An image sensor includes: a photoelectric conversion film that performs photoelectric conversion on light having entered therein; at least two electrodes, including a first electrode and a second electrode, disposed at a surface of the photoelectric conversion film; and at least two electrodes, including a third electrode and a fourth electrode, disposed at another surface of the photoelectric conversion film.

An electronic component such as a voltage controllable reconfigurable capacitor or transistor is formed by printing one or more layers of ink on a non-conductive substrate. Ferroelectric ink or semi-conductive ink is printed and conductive resistive or dielectric ink is printed on a s same or different layers. Reconfigurability is achieved by printing resistive biasing circuitry wherein when a changing voltage is applied to the biasing circuitry, an electronic property of the electronic component changes in response to the changing voltage.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:

##STR00001##

In Chemical Formula 1, each substituent is the same as described in the detailed description.

An organic light emitting diode (OLED) display includes: a substrate including a plurality of organic light emitting elements; an adhesive member on at least a portion of an upper surface of the substrate; a flexible circuit board adhered to the upper surface of the adhesive member and having a portion bent to be mounted to a lower surface of the substrate; and a light blocking member at the upper surface of the substrate, wherein the light blocking member is laterally offset from the adhesive member.

The present invention relates to compounds of the formula (I) where R.sup.1 and R.sup.2 independently of each other, are selected from 1H,1HC.sub.2-C.sub.10-perfluoroalkyl and 1H,1H,2H,2HC.sub.3-C.sub.10-perfluoroalkyl, except for the compound of formula (I), where R.sup.1 and R.sup.2 are both 1H,1H-perfluorobutyl, and to their use, especially as an n-type semiconductor. ##STR00001##

The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.

A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.

A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.

A display device is provided including a first electrodes arranged in a matrix shape above an insulation surface, a bank covering an end part of the first electrode and having an opening part exposing an upper surface of the first electrode, an organic layer covering the opening part and including a light emitting layer, and a second electrode covering the bank and the organic layer, wherein the bank has an upper surface part and an inclined part between the upper surface part and an opening in the bank, and a surface of the inclined part has a plurality of concave and convex parts.

Disclosed are memory cells that include a mixture of an acrylic polyol, an alkylene urea-glyoxal resin, and an acid catalyst, and memory devices that contain a plurality of memory cells.