Provided is a photoelectric conversion element including: a first electrode having opaqueness to light and formed of a metal; a hole blocking layer provided on the first electrode; an electron transport layer provided on the hole blocking layer; a hole transport layer provided on the electron transport layer; and a second electrode provided on the hole transport layer and having transmissivity to light, wherein the hole blocking layer contains an oxide of the metal in the first electrode.

An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.

The present disclosure provides a photoelectric conversion element including a lower electrode, a photoelectric conversion layer, and an upper electrode in this order, wherein the photoelectric conversion layer includes a first organic compound and a second organic compound having a lower reduction potential than that of the first organic compound, the first organic compound has an emission lifetime of 1.1 ns or more in chloroform solution, and the first organic compound is an organic compound represented by Formula [1] according to claim 1, a fluoranthene derivative, or a metal complex.

A photoelectric conversion element including an anode, a cathode, and a photoelectric conversion layer, wherein the photoelectric conversion layer contains a first organic compound and a second organic compound, and difference between oxidation potential of first organic compound and reduction potential of second organic compound is larger than 1.5 [V], and the first organic compound is any one of general formulae [1] below, a fluoranthene derivative, and a metal complex,

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R.sub.1 represents a hydrogen atom or a substituent, Ar.sub.1, Ar.sub.2, and Z.sub.1 represents a substituent, n.sub.1 and n.sub.2 represents an integer of 0 to 4, and X.sub.1 to X.sub.3 represents a nitrogen atom, a sulfur atom, an oxygen atom, or a carbon atom.

A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.

A solid-state imaging element includes a first photoelectric conversion unit and a second photoelectric conversion unit. The first and second photoelectric conversion units are joined at joint surfaces facing each other, and include an upper electrode, a lower electrode, a photoelectric conversion film, and a storage electrode. The lower electrode of the first photoelectric conversion unit is connected to a charge storage unit via a first through electrode penetrating a semiconductor substrate. The lower electrode of the second photoelectric conversion unit is connected to the charge storage unit via: a second electrode provided on a joint surface of the second photoelectric conversion unit; a first electrode provided on a joint surface of the first photoelectric conversion unit; a second through electrode penetrating the first photoelectric conversion unit; and the first through electrode.

Provided is a photoelectric conversion element including: a first electrode having opaqueness to light and formed of a metal; a hole blocking layer provided on the first electrode; an electron transport layer provided on the hole blocking layer; a hole transport layer provided on the electron transport layer; and a second electrode provided on the hole transport layer and having transmissivity to light, wherein the hole blocking layer contains an oxide of the metal in the first electrode.

A photoelectric conversion element according to an embodiment of the present disclosure includes a first electrode and a second electrode opposed to each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material and a second semiconductor material that have mutually different mother skeletons, in which the first organic semiconductor material is fullerene or a fullerene derivative, and the second organic semiconductor material has a deeper HOMO level than the first organic semiconductor material.

A light conversion package for a semiconductor light source includes a light conversion block, a substrate, and an interconnector. The light conversion block is positioned to receive incident light from the semiconductor light source and acts to convert the incident light to light having a different spectral distribution. The interconnector attaches the light conversion block to the substrate and limits a thermal resistance between the light conversion block and the substrate so that the substrate can efficiently sink heat from the light conversion block. The interconnector and the substrate together may still provide high reflectivity.

The embodiments of the present disclosure provides a display panel and a display device. The display panel includes a display layer, and a solar cell disposed on the side of light emitting of the display layer and located on at least the part of display region of the display layer; the solar cell is used to supply power for the display layer; the solar cell comprises a first electrode and a second electrode which are transparent, and a photoelectric conversion layer disposed between the first electrode and the second electrode, the photoelectric conversion layer is configured to transmit at least a part of visible light, and to convert the absorbed light into electrical energy.