A display device may include a substrate. A first light emitting element is disposed on the substrate. A second light emitting element is disposed on the substrate and is positioned adjacent to the first light emitting element. A first encapsulation layer is disposed on the first light emitting element and the second light emitting element. A light path control layer is disposed on the first encapsulation layer. The light path control layer includes a first pattern overlapping the first light emitting element and having a first refractive index and a second pattern overlapping the second light emitting element and having a second refractive index that is greater than the first refractive index.

A display device may include a substrate. A first light emitting element is disposed on the substrate. A second light emitting element is disposed on the substrate and is positioned adjacent to the first light emitting element. A first encapsulation layer is disposed on the first light emitting element and the second light emitting element. A light path control layer is disposed on the first encapsulation layer. The light path control layer includes a first pattern overlapping the first light emitting element and having a first refractive index and a second pattern overlapping the second light emitting element and having a second refractive index that is greater than the first refractive index.

An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.

The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.

A display device may include a first transistor, a first electrode, a second electrode, a first intermediate layer, and a first changeable layer. The first electrode is electrically connected to the first transistor. The second electrode overlaps the first electrode. The first intermediate layer is positioned between the first electrode and the second electrode and may emit first light when the first electrode and the second electrode generate a first electric field. The first changeable layer, which overlaps the first electrode, may have a first transmittance value when the first electrode and the second electrode generate the first electric field, and may have a second transmittance value when the first electrode and the second electrode do not generate the first electric field. The second transmittance value is unequal to the first transmittance value.

An organic light emitting diode (OLED) display includes: a substrate including a plurality of organic light emitting elements; an adhesive member on at least a portion of an upper surface of the substrate; a flexible circuit board adhered to the upper surface of the adhesive member and having a portion bent to be mounted to a lower surface of the substrate; and a light blocking member at the upper surface of the substrate, wherein the light blocking member is laterally offset from the adhesive member.

A multispectral imaging device comprises a first photoelectric conversion module and a second photoelectric conversion module. The first photoelectric conversion module further includes a first photoelectric conversion layer located between a first conducting layer and a second conducting layer. The first conducting layer, coupled to a first constant potential, is configured to allow visible light and infrared light to pass through. The first photoelectric conversion layer is configured to convert the visible light into a first electrical signal. The second photoelectric conversion module, formed on a silicon substrate, is configured to receive the infrared light coming from the first photoelectric conversion module. The second photoelectric conversion layer located between a third conducting layer and a fourth conducting layer, wherein the third conducting layer is configured to allow the infrared light passing through, the second photoelectric conversion layer is configured to convert the infrared light into a second electrical signal.

A ratiometric vapor sensor is described that includes a first sensor and a second sensor. The first sensor includes a first semiconductor component comprising a vapor-sensitive semiconducting organic compound, while the second sensor includes a second semiconductor component comprising a modified vapor-sensitive semiconducting organic compound including a modifying organic group. The ratiometric vapor sensor can be used to detect the presence of a vapor such as nitrogen dioxide, and determine the concentration of the vapor by comparing the outputs of electrodes connected to the first and second sensor.

A novel semiconductor device is provided. The semiconductor device includes a programmable logic device including a programmable logic element, a control circuit, and a detection circuit. The programmable logic device includes a plurality of contexts. The control circuit is configured to control selection of the contexts. The detection circuit is configured to output a signal corresponding to the amount of radiation. The control circuit is configured to switch between a first mode and a second mode in accordance with the signal corresponding to the amount of radiation. The first mode is a mode in which the programmable logic device performs processing by a multi-context method, and the second mode is a mode in which the programmable logic device performs processing using a majority signal of signals output from the logic element multiplexed by the plurality of contexts.

The present application discloses a conductive laminated structure, a manufacturing method thereof, and a display panel. The conductive laminated structure provided by the present application comprises a substrate; an adhesion enhancement layer disposed on the substrate; a metal nanowire layer disposed on the adhesion enhancement layer and having a first opening to expose the adhesion enhancement layer; a wiring layer disposed on the metal nanowire layer and having a second opening at least partially overlapping the first opening to expose the adhesion enhancement layer; and an optical adhesive layer disposed on the wiring layer, filled in the second opening and the first opening and connected to the adhesion enhancement layer. Because the metal nanowire layer is in direct contact with the wiring layer, the conducting capability is enhanced, and a reduced contacting area is needed, so that the wiring layer can be relatively narrow.