A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.

The present invention provides an array substrate, a method for manufacturing the array substrate, and a display panel. The array substrate includes a driving transistor, and the driving transistor includes: a gate electrode; an active layer arranged opposite to a position of the gate electrode, the active layer includes a first semiconductor and second semiconductors, the second semiconductors are in contact with the first semiconductor to form a first PN junction and a second PN junction respectively, and the first PN junction corresponds to the source electrode; and a source drain layer, including a source electrode and a drain electrode. The second semiconductors are electrically connected with the source electrode and drain electrode, respectively.

An antenna array is provided including a substrate, a metal ground plane proximate the substrate, and a dielectric layer proximate the metal ground plane. A first plurality of antenna elements including polaronic organic transducer elements is proximate the dielectric layer and connected in series. A second plurality of antenna elements including polaronic organic transducer elements is proximate the dielectric layer and also connected in series. The first and second plurality of antenna elements are electrically isolated. The antenna elements of the first plurality of antenna elements are configured to detect a first wavelength, while the antenna elements of the second plurality of antenna elements are configured to detect a second wavelength, different from the first wavelength.

A novel semiconductor device is provided. The semiconductor device includes a programmable logic device including a programmable logic element, a control circuit, and a detection circuit. The programmable logic device includes a plurality of contexts. The control circuit is configured to control selection of the contexts. The detection circuit is configured to output a signal corresponding to the amount of radiation. The control circuit is configured to switch between a first mode and a second mode in accordance with the signal corresponding to the amount of radiation. The first mode is a mode in which the programmable logic device performs processing by a multi-context method, and the second mode is a mode in which the programmable logic device performs processing using a majority signal of signals output from the logic element multiplexed by the plurality of contexts.

A semiconductor device having a novel structure is provided. Fluctuation in the grayscale voltage due to an offset voltage is suppressed. When a current corresponding to a lower-bit grayscale voltage is generated in a transconductance amplifier, voltages V.sub.HI and V.sub.LO supplied to the transconductance amplifier are alternately input to two input terminals in accordance with a digital signal of the most significant bit of lower bits. Since a change corresponding to the offset voltage is added to both the maximum and minimum values of the current output from the transconductance amplifier, fluctuation in the grayscale voltage due to the offset voltage can be suppressed.

A solid-state imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode, and the first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween.

The present invention relates to a new amorphous material with advantageous properties as charge transport material and/or absorber material for various applications, in particular in photoelectric conversion devices, i.e. an amorphous material of the composition (R.sup.1NR.sup.2.sub.3).sub.5Me X.sup.1.sub.aX.sup.2.sub.b wherein R.sup.1 is C.sub.1-C.sub.4-alkyl, R.sup.2 are independently of one another hydrogen or C.sub.1-C.sub.4-alkyl, Me is a divalent metal, X.sup.1 and X.sup.2 have different meanings and are independently of one another selected from F, CI, Br, I or a pseudohalide, a and b are independently of one another 0 to 7, wherein the sum of a and b is 7.

An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.

A pixel circuit, a drive method, a display panel and a display device are provided. A switch transistor is arranged between a first power supply signal and an input terminal (a source) of a drive transistor. When a drive circuit is at a second detection period during which drive current of a light emitting element is detected, the switch transistor is controlled to be turned off, such that the first power supply signal is disconnected from the source of the drive transistor. In this case, no current flows through the light emitting element, and therefore the light emitting element does not emit light, thereby solving a problem in the conventional technology that the light emitting element is lighted and it is not dark in a dark state when drive current of the pixel circuit is detected.

A variable transmission display comprises an electrophoretic medium having electrically charged particles dispersed in a fluid, the electrophoretic medium being capable of assuming a light-transmissive state and a substantially non-light-transmissive state; a light-transmissive first electrode disposed adjacent one side of the electrophoretic medium; light-transmissive second electrodes disposed adjacent the other side of the electrophoretic medium; and voltage means for varying the potential each of the second electrodes independently of one another.