A photoelectric conversion element includes a photoelectric conversion layer, a first electrode that collects holes generated in the photoelectric conversion layer, and a second electrode that is positioned opposite to the first electrode with the photoelectric conversion layer being disposed therebetween and that collects electrons generated in the photoelectric conversion layer. The photoelectric conversion layer includes a first quantum dot layer including first quantum dots each having a surface modified with a first ligand and includes a second quantum dot layer including second quantum dots each having a surface modified with a second ligand different from the first ligand. The second quantum dot layer has an ionization potential greater than an ionization potential of the first quantum dot layer. A second value that represents a particle diameter distribution of the second quantum dots is less than a first value that represents a particle diameter distribution of the first quantum dots.

An optical sensor includes: a lower substrate; a plurality of lower electrodes on the lower substrate; an organic photoelectric conversion layer that is provided in common on the plurality of lower electrodes and includes a hole transport layer, an active layer, and an electron transport layer in this order from the lower substrate side; a conductive adhesive that is provided between each of the plurality of lower electrodes and the organic photoelectric conversion layer and electrically connects each of the plurality of lower electrodes to the organic photoelectric conversion layer; a light-transmitting upper electrode provided on the organic photoelectric conversion layer; and a light-transmitting upper substrate provided on the upper electrode.

An image-sensing display device and an image processing method are provided. The image-sensing display device includes a substrate, banks, and sensor units. The banks and the sensor units are located on the substrate. Each of the sensor units includes first to fourth light-emitting devices and a photo sensor. The first to fourth light-emitting devices are located around a corresponding bank. The first to third light-emitting devices include a red light-emitting device, a green light-emitting device, and a blue light-emitting device. The first and fourth light-emitting devices are light-emitting devices of a same color. The photo sensor is located on the corresponding bank. The photo sensor includes a first electrode, a second electrode, and a sensing layer located between the first electrode and the second electrode. The first electrode and the second electrode respectively extend from the sensing layer along a first direction and a second direction.

The present invention relates to a solar cell, including a perovskite solar cell including a light absorption layer including a perovskite compound and a conductive charge transporting layer included in at least one surface of one surface and the other surface of the light absorption layer, wherein the one surface of the light absorption layer is disposed closer to an incident surface for sunlight than the other surface of the light absorption layer, an optical band gap of an inner portion of the light absorption layer is constant or decreases toward the other surface from the one surface, and an optical band gap of the one surface of the light absorption layer is greater than an optical band gap of the other surface of the light absorption layer, and a method of manufacturing the solar cell.

A photoelectric conversion element according to an embodiment of the present disclosure include a first electrode, a second electrode opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and formed using a plurality of materials having average particle diameters different from each other, the plurality of materials including at least fullerene or a derivative thereof, and a particle diameter ratio, of a first material having a smallest average particle diameter among the plurality of materials with respect to a second material having a largest average particle diameter among the plurality of materials, is 0.6 or less.

Disclosed is a bio sensing device including a medium layer, a light emitting element and an optical sensor. The light emitting element is configured to emit a light toward a user's skin layer, in which the light passes through the medium layer and has a maximum intensity in a first wavelength. The optical sensor is configured to receive a reflected part of the light from the user's skin layer, in which the reflected part of the light passes through the medium layer, and the medium layer has a first transmittance greater than 60% with respect to the first wavelength.

An optical device with favorable characteristics is provided. An optical device with low driving voltage is provided. An optical device with low power consumption is provided. The optical device includes a first electrode, a second electrode, an active layer, and a carrier-transport layer. The active layer is positioned between the first electrode and the second electrode. The active layer contains a first organic compound and a second organic compound, the first organic compound is represented by General Formula (G1), and the second organic compound is represented by General Formula (G2-1). The carrier-transport layer is positioned between the second electrode and the active layer and the thickness of the carrier-transport layer is greater than or equal to 10 nm and less than or equal to 300 nm.

Solar cell modules and methods of fabrication are described. In an embodiment, a pair of tandem solar cells are bonded together along a contact ledge of a first tandem solar cell using a solid electrically conductive bonding material.

The present invention discloses an X-ray beam intensity monitoring device and an X-ray inspection system. The X-ray beam intensity monitoring device comprises an intensity detecting module and a data processing module, wherein the intensity detecting module is adopted to be irradiated by the X-ray beam and send a detecting signal, the data processing module is coupled with the intensity detecting module to receive the detecting signal and output an X-ray beam intensity monitoring signal, wherein the X-ray beam intensity monitoring signal includes a dose monitoring signal for the X-ray beam and a brightness correction signal for correcting signal values of the X-ray beam. The X-ray beam intensity monitoring device can simultaneously perform dose monitoring and brightness monitoring, thereby improving the service efficiency of the X-ray beam intensity monitoring device. Moreover, the monitoring result of the X-ray beam intensity can be more accurate and reliable.

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and anupper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.