The present invention relates to the compounds of the formulae (1) and (2) and to organic electroluminescent devices, in particular blue-emitting devices, in which these compounds are used as host material or dopant in the emitting layer and/or as hole-transport material and/or as electron-transport material. ##STR00001##

A photoelectric conversion element including a first electrode and a second electrode that are disposed to face each other and a photoelectric conversion layer that is provided between the first electrode and the second electrode. The photoelectric conversion layer contains at least a subphthalocyanine or a subphthalocyanine derivative, and a carrier dopant, in which the carrier dopant has a concentration of less than 1% by volume ratio to the subphthalocyanine or the subphthalocyanine derivative.

The invention relates to novel organic semiconducting compounds containing a polycyclic unit, to methods for their preparation and educts or intermediates used therein, to compositions, polymer blends and formulations containing them, to the use of the compounds, compositions and polymer blends as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising these compounds, compositions or polymer blends.

The present invention provides the compound represented by Formula 1, an organic electric element comprising a first electrode, a second electrode, and an organic material layer formed between the first electrode and the second electrode, and electronic device thereof, and by comprising the compound represented by Formula 1 in the organic material layer, the driving voltage of the organic electronic device can be lowered, and the luminous efficiency and life time of the organic electronic device can be improved.

An imaging device including a semiconductor substrate having a pixel region where pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode that is located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; and a first layer that covers the photoelectric conversion layer, the first layer being located above the pixel region and the peripheral region. The thickness of the first layer above the peripheral region is larger than a thickness of the first layer above the pixel region, and a level of an uppermost surface of the first layer above the peripheral region is higher than a level of an uppermost surface of the first layer above the pixel region.

Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

There are provided a photodetection element including a first electrode layer 11, a second electrode layer 12, a photoelectric conversion layer 13 provided between the first electrode layer 11 and the second electrode layer 12, an electron transport layer 21 provided between the first electrode layer 11 and the photoelectric conversion layer 13, and a hole transport layer 22 provided between the photoelectric conversion layer 13 and the second electrode layer 12, in which the photoelectric conversion layer 13 contains quantum dots of a compound semiconductor containing an Ag element and a Bi element, and the hole transport layer 22 contains an organic semiconductor A including a predetermined structure, and are provided an image sensor.

A polymer comprising ##STR00001##
wherein Ar.sub.1 and Ar.sub.2 are optional and either the same or different and independently selected from an aryl group or an heteroaryl group. In this polymer, W is selected from the group consisting of: S, Se, O, and N-Q; and Q is selected from the group consisting of: a straight-chain or branched carbyl, silyl, or hydrocarbyl, a branched or cyclic alkyl with 1 to 30 atoms, a fused substituted aromatic ring, and a fused unsubstituted aromatic ring. Additionally, in the polymer, R.sub.1 is selected from the group consisting of: a straight-chain or branched carbyl, silyl, or hydrocarbyl, a branched or cyclic alkyl with 1 to 30 atoms, a fused substituted aromatic ring, and a fused unsubstituted aromatic ring and wherein x+y=1.

A photovoltaic device and method utilizing a light harvesting device and a photovoltaic cell; wherein the light harvesting device includes an organic semiconductor photoactive layer capable of multiple exciton generation with a luminescent material dispersed therein; wherein the bandgap of the luminescent material is selected such that the triplet excitons, formed as a result from the multiple exciton generation in the organic semiconductor, can be transferred from the organic semiconductor into the luminescent material non-radiatively via Dexter Energy Transfer; a photovoltaic cell disposed in an emissive light path of the luminescent material and having a first photoactive layer, wherein the bandgap of the luminescent material matches or is higher than the bandgap of the first photoactive layer.

The present disclosure relates to a method that includes treating a liquid that includes a first precursor at a concentration C.sub.1, a second precursor at a concentration C.sub.2, a third precursor at a concentration C.sub.3, and an additive at a concentration C.sub.4, where the treating results in a perovskite, each of C.sub.1, C.sub.2, and C.sub.3 are between 0.001 M and 100 M, inclusively, and at least one of C.sub.4/C.sub.1 or C.sub.4/C.sub.2 equals a ratio greater than or equal to zero