H03K17/00

Using interrupted through-silicon-vias in integrated circuits adapted for stacking

In an integrated circuit (IC) adapted for use in a stack of interconnected ICs, interrupted through-silicon-vias (TSVs) are provided in addition to uninterrupted TSVs. The interrupted TSVs provide signal paths other than common parallel paths between the ICs of the stack. This permits IC identification schemes and other functionalities to be implemented using TSVs, without requiring angular rotation of alternate ICs of the stack.

DRIVER CIRCUIT FOR INTRINSICALLY SAFE CIRCUITS
20170250598 · 2017-08-31 · ·

There is provided a driver circuit for an electric device of an intrinsically safe circuit. The driver circuit includes a coupling capacitor configured to be open to AC voltage signals and to decouple DC voltage signals, the coupling capacitor includes first and second terminals, and is electrically connected to a first output line of the driver circuit by the first terminal; a first circuit configured to detect an output current of the coupling capacitor, which flows from the first terminal to the first output line; a switchable element electrically connected to the second terminal; means for controlling switching behaviour of the element, configured to switch the element from an electrically blocking state to an electrically conductive state when the output current at the first terminal exceeds a predefined threshold, so that the element in the conductive state causes discharge of of the coupling capacitor via the second terminal.

Automatic commissioning of digital addressable lighting control systems

A lighting system according to various embodiments includes a lighting array having a plurality of luminaires and a plurality of sensors. The lighting system also includes a controller configured to operate in at least one from the group including (i) pre commissioning mode and (ii) a commissioning mode. The pre-commissioning mode matches one of the luminaires with a corresponding one of the sensors to create luminaire-sensor pairs and the commissioning mode determines a location of each of the luminaire-sensor pairs.

MULTIPLE STATE ELECTROSTATICALLY FORMED NANOWIRE TRANSISTORS
20170243983 · 2017-08-24 ·

A transistor (100), including a planar semiconducting substrate (36), a source (42) formed on the substrate, a first drain (102) formed on the substrate, and a second drain (104) formed on the substrate in a location physically separated from the first drain. At least one gate (38, 40) is formed on the substrate and is configured to selectably apply an electrical potential to the substrate in either a first spatial pattern, which causes a first conductive path (62) to be established within the substrate from the source to the first drain, or a second spatial pattern, which causes a second conductive path to be established within the substrate from the source to the second drain.

Digital circuit having correcting circuit and electronic apparatus thereof

Provided is a digital circuit (30) that comprises: a switching circuit (31) having first transistors (32, 33) supplied with power supply potentials (VDD, VSS); correcting circuits (34, 36) connected between an input terminal (IN) inputted with an input signal and control terminals (gates) of the first transistors; capacitors (C2, C3) connected between the control terminals and the input terminal; diode-connected second transistors (35, 37) that are provided between nodes (N5, N6) between the capacitors and the control terminals and the power supply potentials and have the substantially same threshold voltage as the first transistors; and switches (SW2, SW3) connected in series with the second transistors.

Low-leak potential selection circuit
09742401 · 2017-08-22 · ·

First and second p-type transistors are connected in series between an output terminal and a positive power terminal. First and second n-type transistors are connected in series between a node and a negative power terminal. A third p-type transistor is connected between a node and the positive power terminal. Third and fourth n-type transistors are connected in series between the output terminal and a low potential terminal. Fourth and fifth p-type transistors are connected in series between a node and the negative power terminal. A fifth n-type transistor is connected between a node and the negative power terminal. A high potential is outputted without leak current when the first to fifth p-type transistors are turned on and the first to fifth n-type transistors are turned off.

Sample and hold circuit

Aspects of various embodiments of the present disclosure are directed to applications utilizing voltage sampling. In certain embodiments, a sample and hold circuit is configured to sample voltages that exceed a tolerance voltage of components. The circuit includes a first and a second capacitors. In a first mode, a voltage difference between an input node and a first reference voltage is sampled using the first capacitor. Also in the first mode, a voltage stored by the second capacitor is referenced to a second reference voltage and provided to a first output node. In a second mode, a voltage difference between an input node and a first reference voltage is sampled using the second capacitor. Also in the second mode, a voltage stored by the first capacitor is referenced to the second reference voltage and provided to a second output node.

Electrically actuated switch

An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.

Electrically actuated switch

An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.

Load Drive Device and Method of Controlling Fuel Injection Device
20220034275 · 2022-02-03 ·

Provided is a load drive device for controlling a fuel injection device for a vehicle engine and capable of checking an operation of the fuel injection device with high reliability without actually injecting fuel before starting the engine. The load drive device includes: a first switching element that is connected to a high-side of a load; a second switching element that is connected to a low-side of the load; a pre-driver circuit that transmits a drive instruction to the first switching element and the second switching element; and an arithmetic device that transmits a control instruction to the pre-driver circuit, in which a first monitor line and the second monitor line are connected to the arithmetic device, the first monitor line monitoring the drive instruction from the pre-driver circuit to the first switching element before starting an engine, and the second monitor line monitoring the drive instruction from the pre-driver circuit to the second switching element, and the pre-driver circuit has a first control mode in which the first switching element is turned off and the drive instruction is transmitted to the second switching element, and a second control mode in which the second switching element is turned off and the drive instruction is transmitted to the first switching element.