 50 nanoseconds.

The present disclosure relates to circuitry for selecting a bias voltage to output at a bias voltage output node of the circuitry. The circuitry comprises a first circuit node configured to receive a first voltage from a first, unregulated, voltage source and a second circuit node configured to receive a second voltage from a second, regulated, voltage source. A switch arrangement configured to selectively couple the bias voltage output node to the first circuit node or the second circuit node is also provided.

Some embodiments may include a nanosecond pulser comprising a plurality of solid state switches; a transformer having a stray inductance, L.sub.s, a stray capacitance, C.sub.s, and a turn ratio n; and a resistor with a resistance, R, in series between the transformer and the switches. In some embodiments, the resonant circuit produces a Q factor according to

[00001]$Q=\frac{1}{R}\sqrt{\frac{L_s}{C_s}},$

and the nanosecond pulser produces an output voltage V.sub.out from an input voltage V.sub.in, according to V.sub.out=QnV.sub.in.

An electronic device includes: at least one connection interface, to receive an external signal. A first signal switching multiplexer is connected to the connection interface. A laptop system is connected to the first signal switching multiplexer, to operate in a laptop mode. A drawing board system is connected to the first signal switching multiplexer, to operate in a drawing board mode and an independent screen mode. A switching switch generates a switching signal and transmits it to the first signal switching multiplexer, the laptop system, and the drawing board system, to select the laptop mode, the drawing board mode, or the independent screen mode.

An RF signal switch circuit that allows connection of any of N radio frequency (RF) input terminals to a switch output port, either in a low loss mode, in a bypass mode, or, optionally, in a signal function mode. Embodiments of the invention allow for both a single switch in the series input path to a target circuit while still having the ability to isolate the bypass path from the target circuit. In the low loss and bypass mode, the circuit simultaneously exhibits low input insertion loss (and thus a low noise factor) and high bypass mode isolation.

Various methods and circuital arrangements for leakage reduction in MOS devices are presented. A pull-up circuit is selectively coupled to a gate of the MOS device to provide control of a voltage to the gate that is larger than a source voltage. Voltage switching circuits selectively couple different voltages to the body and/or back-gate terminals of the MOS device. During a standby mode of operation, the leakage current of the MOS device is decreased by driving the MOS device further into its subthreshold leakage region. During the standby mode, a threshold voltage of the MOS device is increased by coupling a voltage higher than the source voltage to the body and/or back-gate terminals. The MOS device can be a pass device used in low dropout regulator (LDO). During the standby mode, the LDO maintains output regulation by driving the MOS device further into its subthreshold leakage region and/or increasing the threshold voltage.

A semiconductor device that can perform product-sum operation with low power is provided. The semiconductor device includes a switching circuit. The switching circuit includes first to fourth terminals. The switching circuit has a function of selecting one of the third terminal and the fourth terminal as electrical connection destination of the first terminal, and selecting the other of the third terminal and the fourth terminal as electrical connection destination of the second terminal, on the basis of first data. The switching circuit includes a first transistor and a second transistor each having a back gate. The switching circuit has a function of determining a signal-transmission speed between the first terminal and one of the third terminal and the fourth terminal and a signal-transmission speed between the second terminal and the other of the third terminal and the fourth terminal on the basis of potentials of the back gates. The potentials are determined by second data. When signals are input to the first terminal and the second terminal, a time lag between the signals output from the third terminal and the fourth terminal is determined by the first data and the second data.

An adaptive anti-aging sensor based on a cuckoo algorithm, comprising a control module, a reference voltage-controlled oscillator, two shaping circuits, a frequency difference circuit, a resolution adjustment circuit, a 16-bit counter, a parallel-to-serial circuit, an adaptive module, and a digital-to-analog converter. A lookup table is prestored in the adaptive module; when aging monitoring is performed on a voltage-controlled oscillator in an integrated circuit, the adaptive module uses the cuckoo algorithm to determines the optimal working voltage of the currently monitored voltage-controlled oscillator, and the control module accordingly changes the input voltage of the voltage-controlled oscillator of the integrated circuit. The present invention has the advantages that the degree of aging of the integrated circuit is reflected by monitoring the degree of aging of the voltage-controlled oscillator in the integrated circuit, and the optimal working voltage of the voltage-controlled oscillator in the integrated circuit is adaptively adjusted.

Providing electric power distribution for fracturing operations comprising receiving, at a transport, electric power from a mobile source of electricity at a first voltage level and supplying, from the transport, the electric power to a fracturing pump transport at the first voltage level using only a first, single cable connection. The first voltage level falls within a range of 1,000 V to 35 kilovolts. The transport also supplies electric power to a second transport at the first voltage level using only a second, single cable connection.