An object of the invention is to provide a photoelectric conversion element exhibiting an excellent production suitability. Also, the other object of the invention is to provide an optical sensor and an imaging element comprising the photoelectric conversion element. The photoelectric conversion element of the invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) below. ##STR00001##

A display device including: a display layer including a light emitting device, a photo-detector, and a dummy device; and a circuit layer including a pixel driving part, which is connected to the light emitting device, and a sensor driving part which is connected to the photo-detector, wherein the light emitting device and the dummy device are overlapped with the pixel driving part, and wherein the photo-detector is overlapped with the sensor driving part.

An imaging device includes a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked. A semiconductor material layer including an inorganic oxide semiconductor material having an amorphous structure at least in a portion is formed between the first electrode and the photoelectric conversion layer, and the formation energy of an inorganic oxide semiconductor material that has the same composition as the inorganic oxide semiconductor material having an amorphous structure and has a crystalline structure has a positive value.

To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

An electromagnetic wave detector 100 comprises: a substrate 5 having a front surface and a back surface; an insulating layer 4 formed of a rare earth oxide, which is provided on the front surface of the substrate 5; a pair of electrodes 2 provided on the insulating layer 4 so as to be arranged to face each other across a gap; and a two-dimensional material layer 1 provided on the insulating layer 4 so as to be electrically connected to the pair of electrodes 2. The rare earth oxide contains a base material made of an oxide of a first rare earth element, and a second rare earth element different from the first rare earth element, which is activated in the base material.

To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

An integrated circuit including a first circuit module and a second circuit module is provided. A layer stack may include one or multiple metal layers with a power segment and a ground segment connected to the first circuit module and the second circuit module, which form a resonant current loop. A pickup loop may be inductively coupled to the resonant current loop to dampen its resonance, thereby making the IC compliant with its EMC requirements or removing functional errors such as problems in the signal or power integrity.

An integrated circuit including a first circuit module and a second circuit module is provided. A layer stack may include one or multiple metal layers with a power segment and a ground segment connected to the first circuit module and the second circuit module, which form a resonant current loop. A pickup loop may be inductively coupled to the resonant current loop to dampen its resonance, thereby making the IC compliant with its EMC requirements or removing functional errors such as problems in the signal or power integrity.

An imaging element includes a photoelectric conversion section that includes a first electrode, a photoelectric conversion layer, and a second electrode stacked on one another. An inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer. The inorganic oxide semiconductor material layer includes indium (In) atoms, gallium (Ga) atoms, tin (Sn) atoms, and zinc (Zn) atoms.