Disclosed is a compound represented by chemical formula (1). In addition, disclosed is an organic electronic element comprising: a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer contains the compound represented by chemical formula (1). Light-emitting efficiency, stability and lifespan may be enhanced when the compound represented by chemical formula (1) is contained in the organic layer.

The invention relates to novel organic semiconducting compounds containing a polycyclic unit, to methods for their preparation and educts or intermediates used therein, to compositions, polymer blends and formulations containing them, to the use of the compounds, compositions and polymer blends as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising these compounds, compositions or polymer blends.

Disclosed is a single-photon source emitting light with controllable circular polarization direction. A pillar structure above a semiconductor substrate includes a semiconductor single-quantum-dot structure. A spin injection layer is arranged above the pillar structure. A pulsed voltage is applied between the spin injection layer and the semiconductor substrate to inject a spin-polarized single-carrier from the spin injection layer into the semiconductor single-quantum-dot structure. In response to the injected single-carrier, a single-quantum-dot emits a single-photon with a circular polarization direction corresponding to the spin direction of the injected single-carrier. The polarization controllable single-photon source allows to use magnetic or electrical means to modulate the circular polarization direction of single-photon. The modulation speed by electrical mean can reach up to GHz range.

A semiconductor sensor device for detecting an analyte including a semiconducting layer, one or more organic molecules in the semiconducting layer, and one or more receptor molecules, comprising a poly-cyanostilbene macrocycle, wherein the one or more receptors is embedded within or onto the semiconducting layer of the semiconductor sensor device. Also disclosed is a method of preparing the semiconductor sensor device including a step of coupling the one or more receptor molecules into or onto the semiconducting layer of the semiconductor sensor device, a dielectric surface, or an electrode surface. Also described is chemical sensing device including the semiconductor sensor device and other elements of a sensing device.

A display device is provided. A first transistor, a second transistor, and a third transistor are disposed above the surface of a substrate. The first transistor includes a first semiconductor and a first gate electrode. The first semiconductor includes a silicon semiconductor. The first gate electrode overlaps the first semiconductor in view of the normal direction of the surface. The second transistor includes a second semiconductor including a first oxide semiconductor. The third transistor includes a third semiconductor and a third gate electrode. The third semiconductor includes a second oxide semiconductor. The third gate electrode overlaps the third semiconductor in view of the normal direction of the surface. A first electrode is disposed above and electrically connected to the third semiconductor. The first electrode overlaps the third gate electrode in a cross-sectional view of the display device.

A photon source comprising:

a quantum dot; and an optical cavity,

the optical cavity comprising: a diffractive Bragg grating “DBG”; and a planar reflection layer,

the DBG comprising a plurality of concentric reflective rings surrounding a central disk and at least one conductive track extending from the central disk across the plurality of concentric rings, the quantum dot being provided within the central disk and the planar reflection layer being provided on one side of the DBG to cause light to be preferentially emitted from the opposing side of the DBG.

Objects of the present invention is to provide an organic semiconductor element having high mobility and to provide a composition for forming an organic semiconductor film with which an organic semiconductor film having high mobility can be formed, a method of manufacturing an organic semiconductor element formed from the composition for forming an organic semiconductor film, and a method of manufacturing an organic semiconductor film.

The organic semiconductor element according to the present invention has a semiconductor active layer including a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less. The composition for forming an organic semiconductor film according to the present invention contains a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less, and a solvent.

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An organic molecular memory of embodiments includes: a first electrode; a second electrode; an organic molecular layer provided between the first electrode and the second electrode, extending in a first direction from the first electrode toward the second electrode, and containing a first molecule and a second molecule provided between the first molecule and the second electrode; and a third electrode facing the second molecule.

An object of the present invention is to provide an organic semiconductor composition, which makes it possible to obtain an organic semiconductor film having high mobility and being excellent in film uniformity and heat resistance, and a method for manufacturing an organic semiconductor element.

The organic semiconductor composition of the present invention contains an organic semiconductor as Component A and an organic solvent, which is represented by Formula B-1 and has a melting point of equal to or lower than 25° C. and a boiling point of equal to or higher than 150° C. and equal to or lower than 280° C., as Component B, in which an ionization potential of Component A is equal to or higher than 5.1 eV. In the formula, X represents O, S, S═O, O═S═O, or NR, Y.sub.1 to Y.sub.4 each independently represent NR.sub.1 or CR.sub.10R.sub.11, R, R.sub.1, R.sub.10, and R.sub.11 each independently represent a hydrogen atom or a substituent, and n represents 1 or 2.

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A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.